MWI 100-06 A8 IC25 = 130 A = 600 V VCES VCE(sat) typ. = 2.0 V IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 13, 21 1 2 Preliminary data 5 6 9 10 19 17 15 3 4 7 8 E72873 11 12 See outline drawing for pin arrangement 14, 20 Features IGBTs Symbol Conditions VCES TVJ = 25C to 150C Maximum Ratings 600 V 20 V 130 88 A A ICM = 200 VCEK VCES A VGES IC25 IC80 TC = 25C TC = 80C RBSOA VGE = 15 V; RG = 2.2 ; TVJ = 125C Clamped inductive load; L = 100 H tSC (SCSOA) VCE = VCES; VGE = 15 V; RG = 2.2 ; TVJ = 125C non-repetitive Ptot TC = 25C Symbol Conditions 10 s 410 W NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes solderable pins for PCB mounting package with copper base plate Advantages Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. VCE(sat) IC = 100 A; VGE = 15 V; TVJ = 25C TVJ = 125C VGE(th) IC = 1.5 mA; VGE = VCE ICES VCE = VCES; VGE = 0 V; TVJ = 25C TVJ = 125C IGES td(on) tr td(off) tf Eon Eoff 2.0 2.3 4.5 2.5 V V 6.5 V 1.2 mA mA 400 nA 0.9 VCE = 0 V; VGE = 20 V Inductive load, TVJ = 125C VCE = 300 V; IC = 100 A VGE = 15 V; RG = 2.2 25 11 150 30 1.0 2.9 ns ns ns ns mJ mJ Cies QGon VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 300 V; VGE = 15 V; IC = 125 A 4.3 340 nF nC RthJC (per IGBT) IXYS reserves the right to change limits, test conditions and dimensions. (c) 2007 IXYS All rights reserved space savings reduced protection circuits package designed for wave soldering Typical Applications AC motor control AC servo and robot drives power supplies 0.3 K/W 20070912a 1-2 MWI 100-06 A8 Diodes Equivalent Circuits for Simulation Symbol Conditions Maximum Ratings IF25 IF80 TC = 25C TC = 80C 140 88 Symbol Conditions Characteristic Values min. typ. max. VF IF = 100 A; VGE = 0 V; TVJ = 25C TVJ = 125C 1.9 1.4 IRM trr IF = 60 A; diF/dt = -500 A/s; TVJ = 125C VR = 300 V; VGE = 0 V 28 100 RthJC (per diode) Conduction A A 2.1 V V A ns 0.61 K/W IGBT (typ. at VGE = 15 V; TJ = 125C) V0 = 1.1 V; R0 = 12 m Free Wheeling Diode (typ. at TJ = 125C) V0 = 1.15 V; R0 = 2.5 m Thermal Response Module Symbol Conditions TVJ TJM Tstg operating VISOL Md Symbol Maximum Ratings -40...+125 +150 -40...+125 C C C IISOL 1 mA; 50/60 Hz 2500 V~ Mounting torque (M5) 3-6 Nm Conditions Characteristic Values min. typ. max. Rpin-chip 1.8 dS dA Creepage distance on surface Strike distance in air RthCH with heatsink compound 10 10 Weight IXYS reserves the right to change limits, test conditions and dimensions. (c) 2007 IXYS All rights reserved IGBT (typ.) Cth1 = 0.232 J/K; Rth1 = 0.223 K/W Cth2 = 1.504 J/K; Rth2 = 0.077 K/W Free Wheeling Diode (typ.) Cth1 = 0.138 J/K; Rth1 = 0.48 K/W Cth2 = 0.957 J/K; Rth2 = 0.13 K/W m mm mm 0.01 K/W 300 g Dimensions in mm (1 mm = 0.0394") 20070912a 2-2