HSMS-282E-BLKG - Agilent / Hewlett-Packard

Surface Mount RF Schottky

Barrier Diodes

Technical Data

HSMS-282x Series

Features

• Low Turn-On Voltage

(As Low as 0.34 V at 1 mA)

• Low FIT (Failure in Time)

Rate*

• Six-sigma Quality Level

• Single, Dual and Quad

Versions

• Unique Configurations in

Surface Mount SOT-363

Package

– increase flexibility

– save board space

– reduce cost

• HSMS-282K Grounded

Center Leads Provide up to

10 dB Higher Isolation

• Matched Diodes for

Consistent Performance

• Better Thermal Conductivity

for Higher Power Dissipation

• Lead-free Option Available

* For more information see the

Surface Mount Schottky

Reliability Data Sheet.

Description/Applications

These Schottky diodes are

specifically designed for both

analog and digital applications.

This series offers a wide range of

specifications and package

configurations to give the

designer wide flexibility. Typical

applications of these Schottky

diodes are mixing, detecting,

switching, sampling, clamping,

Package Lead Code Identification, SOT-23/SOT-143

(Top View)

COMMON

CATHODE

UNCONNECTED

PAIR

COMMON

ANODE

SERIES

SINGLE

RING

QUAD

BRIDGE

QUAD

CROSS-OVER

QUAD

Package Lead Code Iden-

tification, SOT-323

(Top View)

Package Lead Code Iden-

tification, SOT-363

(Top View)

COMMON

CATHODE

COMMON

ANODE

SERIES

SINGLE

COMMON

CATHODE QUAD

UNCONNECTED

TRIO

BRIDGE

QUAD

COMMON

ANODE QUAD

RING

QUAD

123

654

HIGH ISOLATION

UNCONNECTED PAIR

123

654

123

654

123

654

123

654

123

654

and wave shaping. The

HSMS-282x series of diodes is the

best all-around choice for most

applications, featuring low series

resistance, low forward voltage at

all current levels and good RF

characteristics.

Note that Agilent’s manufacturing

techniques assure that dice found

in pairs and quads are taken from

adjacent sites on the wafer,

assuring the highest degree of

match.

Electrical Specifications TC = 25°C, Single Diode[4]

Maximum Maximum

Minimum Maximum Forward Reverse Typical

Part Package Breakdown Forward Voltage Leakage Maximum Dynamic

Number Marking Lead Voltage Voltage VF (V) @ IR (nA) @ Capacitance Resistance

HSMS[5] Code Code Configuration VBR (V) VF (mV) IF (mA) VR (V) CT (pF) RD (ΩΩ

ΩΩ

Ω)[6]

2820 C0[3] 0 Single 15 340 0.5 10 100 1 1.0 12

2822 C2[3] 2 Series

2823 C3[3] 3 Common Anode

2824 C4[3] 4 Common Cathode

2825 C5[3] 5 Unconnected Pair

2827 C7[3] 7 Ring Quad[5]

2828 C8[3] 8 Bridge Quad[5]

2829 C9[3] 9 Cross-over Quad

282B C0[7] B Single

282C C2[7] C Series

282E C3[7] E Common Anode

282F C4[7] F Common Cathode

282K CK[7] K High Isolation

Unconnected Pair

282L CL[7] L Unconnected Trio

282M HH[7] M Common Cathode Quad

282N NN[7] N Common Anode Quad

282P CP[7] P Bridge Quad

282R OO[7] R Ring Quad

Test Conditions IR = 100 µAI

F = 1 mA[1] VF = 0 V IF = 5 mA

f = 1 MHz[2]

Notes:

1. ∆VF for diodes in pairs and quads in 15 mV maximum at 1 mA.

2. ∆CTO for diodes in pairs and quads is 0.2 pF maximum.

3. Package marking code is in white.

4. Effective Carrier Lifetime (τ) for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA.

5. See section titled “Quad Capacitance.”

6. RD = RS + 5.2 Ω at 25°C and If = 5 mA.

7. Package marking code is laser marked.

Absolute Maximum Ratings[1] TC = 25°C

Symbol Parameter Unit SOT-23/SOT-143 SOT-323/SOT-363

IfForward Current (1 µs Pulse) Amp 1 1

PIV Peak Inverse Voltage V 15 15

TjJunction Temperature °C 150 150

Tstg Storage Temperature °C -65 to 150 -65 to 150

θjc Thermal Resistance[2] °C/W 500 150

Notes:

1. Operation in excess of any one of these conditions may result in permanent damage to

the device.

2. TC = +25°C, where TC is defined to be the temperature at the package pins where

contact is made to the circuit board.

Notes:

1. Package marking provides

orientation and identification.

2. See “Electrical Specifications” for

appropriate package marking.

Pin Connections and

Package Marking

GUx

Quad Capacitance

Capacitance of Schottky diode

quads is measured using an

HP4271 LCR meter. This

instrument effectively isolates

individual diode branches from

the others, allowing accurate

capacitance measurement of each

branch or each diode. The

conditions are: 20 mV R.M.S.

voltage at 1 MHz. Agilent defines

this measurement as “CM”, and it

is equivalent to the capacitance of

the diode by itself. The equivalent

diagonal and adjacent capaci-

tances can then be calculated by

the formulas given below.

In a quad, the diagonal capaci-

tance is the capacitance between

points A and B as shown in the

figure below. The diagonal

capacitance is calculated using

the following formula

C1 x C2 C3 x C4

CDIAGONAL = _______ + _______

C1 + C2 C3 + C4

The equivalent adjacent

capacitance is the capacitance

between points A and C in the

figure below. This capacitance is

calculated using the following

formula

CADJACENT = C1 + ____________

1 1 1

–– + –– + ––

C2 C3C4

This information does not apply

to cross-over quad diodes.

SPICE Parameters

Parameter Units HSMS-282x

BVV15

CJ0 pF 0.7

EGeV 0.69

IBV A1E-4

ISA 2.2E - 8

N 1.08

RSΩ6.0

PBV 0.65

PT2

M 0.5

Rj = 8.33 X 10-5 nT

Ib + Is

where

Ib = externally applied bias current in amps

Is = saturation current (see table of SPICE parameters)

T = temperature, °K

n = ideality factor (see table of SPICE parameters)

Note:

To effectively model the packaged HSMS-282x product,

please refer to Application Note AN1124.

RS = series resistance (see Table of SPICE parameters)

Cj = junction capacitance (see Table of SPICE parameters)

Linear Equivalent Circuit Model

Diode Chip

ESD WARNING:

Handling Precautions Should Be Taken To Avoid Static Discharge.

Typical Performance, T

C = 25°C (unless otherwise noted), Single Diode

Figure 1. Forward Current vs.

Forward Voltage at Temperatures.

0 0.10 0.20 0.30 0.500.40

IF – FORWARD CURRENT (mA)

VF – FORWARD VOLTAGE (V)

0.01

0.1

100 T

= +125°C

= +75°C

= +25°C

= –25°C

Figure 2. Reverse Current vs.

Reverse Voltage at Temperatures.

05 15

IR – REVERSE CURRENT (nA)

VR – REVERSE VOLTAGE (V)

1000

100

100,000

10,000

= +125°C

= +75°C

= +25°C

Figure 3. Total Capacitance vs.

Reverse Voltage.

02 86

CT – CAPACITANCE (pF)

VR – REVERSE VOLTAGE (V)

0.6

0.4

0.2

0.8

Figure 4. Dynamic Resistance vs.

Forward Current.

0.1 1 100

RD – DYNAMIC RESISTANCE (Ω)

IF – FORWARD CURRENT (mA)

1000

100

VF - FORWARD VOLTAGE (V)

Figure 5. Typical V

Match, Series Pairs

and Quads at Mixer Bias Levels.

0.3

IF - FORWARD CURRENT (mA)

∆V

- FORWARD VOLTAGE DIFFERENCE (mV)

0.2 0.4 0.6 0.8 1.0 1.2 1.4

IF (Left Scale)

∆VF (Right Scale)

VF - FORWARD VOLTAGE (V)

Figure 6. Typical V

Match, Series Pairs

at Detector Bias Levels.

100

1.0

0.1

IF - FORWARD CURRENT (µA)

∆V

- FORWARD VOLTAGE DIFFERENCE (mV)

0.10 0.15 0.20 0.25

IF (Left Scale)

∆VF (Right Scale)

Figure 7. Typical Output Voltage vs.

Input Power, Small Signal Detector

Operating at 850 MHz.

-40 -30

18 nH

RF in

3.3 nH

100 pF 100 KΩ

HSMS-282B Vo

VO – OUTPUT VOLTAGE (V)

Pin – INPUT POWER (dBm)

-10-20

0.001

0.01

0.1

-25°C

+25°C

+75°C

DC bias = 3 µA

Figure 8. Typical Output Voltage vs.

Input Power, Large Signal Detector

Operating at 915 MHz.

-20 -10

RF in

100 pF 4.7 KΩ

68 Ω

HSMS-282B Vo

VO – OUTPUT VOLTAGE (V)

Pin – INPUT POWER (dBm)

10 200

1E-005

0.0001

0.001

0.1

0.01

+25°C

LOCAL OSCILLATOR POWER (dBm)

Figure 9. Typical Conversion Loss vs.

L.O. Drive, 2.0 GHz (Ref AN997).

CONVERSION LOSS (dB)

2068104

Applications Information

Product Selection

Agilent’s family of surface mount

Schottky diodes provide unique

solutions to many design prob-

lems. Each is optimized for

certain applications.

The first step in choosing the right

product is to select the diode type.

All of the products in the

HSMS-282x family use the same

diode chip–they differ only in

package configuration. The same

is true of the HSMS-280x, -281x,

285x, -286x and -270x families.

Each family has a different set of

characteristics, which can be

compared most easily by consult-

ing the SPICE parameters given

on each data sheet.

The HSMS-282x family has been

optimized for use in RF applica-

tions, such as

✓DC biased small signal

detectors to 1.5 GHz.

✓Biased or unbiased large

signal detectors (AGC or

power monitors) to 4 GHz.

✓Mixers and frequency

multipliers to 6 GHz.

The other feature of the

HSMS-282x family is its

unit-to-unit and lot-to-lot consis-

tency. The silicon chip used in this

series has been designed to use

the fewest possible processing

steps to minimize variations in

diode characteristics. Statistical

data on the consistency of this

product, in terms of SPICE

parameters, is available from

Agilent.

For those applications requiring

very high breakdown voltage, use

the HSMS-280x family of diodes.

Turn to the HSMS-281x when you

need very low flicker noise. The

HSMS-285x is a family of zero bias

detector diodes for small signal

applications. For high frequency

detector or mixer applications,

use the HSMS-286x family. The

HSMS-270x is a series of specialty

diodes for ultra high speed

clipping and clamping in digital

circuits.

Schottky Barrier Diode Char-

acteristics

Stripped of its package, a

Schottky barrier diode chip

consists of a metal-semiconductor

barrier formed by deposition of a

metal layer on a semiconductor.

The most common of several

different types, the passivated

diode, is shown in Figure 10,

along with its equivalent circuit.

RS is the parasitic series resis-

tance of the diode, the sum of the

bondwire and leadframe resis-

tance, the resistance of the bulk

layer of silicon, etc. RF energy

coupled into RS is lost as heat—it

does not contribute to the recti-

fied output of the diode. CJ is

parasitic junction capacitance of

the diode, controlled by the thick-

ness of the epitaxial layer and the

diameter of the Schottky contact.

Rj is the junction resistance of the

diode, a function of the total

current flowing through it.

;;

METAL

SCHOTTKY JUNCTION

PASSIVATION PASSIVATION

N-TYPE OR P-TYPE EPI LAYER

N-TYPE OR P-TYPE SILICON SUBSTRATE

CROSS-SECTION OF SCHOTTKY

BARRIER DIODE CHIP

EQUIVALENT

CIRCUIT

8.33 X 10-5 nT

Rj = –––––––––––– = RV – Rs

IS + Ib

0.026

≈ ––––– at 25°C

IS + Ib

where

n = ideality factor (see table of

SPICE parameters)

T = temperature in °K

IS = saturation current (see

table of SPICE parameters)

Ib = externally applied bias

current in amps

Rv = sum of junction and series

resistance, the slope of the

V-I curve

IS is a function of diode barrier

height, and can range from

picoamps for high barrier diodes

to as much as 5 µA for very low

barrier diodes.

The Height of the Schottky

Barrier

The current-voltage characteristic

of a Schottky barrier diode at

room temperature is described by

the following equation:

V - IRS

I = IS (e –––––– 1)

0.026

On a semi-log plot (as shown in

the Agilent catalog) the current

graph will be a straight line with

inverse slope 2.3 X 0.026 = 0.060

volts per cycle (until the effect of

Figure 10. Schottky Diode Chip.

RS is seen in a curve that droops

at high current). All Schottky

diode curves have the same slope,

but not necessarily the same

value of current for a given

voltage. This is determined by the

saturation current, IS, and is

related to the barrier height of the

diode.

Through the choice of p-type or

n-type silicon, and the selection

of metal, one can tailor the

characteristics of a Schottky

diode. Barrier height will be

altered, and at the same time CJ

and RS will be changed. In

general, very low barrier height

diodes (with high values of IS,

suitable for zero bias applica-

tions) are realized on p-type

silicon. Such diodes suffer from

higher values of RS than do the

n-type. Thus, p-type diodes are

generally reserved for detector

applications (where very high

values of RV swamp out high RS)

and n-type diodes such as the

HSMS-282x are used for mixer

applications (where high L.O.

drive levels keep RV low). DC

biased detectors and self-biased

detectors used in gain or power

control circuits.

Detector Applications

Detector circuits can be divided

into two types, large signal

(Pin > -20 dBm) and small signal

(Pin < -20 dBm). In general, the

former use resistive impedance

matching at the input to improve

flatness over frequency —this is

possible since the input signal

levels are high enough to produce

adequate output voltages without

the need for a high Q reactive

input matching network. These

circuits are self-biased (no

external DC bias) and are used

for gain and power control of

amplifiers.

Small signal detectors are used as

very low cost receivers, and

require a reactive input imped-

ance matching network to

achieve adequate sensitivity and

output voltage. Those operating

with zero bias utilize the HSMS-

285x family of detector diodes.

However, superior performance

over temperature can be achieved

with the use of 3 to 30 µA of DC

bias. Such circuits will use the

HSMS-282x family of diodes if the

operating frequency is 1.5 GHz or

lower.

Typical performance of single

diode detectors (using

HSMS-2820 or HSMS-282B) can

be seen in the transfer curves

given in Figures 7 and 8. Such

detectors can be realized either

as series or shunt circuits, as

shown in Figure 11.

DC Bias

Shunt inductor provides

video signal return

Shunt diode provides

video signal return

DC Bias

DC Biased DiodesZero Biased Diodes

Figure 11. Single Diode Detec-

tors.

The series and shunt circuits can

be combined into a voltage

doubler[1], as shown in Figure 12.

The doubler offers three advan-

tages over the single diode

circuit.

✓The two diodes are in parallel

in the RF circuit, lowering the

input impedance and making

the design of the RF matching

network easier.

✓The two diodes are in series

in the output (video) circuit,

doubling the output voltage.

✓Some cancellation of

even-order harmonics takes

place at the input.

DC Bias

DC Biased DiodesZero Biased Diodes

Figure 12. Voltage Doubler.

The most compact and lowest

cost form of the doubler is

achieved when the HSMS-2822 or

HSMS-282C series pair is used.

Both the detection sensitivity and

the DC forward voltage of a

biased Schottky detector are

temperature sensitive. Where

both must be compensated over a

wide range of temperatures, the

differential detector[2] is often

used. Such a circuit requires that

the detector diode and the

reference diode exhibit identical

characteristics at all DC bias

levels and at all temperatures.

This is accomplished through the

use of two diodes in one package,

for example the HSMS-2825 in

Figure 13. In the Agilent assembly

facility, the two dice in a surface

mount package are taken from

adjacent sites on the wafer (as

illustrated in Figure 14). This

[1] Agilent Application Note 956-4, “Schottky Diode Voltage Doubler.”

[2] Raymond W. Waugh, “Designing Large-Signal Detectors for Handsets and Base

Stations,” Wireless Systems Design, Vol. 2, No. 7, July 1997, pp 42 – 48.

assures that the characteristics of

the two diodes are more highly

matched than would be possible

through individual testing and

hand matching.

matching

network

differential

amplifier

HSMS-2825

bias

Figure 13. Differential Detector.

Figure 14. Fabrication of Agilent

Diode Pairs.

In high power applications,

coupling of RF energy from the

detector diode to the reference

diode can introduce error in the

differential detector. The

HSMS-282K diode pair, in the six

lead SOT-363 package, has a

copper bar between the diodes

that adds 10 dB of additional

isolation between them. As this

part is manufactured in the

SOT-363 package it also provides

the benefit of being 40% smaller

than larger SOT-143 devices. The

HSMS-282K is illustrated in

Figure 15 —note that the ground

connections must be made as

close to the package as possible

to minimize stray inductance to

ground.

detector diode

reference diode

to differential amplifier

bias

HSMS-282K

Figure 15. High Power Differen-

tial Detector.

The concept of the voltage

doubler can be applied to the

differential detector, permitting

twice the output voltage for a

given input power (as well as

improving input impedance and

suppressing second harmonics).

However, care must be taken to

assure that the two reference

diodes closely match the two

detector diodes. One possible

configuration is given in Fig-

ure 16, using two HSMS-2825.

Board space can be saved

through the use of the HSMS-282P

open bridge quad, as shown in

Figure 17.

matching

network

differential

amplifier

HSMS-2825

bias

Figure 16. Voltage Doubler

Differential Detector.

differential

amplifier

HSMS-282P

bias

matching

network

Figure 17. Voltage Doubler

Differential Detector.

While the differential detector

works well over temperature,

another design approach[3] works

well for large signal detectors.

See Figure 18 for the schematic

and a physical layout of the

circuit. In this design, the two

4.7 KΩ resistors and diode D2 act

as a variable power divider,

assuring constant output voltage

over temperature and improving

output linearity.

33 pF

HSMS-2825

HSMS-282K

4.7 KΩ

33 pF

4.7 KΩ

68 Ω

Figure 18. Temperature Compen-

sated Detector.

In certain applications, such as a

dual-band cellphone handset

operating at both 900 and

1800 MHz, the second harmonics

generated in the power control

output detector when the handset

is working at 900 MHz can cause

problems. A filter at the output

can reduce unwanted emissions

at 1800 MHz in this case, but a

[3] Hans Eriksson and Raymond W. Waugh, “A Temperature Compensated Linear Diode

Detector,” to be published.

lower cost solution is available[4].

Illustrated schematically in

Figure 19, this circuit uses diode

D2 and its associated passive

components to cancel all even

order harmonics at the detector’s

RF input. Diodes D3 and D4

provide temperature compensa-

tion as described above. All four

diodes are contained in a single

HSMS- 282R package, as illus-

trated in the layout shown in

Figure 20.

RF in D1 R1 V+

C1V–

C1 = C2 ≈ 100 pF

R1 = R2 = R3 = R4 = 4.7 KΩ

D1 & D2 & D3 & D4 = HSMS-282R

68 ΩR3

Figure 19. Schematic of Sup-

pressed Harmonic Detector.

HSMS-282R

4.7 KΩ4.7 KΩ

100 pF

68 Ω

V–

RF in

V+

Figure 20. Layout of Suppressed

Harmonic Detector.

Note that the forgoing discussion

refers to the output voltage being

extracted at point V+ with

respect to ground. If a differential

output is taken at V+ with respect

to V-, the circuit acts as a voltage

doubler.

Mixer applications

The HSMS-282x family, with its

wide variety of packaging, can be

used to make excellent mixers at

frequencies up to 6 GHz.

The HSMS-2827 ring quad of

matched diodes (in the SOT-143

package) has been designed for

double balanced mixers. The

smaller (SOT-363) HSMS-282R ring

quad can similarly be used, if the

quad is closed with external

connections as shown in Figure 21.

HSMS-282R

IF out

RF in

LO in

Figure 21. Double Balanced

Mixer.

Both of these networks require a

crossover or a three dimensional

circuit. A planar mixer can be

made using the SOT-143 cross-

over quad, HSMS-2829, as shown

in Figure 22. In this product, a

special lead frame permits the

crossover to be placed inside the

plastic package itself, eliminating

the need for via holes (or other

measures) in the RF portion of

the circuit itself.

HSMS-2829

IF out

RF in

LO in

Figure 22. Planar Double Bal-

anced Mixer.

A review of Figure 21 may lead to

the question as to why the

HSMS-282R ring quad is open on

the ends. Distortion in double

balanced mixers can be reduced

if LO drive is increased, up to the

point where the Schottky diodes

are driven into saturation. Above

this point, increased LO drive will

not result in improvements in

distortion. The use of expensive

high barrier diodes (such as those

fabricated on GaAs) can take

advantage of higher LO drive

power, but a lower cost solution

is to use a eight (or twelve) diode

ring quad. The open design of the

HSMS-282R permits this to easily

be done, as shown in Figure 23.

HSMS-282R IF out

RF in

LO in

Figure 23. Low Distortion Double

Balanced Mixer.

This same technique can be used

in the single-balanced mixer.

Figure 24 shows such a mixer,

with two diodes in each spot

normally occupied by one. This

mixer, with a sufficiently high LO

drive level, will display low

distortion.

HSMS-282R

180°

hybrid IF out

LO in

RF in

Low pass

filter

Figure 24. Low Distortion Bal-

anced Mixer.

[4] Alan Rixon and Raymond W. Waugh, “A Suppressed Harmonic Power Detector for Dual

Band ‘Phones,” to be published.

Sampling Applications

The six lead HSMS-282P can be

used in a sampling circuit, as

shown in Figure 25. As was the

case with the six lead HSMS-282R

in the mixer, the open bridge

quad is closed with traces on the

circuit board. The quad was not

closed internally so that it could

be used in other applications,

such as illustrated in Figure 17.

HSMS-282P

sampling

pulse

sample

point

sampling circuit

Figure 25. Sampling Circuit.

Thermal Considerations

The obvious advantage of the

SOT-323 and SOT-363 over the

SOT-23 and SOT-142 is combina-

tion of smaller size and extra

leads. However, the copper

leadframe in the SOT-3x3 has a

thermal conductivity four times

higher than the Alloy 42

leadframe of the SOT-23 and

SOT-143, which enables the

smaller packages to dissipate

more power.

The maximum junction tempera-

ture for these three families of

Schottky diodes is 150°C under

all operating conditions. The

following equation applies to the

thermal analysis of diodes:

Tj = (Vf If + PRF) θjc + Ta (1)

where

Tj = junction temperature

Ta = diode case temperature

θjc = thermal resistance

VfIf = DC power dissipated

PRF = RF power dissipated

Note that θjc, the thermal resis-

tance from diode junction to the

foot of the leads, is the sum of

two component resistances,

θjc = θpkg + θchip (2)

Package thermal resistance for

the SOT-3x3 package is approxi-

mately 100°C/W, and the chip

thermal resistance for the

HSMS-282x family of diodes is

approximately 40°C/W. The

designer will have to add in the

thermal resistance from diode

case to ambient —a poor choice

of circuit board material or heat

sink design can make this number

very high.

Equation (1) would be straightfor-

ward to solve but for the fact that

diode forward voltage is a func-

tion of temperature as well as

forward current. The equation for

Vf is:

11600 (Vf – If Rs)

nT (3)

If = IS e – 1

where n = ideality factor

T = temperature in °K

Rs = diode series resistance

and IS (diode saturation current)

is given by

2 1 1

n – 4060 ( T – 298)

Is = I0 ( T ) e

298 (4)

Equation (4) is substituted into

equation (3), and equations (1)

and (3) are solved simultaneously

to obtain the value of junction

temperature for given values of

diode case temperature, DC

power dissipation and RF power

dissipation.

Diode Burnout

Any Schottky junction, be it an RF

diode or the gate of a MESFET, is

relatively delicate and can be

burned out with excessive RF

power. Many crystal video

receivers used in RFID (tag)

applications find themselves in

poorly controlled environments

where high power sources may be

present. Examples are the areas

around airport and FAA radars,

nearby ham radio operators, the

vicinity of a broadcast band

transmitter, etc. In such

environments, the Schottky

diodes of the receiver can be

protected by a device known as a

limiter diode.[5] Formerly

available only in radar warning

receivers and other high cost

electronic warfare applications,

these diodes have been adapted to

commercial and consumer

circuits.

Agilent offers a complete line of

surface mountable PIN limiter

diodes. Most notably, our HSMP-

4820 (SOT-23) can act as a very

fast (nanosecond) power-sensitive

switch when placed between the

antenna and the Schottky diode,

shorting out the RF circuit

temporarily and reflecting the

excessive RF energy back out the

antenna.

[5] Agilent Application Note 1050, “Low

Cost, Surface Mount Power Limiters.”

Assembly Instructions

SOT-3x3 PCB Footprint

Recommended PCB pad layouts

for the miniature SOT-3x3 (SC-70)

packages are shown in Figures 26

and 27 (dimensions are in inches).

These layouts provide ample

allowance for package placement

by automated assembly equipment

without adding parasitics that

could impair the performance.

0.026

0.035

0.07

0.016

Figure 26. PCB Pad Layout, SOT-323

(dimensions in inches).

0.026

0.075

0.016

0.035

Figure 27. PCB Pad Layout, SOT-363

(dimensions in inches).

Figure 28. Surface Mount Assembly Profile.

SMT Assembly

Reliable assembly of surface

mount components is a complex

process that involves many

material, process, and equipment

factors, including: method of

heating (e.g., IR or vapor phase

reflow, wave soldering, etc.)

circuit board material, conductor

thickness and pattern, type of

solder alloy, and the thermal

conductivity and thermal mass of

components. Components with a

low mass, such as the SOT

packages, will reach solder reflow

temperatures faster than those

with a greater mass.

Agilent’s diodes have been

qualified to the time-temperature

profile shown in Figure 28. This

profile is representative of an IR

reflow type of surface mount

assembly process.

After ramping up from room

temperature, the circuit board

with components attached to it

(held in place with solder paste)

passes through one or more

preheat zones. The preheat zones

increase the temperature of the

board and components to prevent

thermal shock and begin evaporat-

ing solvents from the solder paste.

The reflow zone briefly elevates

the temperature sufficiently to

produce a reflow of the solder.

The rates of change of tempera-

ture for the ramp-up and cool-

down zones are chosen to be low

enough to not cause deformation

of the board or damage to compo-

nents due to thermal shock. The

maximum temperature in the

reflow zone (TMAX) should not

exceed 235°C.

These parameters are typical for a

surface mount assembly process

for Agilent diodes. As a general

guideline, the circuit board and

components should be exposed

only to the minimum tempera-

tures and times necessary to

achieve a uniform reflow of

solder.

TIME (seconds)

MAX

TEMPERATURE (°C)

100

150

200

250

Preheat

Zone Cool Down

Zone

Reflow

Zone

120 180 240 300

Package Dimensions

Part Number Ordering Information

No. of

Part Number Devices Container

HSMS-282x-TR2* 10000 13" Reel

HSMS-282x-TR1* 3000 7" Reel

HSMS-282x-BLK * 100 antistatic bag

x = 0, 2, 3, 4, 5, 7, 8, 9, B, C, E, F, K, L, M, N, P or R

For lead-free option, the part number will have the

character "G" at the end, eg. HSMS-282x-TR2G for a

10,000 lead-free reel.

Outline 23 (SOT-23)

Outline 143 (SOT-143)

SIDE VIEW

TOP VIEW

END VIEW

DIMENSIONS ARE IN MILLIMETERS

(

INCHES

)

1.02 (0.040)

0.89 (0.035)

0.60 (0.024)

0.45 (0.018)

1.40 (0.055)

1.20 (0.047)

2.65 (0.104)

2.10 (0.083)

3.06 (0.120)

2.80 (0.110)

2.04 (0.080)

1.78 (0.070)

1.02 (0.041)

0.85 (0.033)

0.152 (0.006)

0.066 (0.003)

0.10 (0.004)

0.013 (0.0005)

0.69 (0.027)

0.45 (0.018)

0.54 (0.021)

0.37 (0.015)

X X X

PACKAGE

MARKING

CODE (XX)

DATE CODE (X)

0.69 (0.027)

0.45 (0.018)

1.40 (0.055)

1.20 (0.047)

2.65 (0.104)

2.10 (0.083)

0.60 (0.024)

0.45 (0.018) 0.54 (0.021)

0.37 (0.015)

0.10 (0.004)

0.013 (0.0005)

1.04 (0.041)

0.85 (0.033)

0.92 (0.036)

0.78 (0.031)

2.04 (0.080)

1.78 (0.070)

DIMENSIONS ARE IN MILLIMETERS (INCHES)

0.15 (0.006)

0.09 (0.003)

3.06 (0.120)

2.80 (0.110)

PACKAGE

MARKING

CODE (XX)

X X X

DATE CODE (X)

Outline SOT-363 (SC-70 6 Lead)

Outline SOT-323 (SC-70 3 Lead)

2.20 (0.087)

2.00 (0.079)

1.35 (0.053)

1.15 (0.045)

1.30 (0.051)

REF.

0.650 BSC (0.025)

2.20 (0.087)

1.80 (0.071)

0.10 (0.004)

0.00 (0.00)

0.25 (0.010)

0.15 (0.006)

1.00 (0.039)

0.80 (0.031) 0.20 (0.008)

0.10 (0.004)

0.30 (0.012)

0.10 (0.004)

0.30 REF.

10°

0.425 (0.017)

TYP.

DIMENSIONS ARE IN MILLIMETERS

(

INCHES

)

PACKAGE

MARKING

CODE (XX)

X X X

DATE CODE (X)

2.20 (0.087)

2.00 (0.079)

1.35 (0.053)

1.15 (0.045)

1.30 (0.051)

REF.

0.650 BSC (0.025)

2.20 (0.087)

1.80 (0.071)

0.10 (0.004)

0.00 (0.00)

0.25 (0.010)

0.15 (0.006)

1.00 (0.039)

0.80 (0.031)

0.20 (0.008)

0.10 (0.004)

0.30 (0.012)

0.10 (0.004)

0.30 REF.

10°

0.425 (0.017)

TYP.

DIMENSIONS ARE IN MILLIMETERS

(

INCHES

)

PACKAGE

MARKING

CODE (XX)

X X X

DATE CODE (X)

Device Orientation

USER

FEED

DIRECTION

COVER TAPE

CARRIER

TAPE

REEL

For Outline SOT-143

Note: "AB" represents package marking code.

"C" re

resents date code.

END VIE

8 mm

4 mm

TOP VIEW

ABC ABC ABC ABC

For Outlines SOT-23, -323

Note: "AB" represents package marking code.

"C" represents date code.

END VIE

8 mm

4 mm

TOP VIEW

ABC ABC ABC ABC

END VIE

8 mm

4 mm

TOP VIEW

Note: "AB" represents package marking code.

"C" represents date code.

ABC ABC ABC ABC

For Outline SOT-363

Tape Dimensions and Product Orientation

For Outline SOT-23

9° MAX

Ko 8° MAX

13.5° MAX

DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES)

LENGTH

WIDTH

DEPTH

PITCH

BOTTOM HOLE DIAMETER

3.15 ± 0.10

2.77 ± 0.10

1.22 ± 0.10

4.00 ± 0.10

1.00 + 0.05

0.124 ± 0.004

0.109 ± 0.004

0.048 ± 0.004

0.157 ± 0.004

0.039 ± 0.002

CAVITY

DIAMETER

PITCH

POSITION

1.50 + 0.10

4.00 ± 0.10

1.75 ± 0.10

0.059 + 0.004

0.157 ± 0.004

0.069 ± 0.004

PERFORATION

WIDTH

THICKNESS

8.00 + 0.30 – 0.10

0.229 ± 0.013

0.315 + 0.012 – 0.004

0.009 ± 0.0005

CARRIER TAPE

CAVITY TO PERFORATION

(WIDTH DIRECTION)

CAVITY TO PERFORATION

(LENGTH DIRECTION)

3.50 ± 0.05

2.00 ± 0.05

0.138 ± 0.002

0.079 ± 0.002

DISTANCE

BETWEEN

CENTERLINE

For Outline SOT-143

DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES)

LENGTH

WIDTH

DEPTH

PITCH

BOTTOM HOLE DIAMETER

3.19 ± 0.10

2.80 ± 0.10

1.31 ± 0.10

4.00 ± 0.10

1.00 + 0.25

0.126 ± 0.004

0.110 ± 0.004

0.052 ± 0.004

0.157 ± 0.004

0.039 + 0.010

CAVITY

DIAMETER

PITCH

POSITION

1.50 + 0.10

4.00 ± 0.10

1.75 ± 0.10

0.059 + 0.004

0.157 ± 0.004

0.069 ± 0.004

PERFORATION

WIDTH

THICKNESS

8.00 + 0.30 – 0.10

0.254 ± 0.013

0.315+ 0.012 – 0.004

0.0100 ± 0.0005

CARRIER TAPE

CAVITY TO PERFORATION

(WIDTH DIRECTION)

CAVITY TO PERFORATION

(LENGTH DIRECTION)

3.50 ± 0.05

2.00 ± 0.05

0.138 ± 0.002

0.079 ± 0.002

DISTANCE

9° MAX 9° MAX

www.agilent.com/semiconductors

For product information and a complete list of

distributors, please go to our web site.

For technical assistance call:

Americas/Canada: +1 (800) 235-0312 or

(916) 788-6763

Europe: +49 (0) 6441 92460

China: 10800 650 0017

Hong Kong: (65) 6756 2394

India, Australia, New Zealand: (65) 6755 1939

Japan: (+81 3) 3335-8152(Domestic/International), or

0120-61-1280(Domestic Only)

Korea: (65) 6755 1989

Singapore, Malaysia, Vietnam, Thailand, Philippines,

Indonesia: (65) 6755 2044

Taiwan: (65) 6755 1843

Data subject to change.

Obsoletes 5968-8014E

February 6, 2004

5989-0279EN

Tape Dimensions and Product Orientation

For Outlines SOT-323, -363

(CARRIER TAPE THICKNESS) T

(COVER TAPE THICKNESS)

DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES)

LENGTH

WIDTH

DEPTH

PITCH

BOTTOM HOLE DIAMETER

2.40 ± 0.10

1.20 ± 0.10

4.00 ± 0.10

1.00 + 0.25

0.094 ± 0.004

0.047 ± 0.004

0.157 ± 0.004

0.039 + 0.010

CAVITY

DIAMETER

PITCH

POSITION

1.55 ± 0.05

4.00 ± 0.10

1.75 ± 0.10

0.061 ± 0.002

0.157 ± 0.004

0.069 ± 0.004

PERFORATION

WIDTH

THICKNESS

8.00 ± 0.30

0.254 ± 0.02

0.315 ± 0.012

0.0100 ± 0.0008

CARRIER TAPE

CAVITY TO PERFORATION

(WIDTH DIRECTION)

CAVITY TO PERFORATION

(LENGTH DIRECTION)

3.50 ± 0.05

2.00 ± 0.05

0.138 ± 0.002

0.079 ± 0.002

DISTANCE

FOR SOT-323 (SC70-3 LEAD) An 8°C MAX

FOR SOT-363 (SC70-6 LEAD) 10°C MAX

ANGLE

WIDTH

TAPE THICKNESS

5.4 ± 0.10

0.062 ± 0.001

0.205 ± 0.004

0.0025 ± 0.00004

COVER TAPE