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ES3A - ES3J — Fast Rectifiers
© 1999 Fairchild Semiconductor Corporation www.fairchildsemi.com
ES3A - ES3J Rev. 2.11
June 2016
ES3A - ES3J
Fast Rectifiers
Features
• For Surface Mount Applications
• Glass-Passivated Junction
• Low-Profile Package
• Easy Pick and Place
• Built-in Strain Relief
• Superfast Recovery Times for High Efficiency
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the re co mmen ded operating conditions and s tres si ng the parts to these level s i s not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Part Number Top Mark Package Packing Method
ES3A ES3A DO-214AB (SMC) Tape and Reel
ES3B ES3B DO-214AB (SMC) Tape and Reel
ES3C ES3C DO-214AB (SMC) Tape and Reel
ES3D ES3D DO-214AB (SMC) Tape and Reel
ES3J ES3J DO-214AB (SMC) Tape and Reel
Symbol Parameter Value Unit
ES3A ES3B ES3C ES3D ES3J
VRRM Maximum Repetitive Reverse Voltage 50 100 150 200 600 V
IF(AV) Average Rectified Forward Current,
.375” Lead Length at TA = 75°C 3.0 A
IFSM Non-Repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine Wave 100 A
TJ, TSTG Operating Junction and Storage Temperature Range -50 to +150 C
SMC/DO-214AB
COLOR BAND DENOTES CATHODE
ES3A - ES3J — Fast Rectifiers
© 1999 Fairchild Semiconductor Corporation www.fairchildsemi.com
ES3A - ES3J Rev. 2.11 2
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Note:
1. Device moun ted on FR-4 PCB 0.013 mm.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol Parameter Value Unit
PDPower Dissipation 1.66 W
RJA Thermal Resistance,
Junction to Ambient(1) Maxi mu m Land Pattern: 16 x 16 mm 47 C/W
Minimum Land Pattern: 2.6 x 3.2 mm 125
RJL Thermal Resistance,
Junction to Lead(1) Maximum Land Pattern: 16 x 16 mm 12 C/W
Minimum Land Pattern: 2.6 x 3.2 mm 16
Symbol Parameter Conditions Value Unit
ES3A ES3B ES3C ES3D ES3J
VFMaximum Forward Voltage IF = 3.0 A 0.95 1.70 V
trr Reverse Recovery Time IF = 0.5 A,
IR = 1.0 A,
IRR = 0.25 A
Typ. 20 35 ns
Max. 30 45
IRMaximum Reverse Current
at Rated VR
TA = 25C10
A
TA = 100C500
CTTotal Capacitance VR = 4.0 V, f = 1.0 MHz 45 pF
ES3A - ES3J — Fast Rectifiers
© 1999 Fairchild Semiconductor Corporation www.fairchildsemi.com
ES3A - ES3J Rev. 2.11 3
Typical Performance Characteristics
Figure 1. Forward Current Derating Curve Figure 2. Foward Voltage Characteristics
Figure 3. Total Capacitance Figure 4. Reverse Current vs. Reverse Voltage
Figure 5. Reve rse Recovery Time Characteristic and Test Circuit Diagram
0 25 50 75 100 125 150 175
0
0.5
1
1.5
2
2.5
3
3.5
Ambient Temperature [ºC]
Average Rectified Forward Current, IF [A]
SINGLE PHASE
HALF WAVE
60HZ
RESISTIVE OR
INDUCTIVE LOAD
.375" (9.0mm) LEAD
LENGTHS
0.01
0.1
1
10
100
0.40.60.81.01.21.41.61.8
ES3A-ES3D
ES3J
TA=25 oC
Pulse Width = 300us
2% Duty Cycle
Forward Voltage Drop, VF[V]
Forward Current, IF[A]
0.1 0.5 1 5 10 20 50 100 500
0
10
20
30
40
50
60
70
80
90
100
Reverse Voltage, VR [V]
Total Capacitance, CT [pF]
0 20406080100120140
0.1
1
10
100
1000
Percent of Rated Peak Reverse Voltage [%]
Reverse Current, IR [ A]
T = 25 C
º
A
T = 100 C
º
A
T = 75 C
º
A
μ
Pulse
Generator
(Note 2)
50
NONINDUCTIVE 50
NONINDUCTIVE
DUT
(-)
(+)
OSCILLOSCOPE
(Note 1)
50
NONINDUCTIVE
50V
(approx)
1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf.
2. Rise time = 10 ns max; Source impedance = 50 ohms.
NOTES:
1 . 0cm SET TIME BAS E FOR
tr r
+0.5A
0
-0.25A
-1.0A
5/ 10 ns/ c m
1.96
3.39
6.81
2.65 MAX
0.30
0.05 0.203
0.050
2.45
1.90
4.70
4.40
A
C
8.15
7.75
3.27
2.75 6.25
5.55
7.15
6.60
A
B
0.41
0.15
R0.15
4X
1.60
0.75
8°
0°
0.45
8°
0°
GAGE
PLANE
SEATING
PLANE
TOP VIEW
DETAIL A
SCALE 2:1
SIDE VIEW
LAND PATTERN RECOMMENDATION
NOTES:
EXCEPT WHERE NOTED, CONFORMS TO
A.
JEDEC DO-214, VARIATION AB
B
DOES NOT COMPLY TO JEDEC STD. VALUE
C. ALL DIMENSIONS ARE IN MILLIMETERS
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH, AND TIE BAR PROTRUSIONS.
E. DIMENSIONS AND TOLERANCING AS PER
ASME Y14.5-2009
F. LAND PATTERN STANDARD: DIOM7957X241M
G. DRAWING FILENAME: MKT-DO214ABrev2
B
B
0.13
M
C
B A
0.13
M
C
B A
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coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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