Excelics EFA025AL
DATA SHEET High Gain GaAs Power FET
• +20.0dBm TYPICAL OUTPUT POWER
• 11.5dB TYPICAL POWER GAIN AT 12GHz
• 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
• Idss SORTED IN 5mA PER BIN RANGE
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT
P1dB Output Power at 1dB Compression f=12GHz
Vds=8V, Ids=50% Idss f=18GHz 17.0 20.0
20.0 dBm
G1dB Gain at 1dB Compression f=12GHz
Vds=8V, Ids=50% Idss f=18GHz 9.5 11.5
9.0 dB
PAE Power Added efficiency at 1dB Compression
Vds=8V, Ids=50% Idss f=12GHz
38 %
Idss Saturated Drain Current Vds=3V, Vgs=0V 20 45 65 mA
Gm Transconductance Vds=3V, Vgs=0V 30 50 mS
Vp Pinch-off Voltage Vds=3V, Ids=1.0mA -1.5 -2.5 V
BVgd Drain Breakdown Voltage Igd=1.0mA -12 -15 V
BVgs Source Breakdown Voltage Igs=1.0mA -7 -14 V
Rth Thermal Resistance (Au-Sn Eutectic Attach) 155 oC/W
MAXIMUM RATINGS AT 25OC
SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2
Vds Drain-Source Voltage 12V 8V
Vgs Gate-Source Voltage -8V -4V
Ids Dra i n Current Idss Idss
Igsf Forward Gate Current 6mA 1mA
Pin Input Power 19dBm @ 3dB Compression
Tch Channel Temperature 175oC 150oC
Tstg Storage Temperature -65/175oC -65/150oC
Pt Total Power Dissipation 880mW 730mW
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
Chip Thickness: 75 ± 13 microns
All Dimensions In Microns
50
48
50
40
59 78
104
420
260
90
DD
GGS
S
EFA025AL
DATA SHEET High Gain GaAs Power FET
S-PARAMETERS
8V, 1/2 Idss
FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 ---
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
1.0 0.990 -19.8 5.439 163.7 0.014 78.3 0.787 -7.4
2.0 0.970 -38.4 5.095 150.4 0.027 68.7 0.772 -14.1
3.0 0.927 -55.0 4.719 137.3 0.037 58.7 0.751 -20.6
4.0 0.895 -69.0 4.328 126.3 0.043 52.7 0.727 -26.3
5.0 0.862 -81.3 3.961 116.0 0.049 45.8 0.709 -32.1
6.0 0.838 -91.8 3.630 107.0 0.051 41.8 0.692 -37.1
7.0 0.815 -101.4 3.327 98.8 0.054 37.2 0.681 -42.0
8.0 0.802 -110.2 3.078 90.9 0.055 33.0 0.675 -46.6
9.0 0.779 -118.3 2.822 83.7 0.056 28.4 0.663 -51.0
10.0 0.769 -125.4 2.613 77.3 0.053 25.0 0.655 -54.8
11.0 0.765 -132.3 2.436 71.1 0.052 23.8 0.651 -58.5
12.0 0.764 -139.0 2.285 64.8 0.051 22.4 0.645 -62.0
13.0 0.769 -144.9 2.150 58.9 0.051 20.1 0.636 -65.3
14.0 0.771 -150.5 2.032 53.3 0.050 19.7 0.628 -69.1
15.0 0.779 -155.4 1.945 47.5 0.051 20.2 0.619 -73.7
16.0 0.781 -159.8 1.852 41.3 0.053 20.5 0.614 -79.6
17.0 0.786 -163.1 1.783 35.8 0.056 19.3 0.593 -86.9
18.0 0.793 -166.7 1.732 29.6 0.061 17.0 0.580 -95.4
19.0 0.794 -170.0 1.674 22.7 0.063 16.1 0.577 -105.2
20.0 0.786 -173.1 1.607 15.7 0.067 14.6 0.582 -116.6
21.0 0.773 -175.2 1.505 9.1 0.070 12.7 0.590 -128.3
22.0 0.762 -177.7 1.437 3.0 0.071 13.3 0.604 -138.3
23.0 0.763 -179.9 1.368 -2.4 0.076 16.5 0.637 -146.1
24.0 0.762 176.7 1.305 -8.5 0.083 16.6 0.678 -153.2
25.0 0.759 173.1 1.235 -14.3 0.088 16.8 0.703 -158.7
26.0 0.753 170.5 1.168 -18.0 0.092 17.9 0.721 -161.8
Note: The data included 0.7 mils diameter Au bonding wires:
2 gate wires, 15 mils each; 2 drain wires, 20 mils each; 4 source wires, 7 mils each.
