V
RRM
= 50 V - 400 V
I
F
= 12 A
Features
• High Surge Capability DO-4 Package
• Types up to 400 V V
RRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
3. Stud is base.
Parameter Symbol 1N3889 (R) 1N3890 (R) 1N3891 (R) 1N3892 (R) Unit
Re
p
etitive
p
eak reverse
V
50
100
200
300
V
1N3893 (R)
400
2. Reverse polarity (R): Stud is anode.
1N3889 thru 1N3893R
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Conditions
Silicon Fast
Recover
y
Diode
pp
voltage
V
RRM
50
100
200
300
V
RMS reverse voltage V
RMS
35 70 140 280 V
DC blocking voltage V
DC
50 100 200 400 V
Continuous forward current I
F
12 12 12 12 A
Operating temperature T
j
-55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
Storage temperature T
stg
-55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
Parameter Symbol 1N3889 (R) 1N3890 (R) 1N3891 (R) 1N3892 (R) Unit
Diode forward voltage 1.4 1.4 1.4 1.4
25 25 25 25 μA
66 66 mA
Recovery Time
Maximum reverse recovery
time T
RR
200 200 200 200 nS
Thermal characteristics
Thermal resistance, junction
- case R
thJC
2.0 2.0 2.0 2.0 °C/W
I
F,SM
400
90 90
Reverse current I
R
V
F
1.4
-55 to 150
-55 to 150
V
R
= 50 V, T
j
= 25 °C
I
F
= 12 A, T
j
= 25 °C
T
C
≤ 100 °C
Conditions
90 90
T
C
= 25 °C, t
p
= 8.3 ms
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive forward
current, Half Sine Wave A
1N3893 (R)
2.0
420
12
600
90
25
I
F
=0.5 A, I
R
=1.0 A,
I
RR
= 0.25 A
V
R
= 50 V, T
j
= 150 °C
V
6
200
Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/
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1N3889 thru 1N3893R
Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/
2
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
1N3889 thru 1N3893R
DO- 4 (DO-203AA)
J
G
F
A
E
D
P
N
B
C
M
Inches Millimeters
Min Max Min Max
A 10-32 UNF
B 0.424 0.437 10.77 11.10
C ----- 0.505 ----- 12.82
D ------ 0.800 ----- 20.30
E 0.453 0.492 11.50 12.50
F 0.114 0.140 2.90 3.50
G ----- 0.405 ----- 10.29
J ----- 0.216 ----- 5.50
M ----- φ0.302 ----- φ7.68
N 0.031 0.045 0.80 1.15
P 0.070 0.79 1.80 2.00
Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/
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