New Product SS10P3, SS10P4 Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES eSMP (R) Series * Very low profile - typical height of 1.1 mm * Ideal for automated placement K * Guardring for overvoltage protection * Low forward voltage drop, low power losses 1 * High efficiency * Low thermal resistance 2 * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C TO-277A (SMPC) K Cathode * AEC-Q101 qualified Anode 1 * Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Anode 2 * Halogen-free according to IEC 61249-2-21 definition PRIMARY CHARACTERISTICS IF(AV) 10 A VRRM 30 V, 40 V IFSM 280 A EAS 20 mJ VF at IF = 10 A 0.41 V TJ max. 150 C TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, DC/DC converters and polarity protection applications. MECHANICAL DATA Case: TO-277A (SMPC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS compliant, and automotive grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL Device marking code SS10P3 SS10P4 S103 S104 30 40 UNIT Maximum repetitive peak reverse voltage VRRM Maximum average forward rectified current (fig. 1) IF(AV) 10 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 280 A Non-repetitive avalanche energy at IAS = 2.0 A, TJ = 25 C EAS 20 mJ TJ, TSTG - 55 to + 150 C Operating junction and storage temperature range Document Number: 88983 Revision: 19-Apr-11 V For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SS10P3, SS10P4 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 5 A TA = 25 C IF = 10 A Instantaneous forward voltage VF (1) IF = 5 A TA = 25 C Rated VR Typical junction capacitance TA = 125 C 4.0 V, 1 MHz TYP. MAX. 0.41 - UNIT 0.48 0.56 0.31 - 0.41 0.49 100 800 A 50 100 mA 750 - A V TA = 125 C IF = 10 A Reverse current SYMBOL IR (2) CJ Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TA = 25 C unless otherwise specified) PARAMETER SYMBOL RJA Typical thermal resistance SS10P3 (1) SS10P4 UNIT 60 C/W RJL 3 Note (1) Units mounted on recommended PCB 1 oz. pad layout ORDERING INFORMATION (Example) PREFERRED P/N SS10P4-M3/86A SS10P4-M3/87A UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.10 86A 1500 7" diameter plastic tape and reel 0.10 87A 6500 13" diameter plastic tape and reel SS10P4HM3/86A (1) 0.10 86A 1500 7" diameter plastic tape and reel SS10P4HM3/87A (1) 0.10 87A 6500 13" diameter plastic tape and reel Note Automotive grade (1) www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number: 88983 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 19-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SS10P3, SS10P4 Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 1000 Instantaneous Reverse Current (mA) 12 Average Forward Current (A) Resistive or Inductive Load 10 8 6 4 TL measured at the Cathode Band Terminal 2 25 50 75 100 125 150 10 TA = 125 C 1 0.1 TA = 25 C 0.01 0.001 10 0 0 TA = 150 C 100 175 20 30 40 50 60 90 100 Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Reverse Leakage Characteristics 10 000 TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p 5 D = 0.3 D = 0.5 4 D = 1.0 D = 0.2 3 D = 0.1 T 2 1 D = tp/T Junction Capacitance (pF) D = 0.8 Average Power Loss (W) 80 Percent of Rated Peak Reverse Voltage (%) 6 1000 tp 0 100 0 2 4 6 8 10 12 0.1 1 10 100 Average Forward Current (A) Reverse Voltage (V) Fig. 2 - Forward Power Loss Characteristics Fig. 5 - Typical Junction Capacitance 100 Transient Thermal Impedance (C/W) 100 Instantaneous Forward Current (A) 70 Lead Temperature (C) TA = 150 C TA = 125 C 10 1 TA = 25 C 0.1 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Junction to Ambient 10 1 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Transient Thermal Impedance Document Number: 88983 Revision: 19-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SS10P3, SS10P4 Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-277A (SMPC) 0.187 (4.75) 0.175 (4.45) 0.016 (0.40) 0.006 (0.15) K 0.262 (6.65) 0.250 (6.35) 0.242 (6.15) 0.238 (6.05) 2 1 0.047 (1.20) 0.039 (1.00) 0.171 (4.35) 0.167 (4.25) 0.146 (3.70) 0.134 (3.40) Mounting Pad Layout 0.087 (2.20) 0.075 (1.90) 0.189 (4.80) MIN. 0.189 (4.80) 0.173 (4.40) 0.186 (4.72) MIN. 0.268 (6.80) 0.155 (3.94) NOM. 0.030 (0.75) NOM. 0.049 (1.24) 0.037 (0.94) 0.050 (1.27) MIN. 0.084 (2.13) NOM. 0.053 (1.35) 0.041 (1.05) 0.041 (1.04) 0.055 (1.40) MIN. Conform to JEDEC TO-277A www.vishay.com 4 For technical questions within your region, please contact one of the following: Document Number: 88983 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 19-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000