UTC MCR100 SCR
UTC UNISONIC TECHNOLOGIES CO., LTD. 2
QW-R301-002,B
PARAMETER SYMBOL MAX UNIT
Forward Peak Gate Power (TA=25°C, Pulse Width ≤1.0µs) PGM 0.1 W
Forward Average Gate Power (TA=25°C, t=8.3ms) PG(AV) 0.1 W
Peak Gate Current – Forward (TA=25°C, Pulse Width≤1.0µs) IGM 1 A
Peak Gate Voltage – Reverse (TA=25°C, Pulse Width≤1.0µs) VGRM 5 V
Operating Junction Temperature Range @ Rated VRRM and VDRM TJ -40 to +110 °C
Storage Temperature Range Tstg -40 to +150 °C
Note: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate
voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode.
Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the
devices are exceeded.
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise stated)
PARAMETER TEST CONDITION SYMBOL MIN TYP MAX UNIT
OFF CHARACTERISTICS
Peak Forward or Reverse Blocking
Current Tc=25°C
Tc=125°C
VD=Rated VDRM and VRRM; RGK=1kΩ
IDRM, IRRM
10
100
µA
ON CHARACTERISTICS
Peak Forward On-State Voltage
(Note1)
ITM=1A Peak @ TA=25°C VTM 1.7
V
Gate Trigger Current (Continuous
dc)(note2)
VAK=7Vdc, RL=100Ω, TC=25°C IGT 40 200
µA
Holding Current (note 3) Tc=25 °C
Tc=-40 °C
VAK=7Vdc, initiating current=20mA IH 0.5 5
10 mA
Latch Current Tc=25 °C
Tc=-40 °C
VAK=7V, Ig=200µA IL 0.6 10
15 mA
Gate Trigger Current
(continuous dc) (Note 2) Tc=25 °C
Tc=-40 °C
VAK=7Vdc, RL=100Ω
VGT
0.62
0.8
1.2
V
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off-State
Voltage
VD=Rated VDRM, Exponential
Waveform, RGK=1000Ω, TJ=110°C dV/dt 20 35 V/µs
Critical Rate of Rise of On-State
Current
IPK=20A; Pw=10µsec;
diG/dt=1A/µsec, Igt=20mA di/dt 50 A/µs
Notes: 1. Indicates Pulse Test Width≤1.0ms, duty cycle ≤1%
2. R
GK=1000Ω included in measurement.
3. Does not include RGK in measurement.