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Si2323DS
Vishay Siliconix New Product
www.vishay.com
2Document Number: 72024
S-22121—Rev. B, 25-Nov-02
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter Symbol Test Conditions Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = -250 mA-20
Gate-Th r e s h o l d Voltage VGS(th) VDS = VGS, ID = -250 mA-0.40 -1.0 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = 8 V 100 nA
VDS = -16 V, VGS = 0 V -1
Zero Gate Voltage Drain Current IDSS VDS = -16 V, VGS = 0 V, TJ = 55_C-10 mA
On-State Drain CurrentaID(on) VDS -5 V, VGS = -4.5 V -20 A
VGS = -4.5 V, ID = -4.7 A 0.031 0.039
Drain-Source On-ResistancearDS(on) VGS = -2.5 V, ID = -4.1 A 0.041 0.052 W
VGS = -1.8 V, ID = -2.0 A 0.054 0.068
Forward T ransconductanceagfs VDS = -5 V, ID = -4.7 A 16 S
Diode Forward Voltage VSD IS = -1.0 A, VGS = 0 V 0.7 -1.2 V
Dynamicb
Total Gate Charge Qg12.5 19
Gate-Source Charge Qgs VDS = -10 V, VGS = -4.5 V
I
-4.7 A 1.7 nC
Gate-Drain Charge Qgd
ID
-4.7 A 3.3
Input Capacitance Ciss 1020
Output Capacitance Coss VDS = -10 V, VGS = 0, f = 1 MHz 191 pF
Reverse Transfer Capacitance Crss 140
Switchingc
td(on) 25 40
T urn-On Time trVDD = -10 V, RL = 10 W
43 65
td(off) ID -1.0 A, VGEN = -4.5 V
RG = 6 W71 110 ns
Turn-Off Time tf48 75
Notes
a. Pulse test: PW 300 ms duty cycle 2%.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.