©2002 Fairchild Semiconductor Corporation Rev. A3, May 2002
SS9014
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Electrical Characteristics Ta=25°C unless otherwise noted
hFE Classification
Symbol Parameter Ratings Units
VCBO Collector-Base Voltage 50 V
VCEO Collector-Emitter Voltage 45 V
VEBO Emitter-Base Voltage 5 V
ICCollector Current 100 mA
PCCollector Power Dissipation 450 mW
TJJunction Temperature 150 °C
TSTG Storage Temperature -55 ~ 150 °C
Symbol Parame ter Test Condit ion Min. Typ. Max. Units
BVCBO Collect or-B ase Break down Voltage IC =100µA, IE =0 50 V
BVCEO Collect or-E mitter Break down Voltage IC =1mA, IB =0 45 V
BVEBO E mitter-B ase Break down Voltage IE =100µA, IC =0 5 V
ICBO Collector Cut-off Current VCB =50V, IE =0 50 nA
IEBO Emitter Cut-off Current VEB =5 V, IC =0 50 nA
hFE DC Current Gain VCE =5V, IC =1mA 60 280 1000
VCE (sat) Collector-Base Saturation Voltage IC =100mA, IB =5mA 0.14 0.3
VBE (sat) Base-Emitter Saturation Voltage IC =100mA, IB =5mA 0.84 1.0 V
VBE (on) Base-Emitter On Voltage VCE =5V, IC =2mA 0.58 0.63 0.7 V
Cob Output Capacitance VCB =10V, IE =0
f=1MHz 2.2 3.5 pF
fTCurrent Gain Bandwidth Product VCE =5V, IC =10mA 150 270 MHz
NF Noise Figure VCE =5V, IC =0.2mA
f=1KHz, RS=2KΩ0.9 10 dB
Classification A B C D
hFE 60 ~ 150 100 ~ 300 200 ~ 600 400 ~ 1000
1. Emitter 2. Base 3. Collector
SS9014
Pre-Amplifier, Low Level & Low Noise
• High total power dissipation. (PT=450mW)
• High hFE and good linearity
• Complementary to SS9015
TO-92
1
©2002 Fairchild Semiconductor Corporation
SS9014
Rev. A3, May 2002
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Vo ltage
Collector-Emitter Saturation Voltage Figure 4. Current Gain Bandwidth Product
0 1020304050
0
10
20
30
40
50
60
70
80
90
100
IB = 160µA
IB = 140µA
IB = 120µA
IB = 100µA
IB = 80µA
IB = 60µA
IB = 40µA
IB = 20µA
IC [mA], COLLECTOR CURRENT
VCE [V], COLLECTOR-EMITTER VOLTAGE
1 10 100 1000
10
100
1000 VCE = 5V
hFE, DC CURRENT GAIN
IC [mA], COLLECTOR CURRENT
1 10 100 1000
10
100
1000
IC = 20 IB
VBE (sat)
VCE (sat)
VBE(s at) , VCE(sat)[mV], SATURATION VOLTAGE
IC [mA], COLLECTOR CURRENT
1 10 100 1000
10
100
1000 VCE = 5V
fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT
IC [mA], COLLECTOR CURRENT
0.46 ±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27 ±0.20]1.27TYP
[1.27 ±0.20]
3.60 ±0.20
14.47 ±0.40
1.02 ±0.10
(0.25) 4.58 ±0.20
4.58 +0.25
–0.15
0.38 +0.10
–0.05
0.38 +0.10
–0.05
TO-92
Package Demensions
SS9014
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A3, May 2002
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
©2002 Fairchild Semiconductor Corporation Rev. H5
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
1. Life support devices or systems are devic es or syst em s
which, (a) ar e intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconduct or reserv es the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor .
The datasheet is printed for reference information only.
STAR*POWE R is used under license
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