PD- 93818A IRGP30B120KD-E Motor Control Co-Pack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 1200V * Low VCE(on) Non Punch Through (NPT) Technology * Low Diode VF (1.76V Typical @ 25A & 25C) * 10 s Short Circuit Capability * Square RBSOA * Ultrasoft Diode Recovery Characteristics * Positive VCE(on) Temperature Coefficient * Extended Lead TO-247AD Package VCE(on) typ. = 2.28V G VGE = 15V, IC = 25A, 25C E N-channel Benefits * Benchmark Efficiency for Motor Control Applications * Rugged Transient Performance * Low EMI * Significantly Less Snubber Required * Excellent Current Sharing in Parallel Operation * Longer leads for Easier Mounting TO-247AD Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 100C IFM VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current (Fig.1) Continuous Collector Current (Fig.1) Pulsed Collector Current (Fig.3, Fig. CT.5) Clamped Inductive Load Current(Fig.4, Fig. CT.2) Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation (Fig.2) Maximum Power Dissipation (Fig.2) Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw. Max. Units 1200 60 30 120 120 30 120 20 300 120 -55 to + 150 V A V W C 300, (0.063 in. (1.6mm) from case) 10 lbf*in (1.1N*m) Thermal Resistance Parameter RJC RJC RCS RJA Wt ZJC www.irf.com Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Transient Thermal Impedance Junction-to-Case Min. Typ. Max. --- --- --- --- --- --- --- 0.24 --- 6 (0.21) 0.42 0.83 --- 40 --- Units C/W g (oz) (Fig.24) 1 9/17/07 IRGP30B120KD-E Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V(BR)CES Collector-to-Emitter Breakdown Voltage Min. 1200 V(BR)CES / Tj Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation VCE(on) Voltage VGE(th) Gate Threshold Voltage VGE(th) / Tj Temperature Coeff. of Threshold Voltage gfe Forward Transconductance ICES Zero Gate Voltage Collector Current VFM IGES 4.0 14.8 Typ. +1.2 2.28 2.46 3.43 2.74 2.98 5.0 - 1.2 16.9 325 1.76 1.86 1.87 2.01 Diode Forward Voltage Drop Gate-to-Emitter Leakage Current Max. Units V V/C 2.48 2.66 4.00 V 3.10 3.35 6.0 V Conditions Fig. VGE = 0V,Ic =250 A VGE = 0V, Ic = 1 mA ( 25 -125 oC ) IC = 25A, VGE = 15V 5, 6 IC = 30A, VGE = 15V 7, 9 IC = 60A, VGE = 15V 10 IC = 25A, VGE = 15V, TJ = 125C 11 IC = 30A, VGE = 15V, TJ = 125C VCE = VGE, IC = 250 A 9 ,1 0 ,1 1 ,1 2 o o mV/ C VCE = VGE, IC = 1 mA ( 25 -125 C ) 19.0 250 675 2000 2.06 2.17 2.18 2.40 100 S VCE = 50V, IC = 25A, PW=80s VGE = 0V,VCE = 1200V A VGE = 0v, VCE = 1200V, TJ =125C VGE = 0v, VCE = 1200V, TJ =150C IC = 25A V IC = 30A 8 IC = 25A, TJ = 125C IC = 30A, TJ = 125C nA VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Parameter Qgc Gate - Collector Charge (turn-on) Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss Typ. 169 19 82 1066 1493 Etot Total Switching Loss 2559 3050 Eon Turn-on Switching Loss Eoff Turn-off Switching Loss 1660 2118 1856 2580 Qg Total Gate charge (turn-on) Qge Gate - Emitter Charge (turn-on) Min. Max. Units Conditions IC = 25A 254 29 nC VCC =600V VGE = 15V 123 IC = 25A, VCC = 600V 1250 1800 J VGE = 15V, Rg = 5, L =200H Etot Total Switching Loss 3778 4436 td(on) Turn - on delay time tr Rise time td(off) Turn - off delay time tf Fall time 65 35 230 75 Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance 50 25 210 60 2200 210 85 Reverse bias safe operating area 23 CT 1 CT 4 WF1 o TJ = 25 C, Energy losses include tail and diode reverse recovery Ic =25A, VCC=600V J WF2 13, 15 VGE = 15V, Rg = 5, L =200H CT 4 o TJ = 125 C, Energy losses include tail and diode reverse recovery Ic =25A, VCC=600V ns WF1 & 2 14, 16 VGE = 15V, Rg = 5, L =200H o TJ = 125 C, CT 4 WF1 WF2 VGE = 0V pF VCC = 30V 22 f = 1.0 MHz o RBSOA Fig. TJ =150 C, Ic = 120A VCC = 1000V, VP = 1200V FULL SQUARE 4 CT 2 Rg = 5, VGE = +15V to 0 V SCSOA Short Circuit Safe Operating Area Erec Reverse recovery energy of the diode trr Diode Reverse recovery time Irr Peak Reverse Recovery Current Le Internal Emitter Inductance 10 ---- ---- s 1820 300 34 13 2400 J ns A nH TJ = 150oC VCC = 900V,VP = 1200V CT 3 WF4 Rg = 5, VGE = +15V to 0 V 2 38 o TJ = 125 C VCC = 600V, Ic = 25A 1 7 ,1 8 ,1 9 VGE = 15V, Rg = 5, L =200H CT 4 , WF3 20, 21 Measured 5 mm from the package. www.irf.com IRGP30B120KD-E Fig.1 - Maximum DC Collector Current vs. Case Temperature Fig.2 - Power Dissipation vs. Case Temperature 70 320 60 280 240 50 (W) tot 30 P I C (A) 200 40 20 160 120 80 10 40 0 0 0 40 80 120 160 0 40 120 160 T C (C) T C (C) Fig.3 - Forward SOA T C =25C; Tj < 150C 1000 80 Fig.4 - Reverse Bias SOA Tj = 150C, V GE = 15V 1000 PULSED 2 s 100 10s 100 (A) 10 I 1ms I C C (A) 100s 10 1 10ms DC 0.1 1 1 www.irf.com 10 100 V CE (V) 1000 10000 1 10 100 V CE (V) 1000 10000 3 IRGP30B120KD-E Fig.6 - Typical IGBT Output Characteristics Tj=25C; tp=300s Fig.5 - Typical IGBT Output Characteristics Tj= -40C; tp=300s 60 55 V GE = 12V V GE = 15V 50 V GE = 10V V GE = 12V 45 V GE = 10V 40 40 V GE = 8V 35 35 45 (A) V GE = 8V 30 C 30 C 25 I I V GE = 18V 55 V GE = 15V 50 (A) 60 V GE = 18V 25 20 20 15 15 10 10 5 5 0 0 0 1 2 3 4 V CE (V) 5 0 6 Fig.7 - Typical IGBT Output Characteristics Tj=125C; tp=300s 60 V GE = 18V 45 40 V GE = 10V 45 V GE = 8V 40 (A) 35 30 6 35 30 25 20 20 15 15 10 10 5 5 0 0 0 4 5 F 25 I I C (A) 50 V GE = 12V 3 4 V CE (V) - 40C 25C 125C 55 V GE = 15V 50 2 Fig.8 - Typical Diode Forward Characteristic tp=300s 60 55 1 1 2 3 V CE (V) 4 5 6 0 1 2 V F (V) 3 4 www.irf.com IRGP30B120KD-E Fig.10 - Typical V CE vs V GE Tj= 25C 20 20 18 18 16 16 14 14 12 12 10 V CE ( V ) V CE (V) Fig.9 - Typical V CE vs V GE Tj= -40C I CE =10A I CE =25A I CE =50A 8 10 I CE =10A I CE =25A I CE =50A 8 6 6 4 4 2 2 0 0 6 8 10 12 14 V GE (V) 16 18 20 6 18 225 16 200 14 175 12 150 4 50 2 25 0 0 www.irf.com 16 18 Tj=25C Tj=125C C 75 12 14 V GE (V) 20 100 6 10 18 125 I CE =10A I CE =25A I CE =50A 8 16 (A) 250 6 12 14 V GE (V) I V CE ( V ) 20 8 10 Fig.12 - Typ. Transfer Characteristics V CE =20V; tp=20s Fig.11 - Typical V CE vs V GE Tj= 125C 10 8 20 Tj=125C Tj=25C 0 4 8 12 V GE (V) 16 20 5 IRGP30B120KD-E Fig.13 - Typical Energy Loss vs Ic Tj=125C; L=200H; V CE =600V; Rg=22 ; V GE =15V Fig.14 - Typical Switching Time vs Ic Tj=125C; L=200H; V CE =600V; Rg=22 ;V GE =15V 8000 1000 Eon 7000 tdoff Eoff 5000 tf t (nS) Energy (J) 6000 4000 tr 100 3000 tdon 2000 1000 0 10 0 10 20 30 I C (A) 40 50 0 60 10 20 30 I C (A) 40 50 60 Fig.16 - Typical Switching Time vs Rg Tj=125C; L=200H; V CE =600V; I CE =25A; V GE =15V Fig.15 - Typical Energy Loss vs Rg Tj=125C; L=200H; V CE =600V; I CE =25A; V GE =15V 1000 3500 Eon 3300 tdoff 3100 2700 Eoff 2500 t (nS) Energy (uJ) 2900 tdon 100 2300 tr tf 2100 1900 1700 1500 10 0 6 5 10 15 20 25 30 35 40 45 50 55 Rg (ohms) 0 5 10 15 20 25 30 35 40 45 50 55 Rg (ohms) www.irf.com IRGP30B120KD-E Fig.17 - Typical Diode I RR vs I F Tj=125C 45 40 40 35 35 Rg=5 25 30 I RR ( A ) 30 IRR ( A ) 45 Rg=10 20 Rg=22 25 20 15 15 Rg=51 10 Fig.18 - Typical Diode I RR vs Rg Tj=125C; I F =25A 10 5 5 0 0 0 10 20 30 I F (A) 40 50 0 60 5 Fig.19 - Typical Diode I RR vs dI F /dt Rg (ohms) Fig.20 - Typical Diode Q RR V CC =600V; V GE =15V V CC =600V; V GE =15V; Tj=125C I F =25A; Tj=125C 45 10 15 20 25 30 35 40 45 50 55 7000 40 6500 Rg=5 35 22 51 6000 30 10 40A 30A QRR ( n C ) (A) 5500 25 5000 RR Rg=10 Rg=22 15 10 3500 5 3000 0 2500 www.irf.com 500 1000 dI F / dt (A/s) 20A 4000 Rg=51 0 25A 4500 I 20 5 50A 1500 0 500 1000 1500 dI F / dt (A/s) 7 IRGP30B120KD-E Fig.21 - Typ. Diode E rec vs. I F Tj=125C 2400 5 2200 10 22 Energy (uJ) 2000 51 1800 1600 1400 1200 1000 800 0 10 20 30 I F (A) 40 50 60 Fig.23 - Typ. Gate Charge vs. V GE I C =25A; L=600H Fig.22 - Typical Capacitance vs V CE V GE =0V; f=1MHz 16 10000 600V 14 C ies 800V 1000 10 V GE ( V ) CapacItance (pF) 12 C oes 6 100 4 C res 2 0 10 0 20 40 60 V CE (V) 8 8 80 100 0 40 80 120 160 200 Q G , Total Gate Charge (nC) www.irf.com IRGP30B120KD-E Fig.24 - Normalized Transient Thermal Impedance, Junction-to-Case 10 1 D =0.5 0.2 0.1 0.1 0.05 P DM 0.02 0.01 t1 0.01 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + T C SINGLE PULSE 0.001 0.00001 0.00010 0.00100 0.01000 0.10000 1.00000 10.00000 t 1 , Rectangular Pulse Duration (sec) www.irf.com 9 IRGP30B120KD-E Fig. CT.1 - Gate Charge Circuit (turn-off) Fig. CT.2 - RBSOA Circuit L L VCC DUT 0 80 V DUT 1000V Rg 1K Fig. CT.4 - Switching Loss Circuit Fig. CT.3 - S.C. SOA Circuit diode clamp / DUT Driver D C 900V L - 5V DUT / DRIVER DUT VCC Rg Fig. CT.5 - Resistive Load Circuit R= DUT VCC ICM VCC Rg 10 www.irf.com IRGP30B120KD-E Fig. WF.1 - Typ. Turn-off Loss Waveform @ Tj=125C using Fig. CT.4 Fig. WF.2 - Typ. Turn-on Loss Waveform @ Tj=125C using Fig. CT.4 800 40 900 45 700 35 800 40 600 30 700 35 TEST CURRENT 90% ICE 500 25 400 20 600 30 300 15 25 90% test current ICE ( A ) tf V CE ( V ) I CE ( A ) V CE ( V ) 500 400 20 tr 300 200 15 10% test current 10 200 5% VCE 100 5 5% ICE 0 0 10 5% VCE 100 5 0 0 Eon Loss Eoff Loss -100 -0.5 -5 0.0 0.5 1.0 1.5 2.0 2.5 -100 -5 4.0 4.1 4.2 t I me (s) 4.3 4.4 4.5 t I me (s) Fig. WF.4 - Typ. S.C. Waveform @ TC=150C using Fig. CT.3 Fig. WF.3 - Typ. Diode Recovery Waveform @ Tj=125C using Fig. CT.4 0 -200 30 1200 20 1000 10 800 QRR 250 200 VCE -800 ICE 100 -10 400 50 -20 200 0 -30 0 ICE (A) 150 600 0 10% Peak IRR VCE (V) V C E( V ) -600 IC E( A ) tRR -400 Peak IRR -1000 -1200 -0.5 0.0 0.5 t I me (S) 1.0 -50 -5 0 5 10 15 20 25 30 time (S) www.irf.com 11 IRGP30B120KD-E TO-247AD Package Outline (Dimensions are shown in millimeters (inches)) 9. For the most current drawing please refer to IR website at http://www.irf.com/package/pkigbt.html TO-247AC package is not recommended for Surface Mount Application. TO-247AD Part Marking Information EXAMPLE: T HIS IS AN IRGP30B120KD-E WIT H AS S EMBLY LOT CODE 5657 AS S EMBLED ON WW 35, 2000 IN T HE AS S EMBLY LINE "H" Note: "P" in as sembly line pos ition indicates "Lead-Free" INT ERNAT IONAL RECT IFIER LOGO ASS EMBLY LOT CODE PART NUMBER 56 035H 57 DAT E CODE YEAR 0 = 2000 WEEK 35 LINE H WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 Data and specifications subject to change without notice. 9/07 12 www.irf.com