VS-STPS30L30CTPbF, VS-STPS30L30CT-N3
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Revision: 30-Aug-11 1Document Number: 94328
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Schottky Rectifier, 2 x 15 A
FEATURES
• 150 °C TJ operation
• Very low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
This center tap Schottky rectifier has been optimized for very
low forward voltage drop, with moderate leakage. The
proprietary barrier technology allows for reliable operation up
to 150 °C junction temperature. Typical applications are in
switching power supplies, converters, freewheeling diodes,
and reverse battery protection.
PRODUCT SUMMARY
Package TO-220AB
IF(AV) 2 x 15 A
VR30 V
VF at IF0.37 V
IRM max. 350 mA at 125 °C
TJ max. 150 °C
Diode variation Common cathode
EAS 15 mJ
Anode
13
2
Base
common
cathode
2
Common
cathode
Anode
TO-220AB
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 2 × 15 A
VRRM 30 V
VF15 Apk, TJ = 125 °C (per leg) 0.37
TJRange - 55 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-STPS30L30CTPbF VS-STPS30L30CT-N3 UNITS
Maximum DC reverse voltage VR30 30 V
Maximum working peak reverse voltage VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current per device IF(AV) 50 % duty cycle at TC = 140 °C, rectangular waveform 30
A
per leg 15
Maximum peak one cycle
non-repetitive surge current IFSM
5 µs sine or 3 µs rect. pulse Following any rated
load condition and
with rated VRRM
applied
1450
10 ms sine or 6 ms rect. pulse 220
Non-repetitive avalanche energy per leg EAS TJ = 25 °C, IAS = 2 A, L = 7.5 mH 15 mJ
Repetitive avalanche current per leg IAR Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical 2A
VS-STPS30L30CTPbF, VS-STPS30L30CT-N3
www.vishay.com Vishay Semiconductors
Revision: 30-Aug-11 2Document Number: 94328
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop per leg VFM (1)
15 A TJ = 25 °C 0.46
V
30 A 0.57
15 A TJ = 125 °C 0.37
30 A 0.50
Maximum reverse leakage current per leg IRM
TJ = 25 °C VR = Rated VR
1.50 mA
TJ = 125 °C 350
Maximum junction capacitance per leg CTVR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 1500 pF
Typical series inductance per leg LSMeasured lead to lead 5 mm from package body 8.0 nH
Maximum voltage rate of change dV/dt Rated VR10 000 V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and
storage temperature range TJ, TStg - 55 to 150 °C
Maximum thermal resistance,
junction to case per leg RthJC DC operation
1.5
°C/W
Maximum thermal resistance,
junction to case per package 0.8
Approximate weight 2g
0.07 oz.
Mounting torque minimum 6 (5) kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style TO-220AB STPS30L30CT
VS-STPS30L30CTPbF, VS-STPS30L30CT-N3
www.vishay.com Vishay Semiconductors
Revision: 30-Aug-11 3Document Number: 94328
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
1
100
10
1000
I
F
- Instantaneous Forward Current (A)
V
FM
- Forward Voltage Drop (V)
0.2 0.4 0.6 0.81.2 1.6
1.0 1.4
0
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.1
1
10
0.01
1000
100
IR - Reverse Current (mA)
VR - Reverse Voltage (V)
515 302520
10
0
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
100
1000
10 000
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
105 152025 35
30
0
T
J
= 25 °C
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
t1 - Rectangular Pulse Duration (s)
ZthJC - Thermal Impedance (°C/W)
10
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
PDM
t1
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
VS-STPS30L30CTPbF, VS-STPS30L30CT-N3
www.vishay.com Vishay Semiconductors
Revision: 30-Aug-11 4Document Number: 94328
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
Note
(1) Formula used: TC = TJ - Pd x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6)
130
135
140
145
150
Allowable Case Temperature (°C)
IF(AV) - Average Forward Current (A)
10 5 15 20
25
0
DC
See note (1)
Square wave (D = 0.50)
0
2
6
8
4
10
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
1051520
25
0
DC
RMS limit
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
DC
100
10 000
1000
IFSM - Non-Repetitive Surge Current (A)
tp - Square Wave Pulse Duration (µs)
100 1000 10 000
10
At any rated load condition
and with rated VRRM applied
following surge
VS-STPS30L30CTPbF, VS-STPS30L30CT-N3
www.vishay.com Vishay Semiconductors
Revision: 30-Aug-11 5Document Number: 94328
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-STPS30L30CTPbF 50 1000 Antistatic plastic tube
VS-STPS30L30CT-N3 50 1000 Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95222
Part marking information TO-220AB PbF www.vishay.com/doc?95225
TO-220AB -N3 www.vishay.com/doc?95028
SPICE model www.vishay.com/doc?95287
- Schottky STPS series
- Current rating (30 = 30 A)
- L = Low voltage drop
- Voltage rating (30 = 30 V)
- CT = Essential part number
Device code
62 43 5 7
STPS 30 L 30 CT PbFVS-
1
-Vishay Semiconductors product
-
PbF = Lead (Pb)-free and RoHS compliant
-N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free
Environmental digit
2
3
4
5
6
7
1
Document Number: 95222 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 08-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
TO-220AB
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters and inches
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1 and E do not include mold flash. Mold flash
shall not exceed 0.127 mm (0.005") per side. These dimensions
are measured at the outermost extremes of the plastic body
(4) Dimension b1, b3 and c1 apply to base metal only
(5) Controlling dimensions: inches
(6) Thermal pad contour optional within dimensions E, H1, D2 and
E1
(7) Dimensions E2 x H1 define a zone where stamping and
singulation irregularities are allowed
(8) Outline conforms to JEDEC TO-220, except A2 (maximum) and
D2 (minimum) where dimensions are derived from the actual
package outline
SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.25 4.65 0.167 0.183 E 10.11 10.51 0.398 0.414 3, 6
A1 1.14 1.40 0.045 0.055 E1 6.86 8.89 0.270 0.350 6
A2 2.56 2.92 0.101 0.115 E2 - 0.76 - 0.030 7
b 0.69 1.01 0.027 0.040 e 2.41 2.67 0.095 0.105
b1 0.38 0.97 0.015 0.038 4 e1 4.88 5.28 0.192 0.208
b2 1.20 1.73 0.047 0.068 H1 6.09 6.48 0.240 0.255 6, 7
b3 1.14 1.73 0.045 0.068 4 L 13.52 14.02 0.532 0.552
c 0.36 0.61 0.014 0.024 L1 3.32 3.82 0.131 0.150 2
c1 0.36 0.56 0.014 0.022 4 Ø P 3.54 3.73 0.139 0.147
D 14.85 15.25 0.585 0.600 3 Q 2.60 3.00 0.102 0.118
D1 8.38 9.02 0.330 0.355 90° to 93° 90° to 93°
D2 11.68 12.88 0.460 0.507 6
13
2
D
D1
H1
Q13
2
C
C
DD
3 x b23 x b
(b, b2)
b1, b3
(H1)
D2
Detail B
C
A
B
L
e1
Lead tip
E
E2
Ø P
0.014 AB
MM
0.015 AB
MM
Seating
plane
c
A2
A1
A
A
A
Lead assignments
Diodes
1. - Anode/open
2. - Cathode
3. - Anode
Conforms to JEDEC outline TO-220AB
(6)
(6)
(7)
(6)
(7)
e
2 x
L1 (2)
Detail B
Section C - C and D - D
View A - A
Base metal Plating
(4)
(4)
c1
c
(6)
Thermal pad
(E)
E1 (6)
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Revision: 12-Mar-12 1Document Number: 91000
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