To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.
Is Now Part of
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
©2010 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
M
FDS6990AS Rev. A2
FDS6990AS Dual 30V N-Channel PowerTrench
®
SyncFET™
FDS6990AS
Dual 30V N
-
Channel PowerTrench
®
SyncFET™
Features
■
7.5 A, 30 V. R
DS(ON)
= 22 m
Ω
@ V
GS
= 10 V
R
DS(ON)
= 28 m
Ω
@ V
GS
= 4.5 V
■
Includes SyncFET Schottky diode
■
Low gate charge (10nC typical)
■
High performance trench technology for extremely low
R
DS(ON)
■
High power and current handling capability
Applications
■
DC/DC converter
■
Motor drives
General Description
The FDS6990AS is designed to replace a dual SO-8 MOSFET
and two Schottky diodes in synchronous DC:DC power sup-
plies. This 30V MOSFET is designed to maximize power con-
version efficiency, providing a low R
DS(ON)
and low gate charge.
Each MOSFET includes integrated Schottky diodes using Fair-
child’s monolithic SyncFET technology. The performance of the
FDS6990AS as the low-side switch in a synchronous rectifier is
similar to the performance of the FDS6990A in parallel with a
Schottky diode.
Absolute Maximum Ratings
T
A
=25°C unless otherwise noted
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage 30 V
V
GSS
Gate-Source Voltage
±
20 V
I
D
Drain Current – Continuous (Note 1a) 7.5 A
– Pulsed 20
P
D
Power Dissipation for Dual Operation 2 W
Power Dissipation for Single Operation (Note 1a) 1.6
(Note 1b) 1
(Note 1c) 0.9
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +150
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient (Note 1a) 78
°
C/W
R
θ
JC
Thermal Resistance, Junction-to-Case (Note 1) 40
°
C/W
Device Marking Device Reel Size Tape width Quantity
FDS6990AS FDS6990AS 13" 12mm 2500 units
D2
D2
D1 D1
S2G2 S1 G1
Pin 1
SO-8
45
36
27
1
8
Q1
Q2
March 2010
2
www.fairchildsemi.com
FDS6990AS Rev. A2
FDS6990AS Dual 30V N-Channel PowerTrench
®
SyncFET™
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage V
GS
= 0 V, I
D
= 1 mA 30 V
∆
BV
DSS
∆
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 1 mA, Referenced to 25
°
C31mV/
°
C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 24 V, V
GS
= 0 V 500
µ
A
I
GSS
Gate–Body Leakage V
GS
=
±
20 V, V
DS
= 0 V
±
100 nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 1 mA 1 1.7 3 V
∆
V
GS(th)
∆
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 1 mA, Referenced to 25
°
C–3mV/
°
C
R
DS(on)
Static Drain–Source
On–Resistance
V
GS
= 10 V, I
D
= 7.5 A
V
GS
= 10 V, I
D
= 7.5 A, T
J
= 125
°
C
V
GS
= 4.5 V, I
D
= 6.5 A
17
26
21
22
35
28
m
Ω
I
D(on)
On–State Drain Current V
GS
= 10 V, V
DS
= 5 V 20 A
g
FS
Forward Transconductance V
DS
= 15 V, I
D
= 10 A 29 S
Dynamic Characteristics
C
iss
Input Capacitance V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
550 pF
C
oss
Output Capacitance 162 pF
C
rss
Reverse Transfer Capacitance 60 pF
R
G
Gate Resistance V
GS
= 15 mV, f = 1.0 MHz 3.1
Ω
Switching Characteristics
(Note 2)
t
d(on)
Tu r n–On Delay Time V
DS
= 15 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6
Ω
816ns
t
r
Tu r n–On Rise Time 510ns
t
d(off)
Tu r n–Off Delay Time 24 38 ns
t
f
Tu r n–Off Fall Time 4 8ns
t
d(on)
Tu r n–On Delay Time V
DS
= 15 V, I
D
= 1 A,
V
GS
= 4.5 V, R
GEN
= 6
Ω
918ns
t
r
Tu r n–On Rise Time 816ns
t
d(off)
Tu r n–Off Delay Time 14 24 ns
t
f
Tu r n–Off Fall Time 510ns
Q
g(TOT)
Total Gate Charge at Vgs = 10V V
DD
= 15 V, I
D
= 10 A, V
GS
= 5 V 10 14 nC
Q
g
Total Gate Charge at Vgs = 5V 6 8 nC
Q
gs
Gate–Source Charge 1.5 nC
Q
gd
Gate–Drain Charge 2.0 nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current 2.9 A
V
SD
Drain–Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= 2.3 A (Note 2) 0.6 0.7 V
t
rr
Diode Reverse Recovery Time I
F
= 10A, 18 nS
Q
rr
Diode Reverse Recovery Charge d
iF
/d
t
= 300 A/µs (Note 3) 11 nC
3
www.fairchildsemi.com
FDS6990AS Rev. A2
FDS6990AS Dual 30V N-Channel PowerTrench
®
SyncFET™
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
R
θ
JC is guaranteed by design while RθCA is determined by the user's board design.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. See “SyncFET Schottky body diode characteristics” below.
4
a) 78°C/W when mounted
on a 0.5 in2 pad of 2 oz
copper
b) 125°C/W when
mounted on a 0.02 in2
pad of 2 oz copper
c) 135°C/W when
mounted on a
minimum pad.
4www.fairchildsemi.com
FDS6990AS Rev. A2
FDS6990AS Dual 30V N-Channel PowerTrench® SyncFET™
Typical Characteristics
0
5
10
15
20
0 0.5 1 1.5 2
VDS, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
3.0V
4.0V
2.5V
3.5VVGS = 10V
4.5V
0.8
1
1.2
1.4
1.6
1.8
2
048121620
ID, DRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = 3.0V
6.0V
4.0V
10V
5.0V
4.5V
3.5V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID = 7.5A
VGS = 10V
0.01
0.02
0.03
0.04
0.05
0.06
0.07
246810
VGS, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON-RESISTANCE (OHM)
ID = 3.75A
TA = 125oC
TA = 25oC
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
4
8
12
16
20
1.5 2 2.5 3 3.5
VGS, GATE TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
TA = 125oC
25oC
-55oC
VDS = 5V
0.001
0.01
0.1
1
10
100
00.20.4 0.6 0.8
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
, REVERSE DRAIN CURRENT (A)
TA = 125oC
25oC
-55oC
VGS = 0V
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
5www.fairchildsemi.com
FDS6990AS Rev. A2
FDS6990AS Dual 30V N-Channel PowerTrench® SyncFET™
Typical Characteristics
0
2
4
6
8
10
0246810 12
Q
g
, GATE CHARGE (nC)
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
=7.5A
V
DS
= 10V
15V
20V
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1 1 10 100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
DC
10s
1s
100s
100µs
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
JA
= 135
o
C/W
T
A
= 25
o
C
10ms
1ms
0
10
20
30
40
50
0.001 0.01 0.1 1 10 100 1000
t
1
, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
R
JA
= 135°C/W
T
A
= 25°C
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t
1
, TIME (sec)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
θ
θ
R
θJA
(t) = r(t) * R
θJA
R
θJA
= 135 °C/W
T
J
– T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
0.1 1 10 30
20
100
1000
f = 1 MHz
VGS = 0 V
CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Crss
Coss
Ciss
6www.fairchildsemi.com
FDS6990AS Rev. A2
FDS6990AS Dual 30V N-Channel PowerTrench® SyncFET™
Typical Characteristics (continued)
SyncFET Schottky Body Diode Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in paral-
lel with PowerTrench MOSFET. This diode exhibits similar char-
acteristics to a discrete external Schottky diode in parallel with a
MOSFET. Figure 12 shows the reverse recovery characteristic
of the FDS6990AS.
Figure 12. FDS6990AS SyncFET body diode
reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an equivalent size
MOSFET produced without SyncFET (FDS6990A).
Figure 13. Non-SyncFET (FDS6990A) body
diode reverse recovery characteristic.
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
Figure 14. SyncFET body diode reverse leakage
versus drain-source voltage and temperature.
12.5nS/Div
0.4A/Div
0.4A/Div
12.5nS/Div
0.000001
0.00001
0.0001
0.001
0.01
0.1
05101520 25 30
VDS, REVERSE VOLTAGE (V)
I
DSS
, REVERSE LEAKAGE CURRENT (A)
TA = 125°C
TA = 25°C
TA = 100°C
7www.fairchildsemi.com
FDS6990AS Rev. A2
FDS6990AS Dual 30V N-Channel PowerTrench® SyncFET™
Typical Characteristics (continued)
VDS
L
Figure 15. Unclamped Inductive
Load Test Circuit
Figure 17. Gate Charge Test Circuit Figure 18. Gate Charge Waveform
Figure 19. Switching Time
Test Circuit
Figure 20. Switching Time Waveforms
Figure 16. Unclamped Inductive
Waveforms
RGE DUT
VGS
IAS
0.01Ω
VDD
+
–
tp
0V
vary tP to obtain
required peak IAS
VGS
tAV
tP
IAS
VDS
VDD
BVDSS
VDS
RL
RGEN DUT VDD
VGS
Pulse Width ≤ 1µs
Duty Cycle ≤ 0.1%
VGS
+
–
trtf
td(ON) td(OFF)
tON tOFF
Pulse Width
10%
10%
90%
10%
90%
50%
90%
50%
0V
0V
VGS
VDS
VGS QGS QGD
QG(TOT)
10V
Charge, (nC)
DUT
VDD
VGS
Ig(REF)
+
–
+
-
Same type as DUT
Drain Current
1F
10 F
10V 50k
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The following includes registe red and unregistere d trademarks and service marks, owned by Fairchild Semicond uctor and/or its g lobal subsidiaries, and i s not
intended to be an exhaustive list of all such trademarks.
*Trademarks of System General Corporat ion, used under license by Fairchild Semiconductor.
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCH ILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surg ical i mplant into the body o r (b) suppor t or sustain l ife,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expect ed to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
AccuPower™
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficentMax™
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FETBench™
FlashWriter® *
FPS™
F-PFS™
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Motion-SPM™
OptiHiT™
OPTOLOGIC®
OPTOPLANAR®
®
PDP SPM™
Power-SPM™
PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Sync-Lock™
®*
The Power Franchise®
®
TinyBoost™
TinyBuck™
TinyCalc™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
TRUECURRENT™*
μSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
tm
®
tm
tm
Datasheet Identification Product Status Definition
Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications
may change in any manner with out notice.
Preliminary First Productio n Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identificatio n Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
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Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manuf actures of semiconductor products are experien cing counterfeiting of th eir
parts. Customers who inadvert ently pur ch ase cou nte rfeit par ts e xperi en ce many prob lems such a s loss of brand rep utati on, subst anda rd p erf ormance , fa iled
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measure s to protect oursel ve s and our customers from the
proliferation of counterfeit parts. Fair child strongly encou rages cust omers to purch ase Fairch ild parts either direct ly from Fairchild or from Authorized Fai rchild
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committed to comb at this global problem and enco urage our cust omers to do thei r part in stopping this practice by buying direct or from aut horized distributors.
Rev. I47
™
www.fairchildsemi.com
FDS6990AS Rev. A2
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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