BPY62-3/4 - OSRAM Opto Semiconductors

BPY 62

NPN-Silizium-Fototransistor

Silicon NPN Phototransistor

Lead (Pb) Free Product - RoHS Compliant

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Wesentliche Merkmale

• Speziell geeignet für Anwendunge n im Bereich

von 400 nm bis 1100 nm

• Hohe Linearität

• Hermetisch dichte Metallbauform (TO-18) mit

Basisanschluss, geeignet bis 125 °C

• Gruppiert lieferbar

Anwendungen

• Lichtschranken für Gleich- und

Wechsellichtbetrieb

• Industrieelektronik

• „Messen/Steuern/Regeln“

Typ

Type Bestellnummer

Ordering Code Fotostrom , Ee= 0.5 mW/cm2, λ = 950 nm, VCE = 5 V

Photocurrent

IPCE (mA)

BPY 62 Q60215Y0062 > 0.5

BPY 62-3/4 Q60215Y5198 0.8…2.5

BPY 62-4 Q60215Y1113 1.25…2.5

Features

• Especially suitable for applications from

400 nm to 1100 nm

• High linearity

• Hermetically sealed metal package (TO-18)

with base connection, suitable up to 125 °C

• Available in groups

Applications

• Photointerrupters

• Industrial electronics

• For control and drive circuits

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BPY 62

Grenzwerte

Maximum Ratings

Bezeichnung

Parameter Symbol

Symbol Wert

Value Einheit

Unit

Betriebs- und Lagertemperatur

Operating and storage temperature range Top; Tstg – 40 …+ 125 °C

Kollektor-Emitterspannung

Collector-emitter voltage VCE 35 V

Kollektorstrom

Collector cu rr ent IC100 mA

Kollektorspitzenstrom, τ < 10 μs

Collector surge current ICS 200 mA

Emitter-Basisspannung

Emitter-base voltage VEB 7V

Verlustleistung, TA = 25 °C

Total power dissipation Ptot 200 mW

Wärmewiderstand

Thermal resistance RthJA 500 K/W

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Kennwerte (TA = 25 °C, λ = 950 nm)

Characteristics

Bezeichnung

Parameter Symbol

Symbol Wert

Value Einheit

Unit

Wellenlänge der max. Fotoempfindlichkeit

Wavelength of max. sensitivity λS max 830 nm

Spektraler Bereich der Fotoempfindlichkeit

S = 10% von Smax

Spectr al range of sens itivity

S = 10% of Smax

λ400 …1100 nm

Bestrahlungsempfindliche Fläche

Radiant sensitive area A0.11 mm2

Abmessung der Chipfläche

Dimensions of chip area L × B

L × W0.5 ×0.5 mm × mm

Halbwinkel

Half angle ϕ±8Grad

deg.

Fotostrom der Kollektor-Basis-Fotodiode

Photocurrent of collector-base photodiode

Ee = 0.5 mW/cm2, VCB = 5 V

Ev = 1000 Ix, Normlicht/standard light A,

VCB = 5 V

IPCB

5.5

17 μA

μA

Kapazität

Capacitance

VCE = 0 V, f = 1 MHz, E = 0

VCB = 0 V, f = 1 MHz, E = 0

VEB = 0 V, f = 1 MHz, E = 0

CCE

CCB

CEB

7.5

Dunkelstrom

Dark current

VCE = 20 V, E = 0

ICEO 1 (≤ 50) nA

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Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern

gekennzeichnet.

The phototransistors are grouped according to their spectral sensitivity and distinguished by

arabian figures.

Bezeichnung

Parameter Symbol

Symbol Wert

Value Einheit

Unit

-2 -3 -4 -5

Fotostrom

Photocurrent

Ee= 0.5 mW/cm2, λ = 950 nm, VCE = 5 V

Ev = 1000 Ix, Normlicht/standard light A,

VCE = 5 V

IPCE

0.5…1.0

2.4 0.8…1.6

3.8 1.25…2.5

5.8 ≥ 2.0

9.6 mA

Anstiegszeit/Abfallzeit

Rise and fall time

IC = 1 mA, VCC = 5 V, RL = 1 kΩ

tr, tf57 9 12μs

Kollektor-Emitter-Sättigungsspannung

Collector-emitter saturation voltage

IC = IPCEmin1) × 0.3,

Ee = 0.5 mW/cm2

VCEsat 150 150 160 180 mV

Stromverstärkung

Current gain

Ee = 0.5 mW/cm2, VCE =5 V

140 220 340 550 –

1) IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe.

1) IPCEmin is the min. photocurrent of the sp ecified group.

IPCE

IPCB

---------

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Relative Spectral sensitivity

Srel = f (λ)

Output Characteristics

IC = f (VCE), IB = Parameter

Photocurrent

IPCE/IPCE25o = f (TA), VCE = 5 V

100

400 500 600 700 800 900 1000 1100

Srel

Photocurrent

IPCE = f (Ee), VCE = 5 V

Output Characteristics

IC = f (VCE), IB = Parameter

Dark Current

ICEO = f (TA), VCE = 20 V, E = 0

0.01

0.1

100

1000

10000

-250255075100

CEO

°C

Total Power Dissipation

Ptot = f (TA)

Dark Current

ICEO = f (VCE), E = 0

Collector-Emitter Capacitance

CCE = f (VCE), f = 1 MHz, E = 0

0.01

0.1

0 5 10 15 20 25 30 35

ICEO

VCE

1E-03 1E-02 1E-01 1E+00 1E+01 1E+02

CCE

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Collector-Base Capacitance

CCB = f (VCB), f = 1 MHz, E = 0

Directional Characteristics

Srel = f (ϕ)

1E-03 1E-02 1E-01 1E+00 1E+01 1E+02

CCB

Emitter-Base Capacitance

CEB = f (VEB), f = 1 MHz, E = 0

1E-03 1E-02 1E-01 1E+00 1E+01 1E+02

CEB

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Maßzeichnung

Package Outlines

Maße in mm (inch) / Dimensions in mm (inch).

ø5.6 (0.220)

ø5.3 (0.209)

2.54 (0.100)

spacing

ø4.8 (0.189)

E C B

(2.7 (0.106))

5.1 (0.201)

4.8 (0.189)

14.5 (0.571)

12.5 (0.492)

ø0.45 (0.018)

Radiant

GMOY6019

ø4.6 (0.181)

5.4 (0.213)

6.2 (0.244)

Chip position sensitive area

0.9 (0.035)

1.1 (0.043)

0.9 (0.035)

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Lötbedingungen

Soldering Conditions

Wellenlöten (TTW) (nach CECC 00802)

TTW Soldering (acc. to CECC 00802)

Published by

OSRAM Opto Semiconductors GmbH

Wernerwerkstrasse 2, D-93049 Regensburg

www.osram-os.com

The information describes the type of component and shall not be considered as assu red characteristics.

Terms of delivery and rights to change design reserved. Due to technical requirements components may contain

dangerous substances. For information on the types in que stion please contact our Sales Organizatio n.

Packing

Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.

By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing

material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs

incurred.

Components used in life-support devices or systems must be expressly authorized for such purpose! Critical

components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.

1 A critical componen t is a component usedin a life-support device or syste m whose failure can reasonably be expected

to cause the failure of that life-support devic e or system, or to a ffect its safety or e ffectiveness of that device or system.

2 Life support devices or syste ms are intended (a) to be im planted in the human body, or (b) to sup port and/or maintain

and sustain human life. If they fail, it is reas onable to assume that the health of the user may be endangered.

OHLY0598

050 100 150 200 250

100

150

200

250

300

235 C

10 s

C... 260

1. Welle

1. wave

2. Welle

2. wave

5 K/s 2 K/s

ca 200 K/s

CC... 130100

2 K/s Zwangskühlung

forced cooling

Normalkurve

standard curve

Grenzkurven

limit curves