CTOR BY MPSA92/MPSA93_ T.29.03 PNP Small Signal High Voltage General Purpose Amplifiers FAIRCHILD Schlumberger Comp i @ BVceo ... -300 V (Min) (MPSA92), -200 V (Min) PACKAGE : (MPSOAQ3) MPSA92 TO-92 fire ... 40 (Min) @ 10 mA MPSA93 TO-92 | e e fr... 50 MHz (Min) Complements ... MPSA42, MPSA43 ABSOLUTE MAXIMUM RATINGS (Note 1) | Temperatures Storage Temperature ~55 C to 150C Operating Junction Temperature 150C Fower Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 0.625 W 25 C Case Temperature 1.0 W Voltages & Currents Ag2 Ag3 Vceo Collector to Emitter Voltage 300 V 200 V Veso Collector to Base Voltage 300 V 200 V Veso Emitter to Base Voltage 5.0 V -5.0V Ic Collector Current (Continuous) 500 mA 500 mA ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) Ag2 Ag93 SYMBOL | CHARACTERISTIC MIN MAX | MIN MAX } UNITS TEST CONDITIONS BVceo Collector to Emitter Breakdown! 300 200 Vv Io = 1.0 mA, ls =0 Voltage (Note 4) BVceo Collector to Base Breakdown | 300 200 Vv ic = 100 pA, le = 0 Voltage BVeno Emitter to Base Breakdown 5.0 5.0 V le = 10 pA, Ico = 0 Voltage Iczo Collector Cutoff Current 0.25 pA | Vos = 200 V, le = 0 0.25 pA Vor = 160 V, le = 0 leBo Emitter Cutoff Current 0.1 0.1 uA Ves = 3.0 V, lo =O hre DC Current Gain 25 25 Ic = 1.0 mA, Voce = -10 V i l 40 40 lo = 10 MA, Voce = -10V 25 30 150 lc = 30 MA, Vee = -10 V NOTES: +, These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 450C and (TO-92) junction-to-case thermal resistance of 125 C/W (derating factor of 8.0 mW/? G}; junction-to-ambient thermal resistance of 200 C/W (derating factor of 5.0 mW/ C). 4. Rating refers to a high current point where collector to emilter voltage is lowest. 5. Pulse conditions: tength = 300 us; duty cycle = 1%. 6. For product family characteristic curves, refer to Curve Set 1139. Swern ener aomiyoraNe Oem 3-123 a8FAIRCHILD SEMICONDUCTOR MPSA92/MPSAQS ay DE J469b74 OOerygy 1, TH a8 .&d ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) A92 A93 SYMBOL | CHARACTERISTIC MIN MAX [MIN MAX | UNITS TEST CONDITIONS Veetean Collector to Emitter Saturation. 0.5 -0.4 Vv Ic = 20 mA, ls = 2.0 MA Voltage \ Veetsat) Base to Ernitter Saturation -0.9 -0.9 Vv Io = 20 mA, Ip = 2.0 MA : Voltage fr Current Gain Bandwidth Product} 50 50 MHz | ic = 10 mA, Vce = -20V, f = 100 MHz Cob Collector to Base Capacitance 6.0 8.0 pF | Vca=-20V, le=0, f= 1.0MHzFAIRCHILD SEMICONDUCTOR B4 DE S44b74 OOe7405 FJ : MP SLO1/FTSOLOI PAIRCHILD MPSLSI/FTSOLS1 7-29-29 A Schlumberger Company NPN-PNP High Voltage Complementary Small Signal General Purpose Amplifiers Veceo ... 120 V (Min) (MPS/FTSOLO1), PACKAGE : ~100 V (Min) (MPS/FTSOLS51) MPSLO1 TO-92 : Veeman ... 0.30 V (Max) @ 50 mA MPSL61 TO-92 i 6 Complements ... MPS/FTSOLO1 (NPR), FTSOLO1 TO-236AA/AB | MPS/FTSOL51 (PNP) FTSOLS51 TO-236AA/AB : ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature -55C to 150C Operating Junction Temperature 150C Power Dissipation (Notes 2 & 3) Total Dissipation at MPS FTSO 25C Ambient Temperature 0,625 W 0.350 W* 70 C Ambient Temperature 0.400 W 25 C Case Temperature 1.0W Volfages & Currents L0i L51 Vceo Collector to Emitter Voltage 120 V 100V (Note 4) Veso Collector to Base Voltage 140 V 100 V Veso Emitter to Base Voitage 5.0V 4A0V le Collector Current 600 mA 600 mA ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) LO1 L51 TEST CONDITIONS (Reverse SYMBOL | CHARACTERISTIC MIN MAX | MIN MAX | UNITS | Voltage Polarity for PNP) : BVceo Collector to Emitter Breakdown| 120 100 V Ic = 1.0 mA, ls =0 | Voltage (Note 5) ; BVcgo Collector to Base Breakdown | 140 -100 Vv Ic = 100 pA, le = 0 Voltage BVeso Emitter to Base Breakdown 5.0 ~4.0 Vv le = 10 pA, Ie =O Voltage Ico Collector Cutoff Current 1.0 pA {| Vcp =75V, le =0 1.0 pA Vcs = 50 V, le =O lao Emitter Cutoff Current 100 nA | Ven = 4.0 V, Ilo = 0 100 nA Vea =3.0V, Ilo=0 NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 180C and (TO-92) junction-to-case thermal resistance of 125 CAV {derating factor of 8.0 mW/? GC); junction-to-ambient thermal resistance of 200 C/W (derating factor of 5,0 mW/*C); (TO-238) junction-to-ambient thermal resistance of 357C/W (erating factor of 2.8 mW/C). 4, Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 ys: duty cycle = 1%. 6. For product family characteristic curves, refer to Curve Set T147 for MPSLO1 & T232 for MPSL51. * Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm. 3-125 osIRCHILD SEMICONDUCTOR FA Soe TES MPSLOVETSOLOI 7-Aq.23 J4R9b74 OO274Ob NMPSL51/FTSOLS1 ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) Loi L514 TEST CONDITIONS (Reverse SYMBOL | CHARACTERISTIC MIN MAX | MIN MAX | UNITS | Voltage Polarity for PNP) Hre DC Current Gain (Note 5) 50 300 lo = 10 MA, Vez = 5.0 V 40 250 lc =50 mA, Voce = 5.0 V Veetsat Collector to Emitter Saturation 0.20 0.25 Vv lo =10 mA, ls = 1.0mMA Voltage (Note 5) 0.30 0.30 Vv lo = 50 MA, Ip = 5.0 MA Vagtsat Base to Emitter Saturation 12 -1.2 Vv Io = 10 MA, lp =1.0mMA Voltage (Note 5) 1.4 1.2 Vv ic = 50 mA, tp = 5.0 MA fr Current Gain Bandwidth Product} 60 60 MHz | lo =10 MA, Vee = 10 V, f = 100 MHz Cob Output Capacitance 8.0 8.0 pF Vce = 10 V, le =0, f = 1.0 MHz Nie Small Signal Current Gain 30 20 Ig = 1.0 mA, Vee = 10 V, f = 1.0 kHz 3-126 + yer y ee fontFAIRCHILD SEMICONDUCTOR ay DE 3469674 OO27408 4 3469674 FAIRCHILD SEMICONDUCTOR 84D 27408 D waza eM ~I2G A FAIRCHILD PE4020 T~ 95] > Ne . NPN Low Level Low Noise Amplifier A Schlumberger Company e fre ... 100 (Min) @ 10 vA, 150 (Min) @ 10mA PACKAGE Veeteau ... 0.2 V (Max) @ 10 mA/0.5 mA PE4020 TO-92 Icao ... 2.0nA (Max) @ 45 V, 50 nA (Max) @ 45 V, Ta = 65C se NF... 2.5 dB (Typ) @ 100 Hz; 1.0k0 ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature -55C to 150C Operating Junction Temperature 150C - Power Dissipation (Notes 2 & 3) Total Dissipation at 25C Ambient Temperature 0.625 W 25 C Case Temperature 1.0 W Voltages & Currents Vceo Collector to Emitter Voltage 60V (Note 4) Vcso Collector to Base Voltage 60V Veso Emitter to Base Voltage 8.0V Ie Collector Current (Continuous) 50 mA ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL | CHARACTERISTIC MIN }|MAX {| UNITS TEST CONDITIONS BVeso Emitter to Base Breakdown Voltage 8.0 Vv le = 10 pA, Ic =O BVces Collector to Emitter Breakdown Voltage |} 60 Vv ic = 10 pA, Is = 0 : ico Collector Cutoff Current 2.0 nA | Vca =45V, le =0 | 50 nA | Vos = 45 V, le = 0, Ta = 65C leno Emitter Cutoff Current 1.0 nA Ves = 5.0 V, lo =0 NOTES: 1. These ratings are timiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or Jow duty cycle operations. 8. These ratings give a maximum junction temperature of 150 Cand a maximum junction temperature of 125 Cand junction-to-case thermal resistance of 200 C/W (derating factor of 5.0 mW/ C): junction-to-ambient thermal resistance of 500 C/W (derating factor of 20 mW/C). 4, Rating refers to a high current point where collector to emitter voltage is lowest. . 5. Pulse conditions: length = 300 ps; duty cycle = 1%, 6. For product family characteristic curves, refer to Curve Set T107_ 3-128FAIRCHILD SEMICONDUCTOR G4 DE 3469674 O027409 O 3469674 FAIRCHILD SEMICONDUCTOR 84D 27408 D ms PE4020 T. DO ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) : SYMBOL | CHARACTERISTIC MIN |MAX | UNITS TEST CONDITIONS : i Hee DC Pulse Current Gain (Note 5) 150 | 950 Ic = 10 MA, Voce = 5.0 V | 5 hre DC Current Gain 135 Ic = 1.0 MA, Vor = 5.0 V 120 je = 100 pA, Vce = 5.0 V : 100 Io = 10 pA, Vce = 5.0 V 25 le = 10 pA, Vee = 5.0 V, Ta =-55C Nts High Frequency Current Gain 1.0 2.0 Io = 10 MA, Vce = 5.0 V, f = 100 MHz Veeotsuss | Collector to Emitter Sustaining 60 Vv lc = 5.0 mA, Ip =0 Voltage (Notes 4 & 5) Veeron Base to to Emitter On Voltage 0.7 Vv lc = 1.0 MA, Vee = 5.0 V Vcetsav Pulsed Collector to Emitter Saturation 0.3 Vv Ic = 50 mA, Ip = 5.0 mA Voltage (Note 5) 0.2 Vv lc = 10 mA, lp = 0.5 MA Cob Collector to Base Capacitance 4.0 pF Vce = 5.0 V, le =O Cob Emitter to Base Capacitance 6.0 pF Ves = 0.5 V, ic =0 NF Narrow Band Noise Figure 6.0 dB Io = 100 pA, Vcr = 5.0 V, f = 1.0 KHz Rs = 1.0 kO, BW = 400 Hz 3.0 dB Io = 10 wA, Vce = 5.0 V, f = 1.0 kHz Rs = 10 kf, BW = 400 Hz NF Wide Band Noise Figure 3.0 dB ic = 10 vA, Voce = 5.0 V, f =10 Hz to 10 kHz Rs = 10 k0, BW = 18.7 kHz 3-129 caFAIRCHILD SEMICONDUCTOR By DE 34b9674 OOer7410 7 3469674 FAIRCHILD SEMICONDUCTOR 84D 27410 D smmmm FAIRGHILE PE7058/PE7059 7. 29-23 A Schlumberger Company NPN High Voltage Video Output Voeo ... 220 V to 300 V (Min) @ 10 mA PACKAGE Gop... 4.0 pF (Max) @ 20 V PE7058 TO-92 e f;... 40 to 50 MHz (Min) PE7059 TO-92 hee ... Outstanding Beta Linearity to 100 mA ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature -65C to 160C . Operating Junction Temperature 150C Power Dissipation (Notes 2, 3 & 6) Total Dissipation at 25C Ambient Temperature 0.625 W 25C Case Temperature 1.0 W Voltages & Currents 7058 7059 BVceo Collector to Emitter Voltage 220 V 300 V (Note 4) BVcs0 Collector to Base Voltage 220 V 300 V BVeso Emitter to Base Voltage 7.0V 7.0V le Collector Current (Continuous) 500 mA 500 mA Io Collector Current (Pulsed) 2.0A 20A ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) PE7058 SYMBOL | CHARACTERISTIC MIN MAX | UNITS TEST CONDITIONS BVceo Collector to Emitter Breakdown 220 Vv le = 10 mA, lap = 0 Voltage (Note 5) BVepo Collector to Base Breakdown 220 Vv ic = 100 pA, le =O Voltage (Note 5) BVeso Emitter to Base Breakdown 7.0 Vv le = 10 pA, Ie =O Voltage (Note 5) lcpo Collector Cutoff Current (Note 5) 100 nA Ves = 200 V, le = 0 Ices Collector Reverse Current (Note 5) 100 nA Vce = 100 V, Vez = 0 leso Emitter Cutoff Current 100 nA | Ves =6.0V, Ic =O Nee DC Current Gain (Note 5) 20 lo = 1.0 MA, Vee = 20 V 40 le = 10 MA, Vce = 20 V 40 Ic = 30 MA, Vce = 20 V 15 lo = 150 mA, Vce = 20 V NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150C and (1092) junction-ta-case thermal resistance of 125 C/W (derating factor of 5.0 mW/* C}: junction-to-ambient thermal resistance of 200 G/W (derating factor of 5.0 mW/ C). 4, Rating refers to a high current point where collector to emitter voltage is lowest 5. Pulse conditions: length = 300 ys; duty cycle = 1%. 6. For product family characteristic curves, refer to Curve Set T176.- FAIRCHILD SEMICONDUCTOR 3469674 FAIRCHILD SEMICONDUCTOR Gy B4b9b74 OOl74h1 4 84D 27411 D coum PE7058/PE7059 7_ 44.9, ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) PE7058 SYMBOL | CHARACTERISTIC MIN MAX | UNITS TEST CONDITIONS Veksati Collector to Emitter Saturation 1.0 Vv lo = 20 mA, lp =2.0mMA Voltage (Note 5) Veetsat! Base to Emitter Saturation 0.65 | 0.85 Vv Ic = 20 mA, Ip = 2.0 mA Voltage (Note 5) fr High Frequency Current Gain 40 MHz | Ic = 30 MA, Vce = 10 V, f = 20 MHz 40 MHz le = 30 mA, Voce = 20 V, f = 20 MHz 40 MHz | lc =30 MA, Vce = 40 V, f = 20 MHz 40 MHz | Ic = 15 mA, Vce = 100 V, f = 20 MHz Cob Collector to Base Capacitance 4.0 pF Ves = 20 V, le = 0, f = 1.0 MHz Ceb Emitier to Base Capacitance 70 pF Ves = 0.5 V, Ic = 0, f = 1.0 MHz PE%059 SYMBOL | CHARACTERISTIC MIN | MAX | UNITS TEST CONDITIONS BVceo Collector to Emitter Breakdown 300 Vv Ic = 10 mA, ls =0 . Voltage (Note 5) BVcso Collector to Base Breakdown 300 Vv lc = 100 pA, le = 0 Voltage (Note 5) BVeno Emitter to Base Breakdown 7.0 Vv le = 10 pA, Ic = 0 Voltage (Note 5) lcso Collector Cutoff Current (Note 5) 100 nA ' | Vos = 200 V, le =0 lces Collector Reverse Current (Note 5) 100 nA Vce = 100 V, Vez = 0 lepo Emitter Cutoff Current 100 nA Vee = 6.0 V, le =O hee DC Current Gain (Note 5) 20 Io = 1.0 MA, Vee = 20 V 40 lo = 10 MA, Vce = 20 V 40 Ic = 30 MA, Voce = 20 V 10 Ic = 150 mA, Vce = 20 V Vcetsan Collector to Emitter Saturation 1.0 V Ic = 20 MA, ls = 2.0 mA Voltage (Note 5) Veetsat! Base to Emitter Saturation 0.65 | 0.85 Vv lc = 20 mA, Is = 2.0 MA Voltage (Note 5) fr High Frequency Current Gain 40 MHz | Ic = 30 MA, Vce = 10 V, f= 20 MHz 40 MHz | le =30 mA, Vce = 20V, f = 20 MHz 40 MHz [lo =380 mA, Vce = 40 V, f = 20 MHz 40 MHz | Ic = 15 mA, Vce = 100 V, f = 20 MHz Cov Coliector to Base Capacitance 4.0 pF Vea = 20 V, le = 0, f = 1.0 MHz Cen Emitter to Base Capacitance 70 pF Vea = 0.5 V, Ie = 0, f = 1.0 MHz Serr THE STI es eee ee FETIFE SFE Te 3-131