Transistors
1
Publication date: May 2003 SJC00048CED
2SB0710 (2SB710), 2SB0710A (2SB710A)
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SD0602 (2SD602), 2SD0602A (2SD602A)
■Features
•Large collector current IC
•Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing and the magazine packing
■Absolute Maximum Ratings Ta = 25°C
■Electrical Characteristics Ta = 25°C ± 3°C
0.40
+0.10
–0.05
(0.65) 1.50
+0.25
–0.05
2.8
+0.2
–0.3
2
1
3
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±0.2
5˚
10˚
0 to 0.1 1.1
+0.2
–0.1
1.1
+0.3
–0.1
Parameter Symbol Rating Unit
Collector-base voltage 2SB0710 VCBO −30 V
(Emitter open)
2SB0710A
−60
Collector-emitter voltage 2SB0710 VCEO −25 V
(Base open)
2SB0710A
−50
Emitter-base voltage (Collector open) VEBO −5V
Collector current IC− 0.5 A
Peak collector current ICP −1A
Collector power dissipation PC200 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Note) The part numbers in the parenthesis show conventional part number.
Unit: mm
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage 2SB0710 VCBO IC = −10 µA, IE = 0 −30 V
(Emitter open)
2SB0710A
−60
Collector-emitter voltage 2SB0710 VCEO IC = −10 mA, IB = 0 −25 V
(Base open)
2SB0710A
−50
Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −5V
Collector-base cutoff current (Emitter open)
ICBO VCB = −20 V, IE = 0 − 0.1 µA
Forward current transfer ratio *1hFE1 *2VCE = −10 V, IC = −150 mA 85 340
hFE2 VCE = −10 V, IC = −500 mA 40
Collector-emitter saturation voltage *1VCE(sat) IC = −300 mA, IB = −30 mA − 0.35 − 0.60 V
Base-emitter saturation voltage *1VBE(sat) IC = −300 mA, IB = −30 mA −1.1 −1.5 V
Transition frequency fTVCB = −10 V, IE = 50 mA, f = 200 MHz 200 MHz
Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz 6 15 pF
(Common base, input open circuited)
Marking Symbol:
• 2SB0710: C
• 2SB0710A: D
Rank Q R S No-rank
hFE1 85 to 170 120 to 240 170 to 340 85 to 340
Marking 2SB0710 CQ CR CS C
symbol 2SB0710A DQ DR DS D
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Product of no-rank is not
classified and have no
marking symbol for rank.
2SB0710, 2SB0710A
2SJC00048CED
VCE(sat) ICVBE(sat) IChFE IC
PC TaIC VCE IC IB
fT IECob VCB VCER RBE
0 16040 12080
0
240
200
160
120
80
40
Ambient temperature Ta (°C)
Collector power dissipation PC (mW)
0
0 –12–2 –10–4 –8–6
−1
200
−1
000
−800
−600
−400
−200
−9 mA
−8 mA
−7 mA
−6 mA
−5 mA
−4 mA
−3 mA
−2 mA
−1 mA
IB = −10 mA
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Ta = 25°C
0−10−8−6−4−2
0
−800
−700
−600
−500
−400
−300
−200
−100
Base current IB (mA)
Collector current IC (mA)
VCE = −10 V
Ta = 25°C
− 0.001
−1
− 0.01
− 0.1
−1
−10
−10 −100 −1
000
Collector-emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(mA)
I
C
/ I
B
= 10
25°C
−25°C
T
a
=75°C
−1
− 0.1
−1
−10
−100
−10 −100 −1
000
T
a
= −25°C
25°C
75°C
Base-emitter saturation voltage V
BE(sat)
(V)
Collector current I
C
(mA)
I
C
/ I
B
= 10
− 0.01
0
600
500
400
300
200
100
−1−10
Forward current transfer ratio h
FE
V
CE
= −10 V
− 0.01
− 0.1
Collector current I
C
(A)
T
a
= 75°C
25°C
−25°C
0
240
200
160
120
80
40
1 10 100
Transition frequency fT (MHz)
Emitter current I
E
(mA)
VCB = −10 V
Ta = 25°C
0
−1
24
20
16
12
8
4
−10 −100
Collector-base voltage VCB (V)
IE = 0
f = 1 MHz
Ta = 25°C
Collector output capacitance
(Common base, input open circuited) Cob (pF)
1 10 100 1
000
0
−120
−100
−80
−60
−40
−20
Base-emitter resistance RBE (kΩ)
IC = −2 mA
Ta = 25°C
2SB0710A
2SB0710
Collector-emitter voltage
(Resistor between B and E) VCER (V)
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-
tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
•Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
•Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL
