MBRS120-MBRS140 SENSITRON 1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE SEMICONDUCTOR Data Sheet 2931, Rev. - Features Schottky Barrier Chip Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency Surge Overload Rating to 30A Peak D For Use in Low Voltage Application Guard Ring Die Construction Plastic Case Material has UL Flammability Classification Rating 94V-O B A F C H Mechanical Data Dim A B C D E F G H Case: Low Profile Molded Plastic Terminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 Polarity: Cathode Band or Cathode Notch Marking: Type Number Weight: 0.093 grams (approx.) SMB/DO-214AA Min Max Min 3.30 3.94 0.130 4.06 4.70 0.160 1.91 2.11 0.075 0.152 0.305 0.006 5.08 5.59 0.2 2.13 2.44 0.084 0.051 0.203 0.002 0.76 1.27 0.030 In mm Maximum Ratings and Electrical Characteristics Characteristic Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current Max 0.155 0.185 0.083 0.012 0.220 0.096 0.008 0.05 In inch @TA=25C unless otherwise specified MBRS120 MBRS130 MBRS140 Unit VRRM VRWM VR 20 30 40 V VR(RMS) 14 21 28 V IO 1.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 30 A Forward Voltage @IF = 1.0A VFM 0.55 V @TA = 25C @TA = 100C IRM 0.5 20 mA RJA 95 K/W Tj -65 to +125 C TSTG -65 to +150 C Peak Reverse Current At Rated DC Blocking Voltage @TL = 75C G E Typical Thermal Resistance Junction to Ambient (Note 1) Operating Temperature Range Storage Temperature Range Note: 1. Mounted on P.C. Board with 5.0mm2 copper pad areas * 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 * * World Wide Web Site - http://www.sensitron.com * E-Mail Address - sales@sensitron.com * MBRS120-MBRS140 IF, INSTANTANEOUS FORWARD CURRENT (A) 1.0 0.5 25 50 75 100 125 1.0 0.1 Tj - 25C IF Pulse Width = 300 s 0.01 0 150 0.4 0.8 1.2 VF, INSTANTANEOUS FWD VOLTAGE (V) Fig. 2 Typ. Forward Characteristics TL , LEAD TEMPERATURE (C) Fig. 1 Forward Current Derating Curve 40 10 0 1000 Tj = 25C f = 1 MHz Single Half Sine-Wave (JEDEC Method) Cj, JUNCTION CAPACITANCE (pF) IFSM, PEAK FORWARD SURGE CURRENT (A) 30 20 10 Tj = 150C 100 10 0 1 100 10 0.1 NUMBER OF CYCLES AT 60 Hz 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance Fig. 3 Max Non-Repetitive Peak Fwd Surge Current IR, INSTANTANEOUS REVERSE CURRENT (mA) I(AV), AVERAGE FORWARD CURRENT (A) 2931, 100 10 Tj = 100C 1.0 Tj = 75C 0.1 0.01 Tj = 25C 0.001 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics * !!"#$* * % & '(&)*+,,---. & ./0*12&%# %3 & ./0* SENSITRON SEMICONDUCTOR 2931, - MBRS120-MBRS140 1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior not ice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users' fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user's units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. * * * * * * ! ! !!"#$* * % & '(&)*+,,---. & ./0*12&%# %3 & ./0*