VS-MBRS140-M3/5BT - Vishay Semiconductors

VS-MBRS140-M3

www.vishay.com Vishay Semiconductors

Revision: 26-Aug-14 1Document Number: 95747

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High Performance Schottky Rectifier, 1.0 A

FEATURES

• Small foot print, surface mountable

• Low forward voltage drop

• High frequency operation

• Guard ring for enhanced ruggedness and long

term reliability

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

DESCRIPTION

The VS-MBRS140-M3 surface mount Schottky rectifier has

been designed for applications requiring low forward drop

and very small foot prints on PC boards. Typical

applications are in disk drives, switching power supplies,

converters, freewheeling diodes, battery charging, and

reverse battery protection.

PRODUCT SUMMARY

Package SMB

IF(AV) 1.0 A

VR40 V

VF at IF0.53 V

IRM max. 4.0 mA at 125 °C

TJ max. 125 °C

Diode variation Single die

EAS 3.0 mJ

Cathode Anode

SMB

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

IF(AV) Rectangular waveform 1.0 A

VRRM 40 V

IFSM tp = 5 μs sine 380 A

VF1.0 Apk, TJ = 125 °C 0.53 V

TJRange -55 to +150 °C

VOLTAGE RATINGS

PARAMETER SYMBOL VS-MBRS140-M3 UNITS

Maximum DC reverse voltage VR40 V

Maximum working peak reverse voltage VRWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current IF(AV) 50 % duty cycle at TL = 119 °C, rectangular waveform 1.0

Maximum peak one cycle 

non-repetitive surge current IFSM

5 μs sine or 3 μs rect. pulse Following any rated

load condition and with

rated VRRM applied

380

10 ms sine or 6 ms rect. pulse 40

Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1 A, L = 6 mH 3.0 mJ

Repetitive avalanche current IAR

Current decaying linearly to zero in 1 μs

Frequency limited by TJ maximum VA = 1.5 x VR typical 1.0 A

VS-MBRS140-M3

www.vishay.com Vishay Semiconductors

Revision: 26-Aug-14 2Document Number: 95747

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note

(1) Pulse width < 300 μs, duty cycle < 2 %

Notes

(1) thermal runaway condition for a diode on its own heatsink

(2) Mounted 1" square PCB

ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS

Maximum forward voltage drop VFM (1)

1 A TJ = 25 °C 0.52 0.6

2 A 0.70 0.77

1 A TJ = 125 °C 0.48 0.53

2 A 0.63 0.71

Maximum reverse leakage current IRM (1) TJ = 25 °C VR = Rated VR

-0.1

TJ = 125 °C - 4.0

Maximum junction capacitance CTVR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C - 80 pF

Typical series inductance LSMeasured lead to lead 5 mm from package body - 2.0 nH

Maximum voltage rate of change dV/dt Rated VR- 10 000 V/μs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and storage

temperature range TJ (1), TStg -55 to +150 °C

Maximum thermal resistance, 

junction to lead RthJL (2) DC operation

See fig. 4 36

°C/W

Maximum thermal resistance, 

junction to ambient RthJA DC operation 80

Approximate weight 0.10 g

0.003 oz.

Marking device Case style SMB (similar to DO-214AA) 14

dPtot

dTJ

------------- 1

RthJA

--------------<

VS-MBRS140-M3

www.vishay.com Vishay Semiconductors

Revision: 26-Aug-14 3Document Number: 95747

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Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Peak Reverse Current vs. Reverse Voltage

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)

0.1

1.0

- Instantaneous

Forward Current (A)

- Forward Voltage Drop (V)

0.4 0.6 0.8 1.0 1.2

0.2

TJ = 150 °C

TJ = 125 °C

TJ = 25 °C

0.0001

0.1

1.0

0.01

0.001

IR - Reverse Current (mA)

VR - Reverse Voltage (V)

1051520 40

25 30 35

TJ = 150 °C

TJ = 125 °C

TJ = 100 °C

TJ = 75 °C

TJ = 50 °C

TJ = 25 °C

100

1000

- Junction Capacitance (pF)

- Reverse Voltage (V)

10 20 40

TJ = 25 °C

0.1

100

0.00001 0.0001 0.001 0.01 0.1 1

t1 - Rectangular Pulse Duration (s)

ZthJC - Thermal Impedance (°C/W)

D = 0.75

D = 0.50

D = 0.33

D = 0.25

D = 0.20

Single pulse

(thermal resistance)

PDM

Notes:

1. Duty factor D = t1/t2

2. Peak TJ = PDM x ZthJC + TC

100

VS-MBRS140-M3

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Revision: 26-Aug-14 4Document Number: 95747

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Fig. 5 - Maximum Average Forward Current vs.

Allowable Lead Temperature

Fig. 6 - Maximum Average Forward Dissipation vs.

Average Forward Current

Fig. 7 - Maximum Peak Surge Forward Current vs. Pulse Duration

Note

(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;

Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); 

PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR

100

110

120

130

150

160

140

Allowable Case Temperature (°C)

F(AV)

- Average Forward Current (A)

0.4

0.2 0.6 0.8 1.0 1.2 1.4 1.6

See note (1)

D = 0.20

D = 0.25

D = 0.33

D = 0.50

D = 0.75

Square wave (D = 0.50)

Rated VR applied

0.4

0.8

0.6

0.2

1.0

Average Power Loss (W)

IF(AV) - Average Forward Current (A)

0.3 0.6 1.50.9 1.2

RMS limit

D = 0.20

D = 0.25

D = 0.33

D = 0.50

D = 0.75

100

1000

FSM

- Non-Repetitive Surge Current (A)

- Square Wave Pulse Duration (µs)

100 1000 10 000

At any rated load condition

and with rated VRRM applied

following surge

VS-MBRS140-M3

www.vishay.com Vishay Semiconductors

Revision: 26-Aug-14 5Document Number: 95747

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

ORDERING INFORMATION TABLE

ORDERING INFORMATION (Example)

PREFERRED P/N PREFERRED PACKAGE CODE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION

VS-MBRS140-M3/5BT 5BT 3200 13" diameter plastic tape and reel

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95401

Part marking information www.vishay.com/doc?95403

Packaging information www.vishay.com/doc?95404

SPICE model www.vishay.com/doc?95299

2- Schottky MBR series

3- S = SMB

4- Current rating (1 = 1 A)

5- Voltage rating (40 = 40 V)

6- -M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free

Device code

51 32 4 6

VS- MBR S 1 40 -M3

1- Vishay Semiconductors products

Document Number: 95401 For technical questions within your region, please contact one of the following: www.vishay.com

Revision: 09-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1

SMB

Outline Dimensions

Vishay Semiconductors

DIMENSIONS in inches (millimeters)

Cathode band

DO-214AA (SMB)

0.086 (2.20)

0.077 (1.95)

0.155 (3.94)

0.130 (3.30)

0.180 (4.57)

0.160 (4.06)

0.012 (0.305)

0.006 (0.152)

0.008 (0.2)

0 (0)

0.220 (5.59)

0.205 (5.21)

0.060 (1.52)

0.030 (0.76)

0.096 (2.44)

0.084 (2.13)

Mounting Pad Layout

0.086 (2.18) MIN.

0.060 (1.52) MIN.

0.085 (2.159) MAX.

0.220 (5.59) REF.

Legal Disclaimer Notice

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Revision: 08-Feb-17 1Document Number: 91000

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