INTERSIL 2N5018,2N5019 P-Channel JFET APPLICATIONS PIN CHIP * Analog Switches CONFIGURATION TOPOGRAPHY Commutators 10-18 5508B Choppers ogo | _ On30 FEATURES r eos oor * Low Insertion Loss fdg(on) < 752 (2N5018) even (| | a orKo * No Offset or Error Voltages Generate ted 037 | o0ss ; _ bm by Closed Switch 0677 * 0095 Purely Resistive LL ABSOLUTE MAXIMUM RATINGS NOTE SUBSTAATE tS GATE Reverse Gate-Drain or Gate-Source Voitage d (Note Io... cece cece eee eee 30 V S s ORDERING INFORMATION Gate Current... 2... eee ees 50 mA . Total Device Dissipation, Free-Air TO-18 WAFER DICE (Derate 3 MWIPC).. 2. eee 500 mw 2N5018 | 2N5018/W | 2N5018/D Storage Temperature Range. ... 65to + 200C 2N5019 | 2N5019/W | 2N5019/D Lead Temperature : , (1/16" from case for 60 seconds)......... 300C ELECTRICAL CHARACTERISTICS (25 C unless otherwise noted) 2N5018 2N5019 Characteristic Unit Test Conditions Min | Max | Min | Max BYess Gate-Source Breakdown Voltage 30 30 Vv Ig = 1A, Vos = 0 less Gate Reverse Current 2 2] nA Ves = 15 V, Vpg = 9 = 10 ~10 Vos = ~ 15 V, Vag = 12 V (2N5018) I i ff Gs =~ . Diofy Drain Cutoff Current 10 10 | 4A Vag = 7 V (2N5019} 150C A ~2 ~2 nA T tpGo Drain Reverse Current Vog = - 5V. Ig =0 --- \ ~3 ~3] 2A 150C c | Basic _Gate-Source Cutoft Voltage 10 5} Vv Vos = - 18 VIp= 14A Ipss Saturation Drain Current <0 5 mA Vpg = ~20V, Vag = 0 - 7 ~ Vas = 0, Ip = 6mA (N5OT8), | Vpsien) _ Drain-Source ON Voltage 0.5 0.5 Vv Ip = 3A 2NE018) _| 1 Static Drain-Source ON 15 150 a ' , TMA, 0 = -1MA, Veg = DS(on) Resistance D Gs fde(on) _ Drain-Source ON Resistance 75 150 | 0 ip =0, Vag =0 = we | D | Giss Common-Source input 45 45 Wps = ~15V,Vgg =0 Y Capacitance pF f=1MHz N Common-Source Reverse Vos = 0. Vas = 12 V (2N5018), a | Corse 10 10 M Transfer Capacitance Vag = 7 V (2N5019) 4 t - I 'd(on) Turn-ON Delay Time 15 15 Vop = -6. V@gion) = Cit Rise Time 20 75 . ns Vascotty pion) RL tatothy_ Turn-Otf Delay Time 45 25 2N5018 12V -6mA 9100 tf Fail Time 50. 100 2N5019 7V 0 --3mA 1.8K0 INPUT PULSE . SAMPLING SCOPE NOTE 1: D trical RISE TIME < i ns RISE TIME 0.4 ns ? Due to symmetrical geometry FALL TIME < 1 ns INPUT RESISTANCE 10 Mc these units may be operated with source and drain leads interchanged. PULSE WIDTH 100 ns INPUT CAPACITANCE 1.6 pF REPLETION RATE 1 MHz 1-74