PD - 97120 IRF8736PbF HEXFET(R) Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG l Lead -Free VDSS RDS(on) max Qg Typ. 30V 4.8m @VGS = 10V 17nC : A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 Top View Absolute Maximum Ratings Max. Units Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Parameter 30 20 V 14.4 IDM Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2.5 VDS VGS ID @ TA = 25C ID @ TA = 70C f f 18 c PD @TA = 25C Power Dissipation PD @TA = 70C Power Dissipation TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range A 144 W 1.6 W/C C 0.02 -55 to + 150 Thermal Resistance Parameter RJL RJA g Junction-to-Ambient fg Junction-to-Drain Lead Typ. Max. Units --- 20 C/W --- 50 Notes through are on page 9 www.irf.com 1 08/1/07 IRF8736PbF Static @ TJ = 25C (unless otherwise specified) Parameter BVDSS VDSS/TJ RDS(on) Min. Typ. Max. Units 30 --- --- Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance --- --- 0.022 3.9 --- 4.8 V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 18A Gate Threshold Voltage --- 1.35 5.5 1.8 6.8 2.35 VGS = 4.5V, ID = 14.4A VDS = VGS, ID = 50A IDSS Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current --- --- -6.1 --- --- 1.0 IGSS Gate-to-Source Forward Leakage --- --- --- --- 150 100 nA VDS = 24V, VGS = 0V, TJ = 125C VGS = 20V Gate-to-Source Reverse Leakage Forward Transconductance --- 52 --- --- -100 --- S VGS = -20V VDS = 15V, ID = 14.4A Total Gate Charge Pre-Vth Gate-to-Source Charge --- --- 17 4.4 26 --- Post-Vth Gate-to-Source Charge Gate-to-Drain Charge --- --- 1.9 5.8 --- --- Qgodr Qsw Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) --- --- 4.9 7.7 --- --- Qoss Output Charge --- 7.1 --- nC RG td(on) tr Gate Resistance Turn-On Delay Time Rise Time --- --- --- 1.3 12 15 2.2 --- --- td(off) tf Turn-Off Delay Time Fall Time --- --- 13 7.5 --- --- ns Ciss Coss Input Capacitance Output Capacitance --- --- 2315 449 --- --- Crss Reverse Transfer Capacitance --- 219 --- VGS(th) VGS(th) gfs Qg Qgs1 Qgs2 Qgd V Conditions Drain-to-Source Breakdown Voltage VGS = 0V, ID = 250A e V e mV/C A VDS = 24V, VGS = 0V VDS = 15V nC VGS = 4.5V ID = 14.4A See Fig. 16 VDS = 10V, VGS = 0V VDD = 15V, VGS = 4.5V ID = 14.4A pF e RG = 1.8 See Fig. 14 VGS = 0V VDS = 15V = 1.0MHz Avalanche Characteristics EAS Parameter Single Pulse Avalanche Energy IAR Avalanche Current c d Typ. --- Max. 126 Units mJ --- 14.4 A Diode Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current --- --- 3.1 ISM (Body Diode) Pulsed Source Current --- --- 144 VSD (Body Diode) Diode Forward Voltage --- --- 1.0 V p-n junction diode. TJ = 25C, IS = 14.4A, VGS = 0V trr Qrr Reverse Recovery Time Reverse Recovery Charge --- --- 16 19 24 29 ns nC TJ = 25C, IF = 14.4A, VDD = 10V di/dt = 300A/s ton Forward Turn-On Time 2 c MOSFET symbol A showing the integral reverse e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRF8736PbF 1000 1000 100 10 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V 1 0.1 0.01 2.3V BOTTOM 10 2.3V 1 60s PULSE WIDTH Tj = 150C 60s PULSE WIDTH Tj = 25C 0.001 0.1 0.1 1 10 100 0.1 1 10 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) 1000 ID, Drain-to-Source Current (A) 100 VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V 100 10 TJ = 150C 1 TJ = 25C 0.1 VDS = 15V 60s PULSE WIDTH 0.01 1.0 2.0 3.0 4.0 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 5.0 ID = 18A VGS = 10V 1.5 1.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF8736PbF 5 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) 10000 Coss = Cds + Cgd Ciss 1000 Coss Crss ID= 14.4A VDS= 24V VDS= 15V 4 3 2 1 0 100 1 10 0 100 4 16 20 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 1000 ID, Drain-to-Source Current (A) ISD , Reverse Drain Current (A) 12 Qg, Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) 100 TJ = 150C 10 TJ = 25C 1 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 100sec 1msec 10 10msec 1 VGS = 0V TA = 25C Tj = 150C Single Pulse 0.1 0.1 0.2 0.4 0.6 0.8 1.0 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 8 1.2 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF8736PbF 20 2.4 2.2 VGS(th) Gate threshold Voltage (V) ID , Drain Current (A) 16 12 8 4 2.0 ID = 50A 1.8 1.6 1.4 1.2 1.0 0 0.8 25 50 75 100 125 150 -75 -50 -25 TA, Ambient Temperature (C) Fig 9. Maximum Drain Current Vs. Ambient Temperature 0 25 50 75 100 125 150 TJ , Temperature ( C ) Fig 10. Threshold Voltage Vs. Temperature 100 Thermal Response ( ZthJA ) D = 0.50 10 0.20 0.10 0.05 R1 R1 0.02 1 J 0.01 J 1 R2 R2 R3 R3 R4 R4 a 1 2 2 3 3 4 4 Ci= i/Ri Ci i/Ri 0.1 Ri (C/W) (sec) 1.396574 0.000246 7.206851 0.037927 27.1278 1.0882 14.26877 30.3 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF8736PbF D.U.T RG 20V DRIVER L VDS + V - DD IAS A 0.01 tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS EAS, Single Pulse Avalanche Energy (mJ) 600 15V ID 1.28A 1.75A BOTTOM 14.4A 500 TOP 400 300 200 100 0 tp 25 50 75 100 125 150 Starting T J, Junction Temperature (C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS V DS Fig 12b. Unclamped Inductive Waveforms V GS D.U.T. RG Current Regulator Same Type as D.U.T. RD + -V DD V GS Pulse Width 1 s Duty Factor 0.1 % 50K 12V .2F Fig 14a. Switching Time Test Circuit .3F D.U.T. + V - DS VDS 90% VGS 3mA IG ID Current Sampling Resistors Fig 13. Gate Charge Test Circuit 6 10% VGS td(on) tr t d(off) tf Fig 14b. Switching Time Waveforms www.irf.com IRF8736PbF Driver Gate Drive D.U.T P.W. + + - - * D.U.T. ISD Waveform Reverse Recovery Current + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD P.W. Period VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - D= Period + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs Id Vds Vgs Vgs(th) Qgodr Qgd Qgs2 Qgs1 Fig 16. Gate Charge Waveform www.irf.com 7 IRF8736PbF SO-8 Package Outline Dimensions are shown in milimeters (inches) ' ' ,0 % $ + >@ ( ; $ $ E F ' ( H H + . / \ $ H H ;E >@ $ $ ,1& +( 6 0 ,1 0 $; %$6 ,& %$6 ,& 0 ,//,0 ( 7(5 6 0 ,1 0 $; % $6,& %$6 ,& .[ & \ >@ ;/ ;F & $ % )22735,17 127(6 ',0(16,21,1*72/(5$1&,1*3(5$60(<0 &21752//,1*',0(16,210,//,0(7(5 ',0(16,216$5(6+2:1,10,//,0(7(56>,1&+(6@ 287/,1(&21)250672-('(&287/,1(06$$ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ ',0(16,21,67+(/(1*7+2)/($')2562/'(5,1*72 $68%675$7( ;>@ >@ ;>@ ;>@ SO-8 Part Marking Information (;$03/(7+,6,6$1,5)026)(7 ,17(51$7,21$/ 5(&7,),(5 /2*2 ;;;; ) '$7(&2'(<:: 3 ',6*1$7(6/($')5(( 352'8&7237,21$/ < /$67',*,72)7+(<($5 :: :((. $ $66(0%/<6,7(&2'( /27&2'( 3$57180%(5 Note: For the most current drawing please refer to IR website at http://www.irf.com/package 8 www.irf.com IRF8736PbF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at http://www.irf.com/package Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 1.21mH, RG = 25, IAS = 14.4A. Pulse width 400s; duty cycle 2%. When mounted on 1 inch square copper board R is measured at TJ approximately 90C Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.8/2007 www.irf.com 9