Si2323DS New Product Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.039 @ VGS = -4.5 V -4.7 0.052 @ VGS = -2.5 V - 4.1 0.068 @ VGS = -1.8 V - 3.5 APPLICATIONS D Load Switch D PA Switch TO-236 (SOT-23) G 1 3 S D 2 Top View Si2323DS (D3)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 sec Steady State Drain-Source Voltage VDS -20 Gate-Source Voltage VGS 8 Continuous Drain Current (TJ = 150_C) _ a, b TA = 25_C TA = 70_C Pulsed Drain Current ID Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b IS TA = 25_C TA = 70_C Operating Junction and Storage Temperature Range PD V -3.7 - 4.7 -3.8 IDM Unit -2.9 A -20 -1.0 -0.6 1.25 0.75 0.8 0.48 TJ, Tstg W _C -55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol t 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Steady State Steady State RthJA RthJF Typical Maximum 75 100 120 166 40 50 Unit _C/W C/W Notes a. Surface Mounted on 1" x 1" FR4 Board. b. Pulse width limited by maximum junction temperature. Document Number: 72024 S-22121--Rev. B, 25-Nov-02 www.vishay.com 1 Si2323DS New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Symbol Test Conditions Min Typ Max V(BR)DSS VGS = 0 V, ID = -250 mA -20 VGS(th) VDS = VGS, ID = -250 mA -0.40 Gate-Body Leakage IGSS VDS = 0 V, VGS = 8 V 100 VDS = -16 V, VGS = 0 V -1 Zero Gate Voltage Drain Current IDSS VDS = -16 V, VGS = 0 V, TJ = 55_C -10 On-State Drain Currenta ID(on) VDS -5 V, VGS = -4.5 V VGS = -4.5 V, ID = -4.7 A 0.031 0.039 rDS(on) VGS = -2.5 V, ID = -4.1 A 0.041 0.052 0.068 Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage V -1.0 -20 nA m mA A VGS = -1.8 V, ID = -2.0 A 0.054 gfs VDS = -5 V, ID = -4.7 A 16 VSD IS = -1.0 A, VGS = 0 V 0.7 -1.2 12.5 19 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = -10 V, VGS = -4.5 V ID -4.7 A 1.7 nC 3.3 1020 VDS = -10 V, VGS = 0, f = 1 MHz 191 pF 140 Switchingc td(on) Turn-On Time Turn-Off Time tr td(off) VDD = -10 V, RL = 10 W ID -1.0 A, VGEN = -4.5 V RG = 6 W tf 25 40 43 65 71 110 48 75 ns Notes a. Pulse test: PW 300 ms duty cycle 2%. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. www.vishay.com 2 Document Number: 72024 S-22121--Rev. B, 25-Nov-02 Si2323DS New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 20 20 VGS = 5 thru 2.5 V TC = -55_C 16 2V I D - Drain Current (A) I D - Drain Current (A) 16 12 8 1.5 V 4 25_C 12 125_C 8 4 1V 0 0 1 2 3 4 0 0.0 5 0.5 VDS - Drain-to-Source Voltage (V) 1.0 2.0 2.5 VGS - Gate-to-Source Voltage (V) Capacitance On-Resistance vs. Drain Current 1800 0.15 1500 0.12 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) 1.5 0.09 VGS = 1.8 V 0.06 VGS = 2.5 V 0.03 1200 Ciss 900 600 Coss 300 VGS = 4.5 V Crss 0.00 0 0 4 8 12 16 20 0 4 ID - Drain Current (A) 12 16 20 VDS - Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 5 1.5 1.4 VDS = 6 V ID = 4.7 A 4 r DS(on) - On-Resistance ( W) (Normalized) V GS - Gate-to-Source Voltage (V) 8 3 2 1 1.3 VGS = 4.5 V ID = 4.7 A 1.2 1.1 1.0 0.9 0.8 0.7 0 0 3 6 9 Qg - Total Gate Charge (nC) Document Number: 72024 S-22121--Rev. B, 25-Nov-02 12 15 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com 3 Si2323DS New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.15 20 r DS(on) - On-Resistance ( W ) I S - Source Current (A) 10 TJ = 150_C TJ = 25_C 1 0.12 0.09 ID = 4.7 A ID = 2 A 0.06 0.03 0.00 0.1 0.0 0.2 0.4 0.6 1.0 0.8 0 1.2 1 VSD - Source-to-Drain Voltage (V) 2 4 5 VGS - Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power 0.4 12 ID = 140 mA 0.3 10 8 0.2 Power (W) V GS(th) Variance (V) 3 0.1 6 0.0 4 -0.1 2 TA = 25_C -0.2 -50 0 -25 0 25 50 75 100 125 150 0.01 0.1 TJ - Temperature (_C) 1 10 100 600 Time (sec) Safe Operating Area 100 IDM Limited rDS(on) Limited I D - Drain Current (A) 10 P(t) = 0.0001 P(t) = 0.001 1 0.1 ID(on) Limited P(t) = 0.01 P(t) = 0.1 P(t) = 1 TA = 25_C Single Pulse P(t) = 10 dc BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) www.vishay.com 4 Document Number: 72024 S-22121--Rev. B, 25-Nov-02 Si2323DS New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 120_C/W 0.02 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 100 600 Square Wave Pulse Duration (sec) Document Number: 72024 S-22121--Rev. B, 25-Nov-02 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1