FEATURES
DTrenchFETr Power MOSFET
APPLICATIONS
DLoad Switch
DPA Switch
Si2323DS
Vishay Siliconix
New Product
Document Number: 72024
S-22121—Rev. B, 25-Nov-02 www.vishay.com
1
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)ID (A)
0.039 @ VGS = -4.5 V -4.7
-20 0.052 @ VGS = -2.5 V - 4.1
0.068 @ VGS = -1.8 V - 3.5
G
S
D
Top View
2
3
TO-236
(SOT-23)
1
Si2323DS (D3)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 sec Steady State Unit
Drain-Source Voltage VDS -20
Gate-Source Voltage VGS 8V
_a, b TA = 25_C- 4.7 -3.7
Continuous Drain Current (TJ = 150
_
C)a, bTA = 70_CID-3.8 -2.9
Pulsed Drain Current IDM -20 A
Continuous Source Current (Diode Conduction)a, bIS-1.0 -0.6
TA = 25_C1.25 0.75
Maximum Power Dissipationa, bTA = 70_CPD0.8 0.48 W
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t 5 sec 75 100
Maximum Junction-to-AmbientaSteady State RthJA 120 166 _C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 40 50
C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature.
Si2323DS
Vishay Siliconix New Product
www.vishay.com
2Document Number: 72024
S-22121Rev. B, 25-Nov-02
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter Symbol Test Conditions Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = -250 mA-20
Gate-Th r e s h o l d Voltage VGS(th) VDS = VGS, ID = -250 mA-0.40 -1.0 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = 8 V 100 nA
VDS = -16 V, VGS = 0 V -1
m
Zero Gate Voltage Drain Current IDSS VDS = -16 V, VGS = 0 V, TJ = 55_C-10 mA
On-State Drain CurrentaID(on) VDS -5 V, VGS = -4.5 V -20 A
VGS = -4.5 V, ID = -4.7 A 0.031 0.039
Drain-Source On-ResistancearDS(on) VGS = -2.5 V, ID = -4.1 A 0.041 0.052 W
VGS = -1.8 V, ID = -2.0 A 0.054 0.068
Forward T ransconductanceagfs VDS = -5 V, ID = -4.7 A 16 S
Diode Forward Voltage VSD IS = -1.0 A, VGS = 0 V 0.7 -1.2 V
Dynamicb
Total Gate Charge Qg12.5 19
Gate-Source Charge Qgs VDS = -10 V, VGS = -4.5 V
I
D
-4.7 A 1.7 nC
Gate-Drain Charge Qgd
ID
-4.7 A 3.3
Input Capacitance Ciss 1020
Output Capacitance Coss VDS = -10 V, VGS = 0, f = 1 MHz 191 pF
Reverse Transfer Capacitance Crss 140
Switchingc
td(on) 25 40
T urn-On Time trVDD = -10 V, RL = 10 W
43 65
td(off) ID -1.0 A, VGEN = -4.5 V
RG = 6 W71 110 ns
Turn-Off Time tf48 75
Notes
a. Pulse test: PW 300 ms duty cycle 2%.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Si2323DS
Vishay Siliconix
New Product
Document Number: 72024
S-22121Rev. B, 25-Nov-02 www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
300
600
900
1200
1500
1800
0 4 8 12 16 20
0
4
8
12
16
20
0.0 0.5 1.0 1.5 2.0 2.5
0.00
0.03
0.06
0.09
0.12
0.15
0 4 8 12 16 20
0
4
8
12
16
20
012345
0
1
2
3
4
5
03691215 0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
-50 -25 0 25 50 75 100 125 150
VGS = 5 thru 2.5 V
25_C
Crss
Coss
Ciss
VDS = 6 V
ID = 4.7 A VGS = 4.5 V
ID = 4.7 A
VGS = 4.5 V
VGS = 2.5 V
1 V
125_C
1.5 V
Output Characteristics Transfer Characteristics
Gate Charge
On-Resistance vs. Drain Current
VDS - Drain-to-Source Voltage (V)
- Drain Current (A)ID
VGS - Gate-to-Source Voltage (V)
- Drain Current (A)ID
- Gate-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
VDS - Drain-to-Source Voltage (V)
C - Capacitance (pF)
VGS - On-Resistance (rDS(on) W)
ID - Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
TJ - Junction Temperature (_C)
(Normalized)
- On-Resistance (rDS(on) W)
VGS = 1.8 V
2 V
TC = -55_C
Si2323DS
Vishay Siliconix New Product
www.vishay.com
4Document Number: 72024
S-22121Rev. B, 25-Nov-02
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
-0.2
-0.1
0.0
0.1
0.2
0.3
0.4
-50 -25 0 25 50 75 100 125 150
ID = 140 mA
1.0 1.2
0.00
0.03
0.06
0.09
0.12
0.15
012345
0.1
10
20
ID = 4.7 A
0.01
01
6
12
2
4
10 6000.1
0.0 0.2 0.4 0.6 0.8
TJ = 150_C
Threshold Voltage
Variance (V)VGS(th)
TJ - Temperature (_C)
Power (W)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
- On-Resistance (rDS(on) W)
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
- Source Current (A)IS
T ime (sec)
8
10
100
TA = 25_C
1TJ = 25_C
Safe Operating Area
VDS - Drain-to-Source Voltage (V)
100
1
0.1 1 10 100
0.01
10
TA = 25_C
Single Pulse
- Drain Current (A)ID
P(t) = 10
dc
0.1
IDM Limited
ID(on)
Limited
rDS(on) Limited
BVDSS Limited
P(t) = 1
P(t) = 0.1
P(t) = 0.01
P(t) = 0.001
P(t) = 0.0001
ID = 2 A
Si2323DS
Vishay Siliconix
New Product
Document Number: 72024
S-22121Rev. B, 25-Nov-02 www.vishay.com
5
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
Normalized Effective Transient
Thermal Impedance
2
1
0.1
0.01 10-3 10-2 1 10 60010-1
10-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
100
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 120_C/W
3. TJM - TA = PDMZthJA(t)
t1
t2
t1t2
Notes:
4. Surface Mounted
PDM
Legal Disclaimer Notice
Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
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