KBP200 - KBP210 SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 2.0 Amperes
* High case dielectric strength
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
* Case : Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 3.4 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL KBP
200 KBP
201 KBP
202 KBP
204 KBP
206 KBP
208 KBP
210 UNIT
Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 Volts
Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 Volts
Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 Volts
Maximum Average Forward Current Tc = 50°CIF(AV) 2.0 Amps.
Peak Forward Surge Current, Single half sine wave
Superimposed on rated load (JEDEC Method) IFSM 60 Amps.
Rating for fusing ( t < 8.3 ms. ) I2t10 A2S
Maximum Forward Voltage per Diode at IF = 1.0 Amp. VF1.0 Volts
Maximum DC Reverse Current Ta = 25 °CIR10 µA
at Rated DC Blocking Voltage Ta = 100 °CIR(H) 1.0 mA
Typical Junction Capacitance per Diode (Note 1) CJ24 pF
Typical Thermal Resistance (Note 2) RθJA 30 °C/W
Operating Junction Temperature Range TJ - 50 to + 125 °C
Storage Temperature Range TSTG - 50 to + 125 °C
Notes :
1 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts.
2 ) Thermal resistance from Junction to Ambient with units mounted on a 0.47" X 0.47" ( 12mm X 12mm ) Cu. Pads.
UPDATE : MARCH 6, 2000
RATING
0.105 (2.66)
KBP
0.71 (18.0)
0.276 (7.01 )
0.236 (5.99)
0.16 (4.00)
0.14 (3.55)
0.035 (0.89)
0.028 (0.71)
0.500 (12.7)
Dimensions in inches and ( millimeter )
AC AC
0.825 (20.95)