2SD2121(L)/(S) - Hitachi Semiconductor

2SD2121(L)/(S)

Silicon NPN Epitaxial

ADE-208-925 (Z)

1st. Edition

Sep. 2000

Application

Low frequency power amplifier complementary pair with 2SB1407(L)/(S)

Outline

123

11. Base

2. Collector

3. Emitter

4. Collector

DPAK

S Type

L Type

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Collector to base voltage VCBO 35 V

Collector to emitter voltage VCEO 35 V

Emitter to base voltage VEBO 5V

Collector current IC2.5 A

Collector peak current IC(peak) 3A

Collector power dissipation PC*118 W

Junction temperature Tj 150 °C

Storage temperature Tstg –55 to +150 °C

Note: 1. Value at TC = 25°C.

2SD2121(L)/(S)

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Collector to base breakdown

voltage V(BR)CBO 35 — — V IC = 1 mA, IE = 0

Collector to emitter breakdown

voltage V(BR)CEO 35 — — V IC = 10 mA, RBE = ∞

Emitter to base breakdown

voltage V(BR)EBO 5——VI

= 1 mA, IC = 0

Collector cutoff current ICBO ——20µAV

CB = 35 V, IE = 0

DC current transfer ratio hFE1*160 — 320 VCE = 2 V, IC = 0.5 A*2

hFE2 20 — — VCE = 2 V, IC = 1.5 A*2

Base to emitter voltage VBE — — 1.5 V VCE = 2 V, IC = 1.5 A*2

Collector to emitter saturation

voltage VCE(sat) — — 1.0 V IC = 2 A, IB = 0.2 A*2

Notes: 1. The 2SD2121(L)/(S) is grouped by hFE1 as follows.

BCD

60 to 120 100 to 200 160 to 320

2. Pulse test.

Maximum Collector Dissipation Curve

0 50 100 150

Case temperature TC (°C)

Collector power dissipation PC (W)

1.0

3.0

Collector current IC (A)

0.3

0.11103 30 100

Collector to emitter voltage VCE (V)

Ta = 25°C

1 shot pulse

iC(peak)

IC(max)

1 ms

Area of Safe Operation

DC Operation

= 25°C)

PW = 10 ms

2SD2121(L)/(S)

Ta = 25°C

IB = 0

2.0

1.6

1.2

0.8

0.4

Collector current IC (A)

Collector to emitter voltage VCE (V)

3254

Typical Output Characteristics

2 mA

1,000

300

100

0.03 0.1

DC current transfer ratio hFE

0.3

Collector current IC (A)

1.0 3.0

VCE = 2 V

Ta = 25°C

DC Current Transfer Ratio

vs. Collector Current

Collector to Emitter Saturation Voltage

vs. Collector Current

1.0

0.3

0.1

Collector to emitter saturation voltage VCE(sat) (V)

0.03

0.01

0.03 0.30.1 1.0 3.0

Collector current IC (A)

IC = 10 IB

Ta = 25°C

2.0

1.6

1.2

0.8

0.4

Collector current IC (A)

0.4

Base to emitter voltage VBE (V)

1.20.8 2.01.6

Typical Transfer Characteristics

VCE = 2 V

Ta = 25°C

2SD2121(L)/(S)

Package Dimensions

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

DPAK (L)-(1)

—

Conforms

0.42 g

Unit: mm

6.5 ± 0.5 2.3 ± 0.2

0.55 ± 0.1

1.2 ± 0.3

0.55 ± 0.1

5.5 ± 0.5 1.7 ± 0.5

16.2 ± 0.5

3.1 ± 0.5

5.4 ± 0.5

1.15 ± 0.1

2.29 ± 0.5 2.29 ± 0.5

0.8 ± 0.1

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

DPAK (S)-(1)

—

Conforms

0.28 g

Unit: mm

6.5 ± 0.5

5.4 ± 0.5 2.3 ± 0.2

0.55 ± 0.1

0 – 0.25

0.55 ± 0.1

1.7 ± 0.5

5.5 ± 0.5

2.5 ± 0.5

1.15 ± 0.1

0.8 ± 0.1

2.29 ± 0.5

1.2 Max

(4.9)

(5.3)

2SD2121(L)/(S)

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for maximum rating, operating supply voltage range, heat radiation characteristics, installation

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