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Complementary silicon power transistors.
The 2N6609 powerbaseTM power transistors designed for high power audio, disk
head positioners and other linear applications. These devices can also be used in
power switching circuits such as relay or solenoid drivers, DC-DC converters or
inverters.
Features:
•Pb-free packages.
•High safe operating area (100% tested) 150W at 100V.
•Completely characterized for linear operation.
•High DC current gain and low saturation voltage
hFE = 15 (minimum) at 8.0A, 4.0V
VCE (sat) = 1.4V (maximum) at IC= 8.0A, IB= 0.8A.
•For low distortion complementary designs.
(TO-3)
Style 1:
Pin 1. Base
2. Emitter
Collector (Case)
16A Complementary
Power Transistors
140V, 150W
TO-3
Case 1-07
Dimensions Minimum Maximum
A1.550 (39.37) Reference
B - 1.050 (26.67)
C 0.250 (6.35) 0.335 (8.51)
D0.038 (0.97) 0.043 (1.09)
E0.055 (1.40) 0.070 (1.77)
G0.430 (10.92) BSC
H0.215 (5.46) BSC
K0.440 (11.18) 0.480 (12.19)
L0.665 (16.89) BSC
N - 0.830 (21.08)
Q0.151 (3.84) 0.165 (4.19)
U1.187 (30.15) BSC
V0.131 (3.33) 0.188 (4.77)
Dimensions : Inches (Millimetres)
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Rating Symbol Value Unit
Collector-Emitter Voltage VCEO 140
V dc
Collector-Emitter Voltage VCEX 160
Collector-Base Voltage VCBO
Emitter-Base Voltage VEBO 7
Collector Current - Continuous
- Peak (Note 2) IC
16
30 Adc
Base Current - Continuous
- Peak (Note 2) IB4
15
Total Power Dissipation at TA= 25°C
Derate above 25°C PD150
0.855
W
W/°C
Operating and Storage Junction Temperature Range TJ, Tstg -65 to +200 °C
Maximum Ratings (Note 1)
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual
stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional
operation is not implied, damage may occur and reliability may be affected.
1. Indicates JEDEC Registered Data.
2. Pulse Test: Pulse Width = 5ms, Duty Cycle ≤10%.
Characteristics Symbol Maximum Unit
Thermal Resistance, Junction-to-Case RθJC 1.17 °C/W
Thermal Characteristics
Characteristic Symbol Minimum Maximum Unit
Off Characteristics (Note 3)
Collector-Emitter Breakdown Voltage (Note 4)
(lC = 0.2A dc, lB= 0) VEO (sus) 140 -
V dc
Collector-Emitter Sustaining Voltage (Note 4)
(lC = 0.1A dc, VBE (off) = 1.5V dc, RBE = 100Ω) VCEX (sus) 160 -
Collector-Emitter Sustaining Voltage
(lC = 0.2A dc, RBE = 100Ω) VCER (sus) 150 -
Collector Cut off Current (Note 4)
(VCE = 120V dc, IB = 0) ICEO -10
mA dc
Collector Cut off Current (Note 4)
(VCE = 140V dc VBE (off) = 1.5V dc)
(VCE = 140V dc VBE (off) = 1.5V dc, TC= 150°C)
ICEX - 2
10
Collector Cut off Current
(VCB = 140V dc, IE= 0) ICBO - 2
Emitter Cut off Current (Note 4)
(VBE = 7V dc, IC= 0) IEBO - 5
Electrical Characteristics (TC= 25°C unless otherwise noted)
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Electrical Characteristics (TC= 25°C unless otherwise noted)
3. Pulse Test : Pulse Width = 300µs, Duty Cycle ≤2.0%.
4. Indicates JEDEC Registered Data.
On Characteristic (Note 3)
DC Current Gain
(lC= 8A dc, VCE = 4V dc) (Note 4)
(lC= 16A dc, VCE = 4V dc)
hFE 15
5
60
-
-
Collector-Emitter Saturation Voltage
(lC= 8A dc, IB= 800mA dc) (Note 4)
(lC= 16A dc, IB= 3.2A dc)
VCE (sat) - 1.4
4V dc
Base-Emitter On Voltage (Note 4)
(lC= 8A dc, VCE = 4V dc) VBE (on) - 2.2
Dynamic Characteristics
Magnitude of Common-Emitter
Small-Signal, Short-Circuit, Forward Current Transfer Ratio
(lC= 1A, f = 50kHz)
hfe4 - -
Small-Signal Current Gain (Note 4)
(IC= 1A dc, VCE = 4V dc, f = 1kHz) hfe 40 - -
Second Breakdown Characteristics
Second Breakdown Collector Current with Base Forward Biased
t = 1s (non-repetitive), VCE = 100V IS/b 1.5 - Adc
IC, Collector Current (Amperes)
DC Current Gain
hFE, DC Current Gain
IB, Base Current (Amperes)
Collector Saturation Region
VCE, Collector-Emitter Voltage (Volts)
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IC, Collector Current (Amperes)
“On” Voltage
V, Voltage (Volts)
VCE, Collector-Emitter Voltage (Volts)
Forward Bias Safe Operating Area
IC, Collector Current (Amperes)
TC, Case Temperature (°C)
Power Derating
Power Derating Factor (%)
Part Number Table
Description Part Number
Transistor, PNP, TO-3 MJ2955
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC- VCE
limits of the transistor that must be observed for reliable
operation: i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data is based on TJ (pk) = 200°C; TCis variable depending
on conditions. Second breakdown pulse limits are valid for
duty cycles to 10% provided TJ (pk) <200°C. At high case
temperatures, thermal limitations will reduce the power that
can be handled to values less than the limitations imposed by
second breakdown.
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