Nichrome on Silicon
BI Technologies Corporation
4200 Bonita Place
Fullerton, CA 92835 USA
Website: www.bitechnologies.com
August 25, 2006 page 2 of 3 BI technologies
PACKAGE POWER, WATTS
PACKAGE POWER, WATTSPACKAGE POWER, WATTS
PACKAGE POWER, WATTS @ 70°C
@ 70°C @ 70°C
@ 70°C3
33
3
QSOP SOIC (Narrow) SOIC (Wide) P-DIP
16 20 24 8 14 16 16 20 24 8 14 16
0.75 1.0 1.0 0.4 0.7 0.8 1.0 1.2 1.2 0.4 0.6 0.8
POWER DERA
POWER DERAPOWER DERA
POWER DERATING CURVE
TING CURVETING CURVE
TING CURVE
ENVIRONMENTAL (MIL
ENVIRONMENTAL (MILENVIRONMENTAL (MIL
ENVIRONMENTAL (MIL-
--
-R
RR
R-
--
-83401)
83401)83401)
83401)
Thermal Shock plus Power Conditioning ∆R 0.1%
Short Time Overload ∆R 0.1%
Terminal Strength ∆R 0.1%
Moisture Resistance ∆R 0.1%
Mechanical Shock ∆R 0.1%
Vibration ∆R 0.1%
Low Temperature Operation ∆R 0.05%
High Temperature Exposure ∆R 0.1%
Resistance to Solder Heat ∆R 0.1%
Marking Permanency Per MIL-STD-202, Method 215
Flammability UL-94V-0 Rated
Storage Temperature Range -55°C to +125°C
MECHANICAL
MECHANICALMECHANICAL
MECHANICAL
Lead Plating 80/20 Tin Lead (Standard)
100 matt Tin (RoHS)
Lead Material Copper Alloy
Lead Configuration Gull Wing
Lead Coplanarity 0.004” (0.102 mm)
Substrate Material Silicon
Resistor Material Passivated Nichrome
Body Material Molded Epoxy
3 Power per resistor @ 70°C, Maximum is 100 mW, not to exceed package power