LESHAN RADIO COMPANY, LTD.
MMBV105GLT–1/2
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3
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CASE 318–08, STYLE 8
SOT– 23 (TO–236AB)
MMBV105GLT1
This device is designed in the surface Mount package for
general frequency control and tuning applications.It provides
solid-state reliability in replacement of mechanical
tuning methods.
• Controlled and Uniform Tuning Ration
Silicon Tuning Diode
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CATHODE 1
ANODE
MAXIMUM RATINGS(EACH DIODE)
Rating Symbol Value Unit
Reverse Voltage V R30 Vdc
Forward Current I F200 mAdc
Device Dissipation @T A = 25°C P D 225 mW
Derate above 25°C 1.8 mW/°C
Junction Temperature T J+125 °C
Storage Temperature Range T stg –55 to +150 °C
DEVICE MARKING
MMBV105GLT1=M4E
ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
Reverse Breakdown Voltage V (BR)R 30 — Vdc
( I R=10µAdc)
Reverse Voltage Leakage Current I R— 50 nAdc
( VR =28Vdc)
Min Max Typ Min Max
MMBV105GL T1 1.5 2.8 250 4.0 6.5
Device Type
CT
VR=25Vdc,f =1.0MHz
pF
Q
V R=3.0Vdc
f=50MHz
CR
C3/C25
f=1.0MHz