© 2017 Semiconductor Components Industries, LLC Publication Order Number:
August-2017, Rev. 2 FDB070AN06A0-F085/D
FDB070AN06A0-F085 — N-Channel PowerTrench® MOSFET
FDB070AN06A0-F085
N-Channel PowerTrench® MOSFET
60V, 80A, 7mΩ
Features
rDS(ON) = 6.1mΩ (Typ.), VGS = 10V, ID = 80A
Qg(tot) = 51nC (Typ.), VGS = 10V
Low Miller Charge
Low QRR Body Diode
UIS Capability (Single Pulse and Repetitive
Pulse)
Qualified to AEC Q101
RoHS Compliant
Formerly developmental type 82567
Applications
Motor / Body Load Control
ABS Systems
Powertrain Management
Injection Systems
DC-DC converters and Off-line UPS
Distributed Power Architectures and VRMs
Primary Switch for 12V and 24V systems
Ordering Information
Device
Output Voltage
Marking
Package
Shipping
FDB070AN06A0-F085
TBD
FDB070AN06A0
TO-263AB
Tape and Reel
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FDB070AN06A0-F085 — N-Channel PowerTrench® MOSFET
PD
Absolute Maximum Ratings TC = 25℃ unless otherwise noted
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameter
Ratings
Unit
VDSS
Drain to Source Voltage
60
V
VGS
Gate to Source Voltage
±20
V
ID
Drain Current
Continuous (TC < 97℃, VGS = 10V)
80
A
Continuous (TA = 25℃, VGS = 10V, RJA = 43℃/W)
15
A
Pulsed
Figure 4
A
EAS
Single Pulse Avalanche Energy (1)
190
mJ
PD
Power dissipation
175
W
Derate above 25℃
1.17
W/℃
TJ, TSTG
Operating and Storage Temperature
-55 to 175
℃
Thermal Characteristics
RJC
Thermal Resistance Junction to Case TO-220,TO-263
0.86
℃/W
RJA
Thermal Resistance Junction to Ambient TO-220,TO-263 (2)
62
℃/W
RJA
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area
43
℃/W
Notes:
1. Starting TJ = 25 ℃, L = 93 H, IAS = 64A.
2. Pulse width = 100s.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry.
All ON Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
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FDB070AN06A0-F085 — N-Channel PowerTrench® MOSFET
PD
Electrical Characteristics TC = 25℃ unless otherw ise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 A, VGS = 0 V
60
V
IDSS
Zero Gate Voltage Drain Current
VDS = 50 V
VGS = 0 V
1
A
TC = 150 ℃
250
IGSS
Gate to Source Leakage Current
VGS = ±20 V
±100
nA
On Characteristics
VGS(TH)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250A
2
4
V
rDS(ON)
Drain to Source On Resistance
ID = 80A, VGS = 10V
0.0061
0.007
Ω
ID = 80A, VGS = 10V,
TJ = 175℃
0.0127
0.015
Dynamic Characteristics
CISS
Input Capacitance
VDS = 25V, VGS = 0 V,
F = 1 MHz
3000
pF
COSS
Output Capacitance
510
pF
CRSS
Reverse Transfer Capacitance
230
pF
Qg(TOT)
Total Gate Charge at 10V
VGS = 0V to 10V
VDD = 30 V
ID = 80 A
Ig = 1.0 mA
51
66
nC
Qg(TH)
Threshold Gate Charge
VGS = 0V to 2V
5.4
7
nC
Qgs
Gate to Source Gate Charge
17
nC
Qgs2
Gate Charge Threshold to Plateau
11.6
nC
Qgd
Gate to Drain “Miller” Charge
16
nC
Switching Characteristics (VGS = 10 V)
tON
Turn-On Time
VDD = 30 V, ID = 80 A
VGS = 10 V, RGS = 5.6 Ω
256
ns
Td(ON)
Turn-On Delay Time
12
ns
tr
Rise Time
159
ns
Td(OFF)
Turn-Off Delay Time
27
ns
tf
Fall Time
35
ns
tOFF
Turn-Off Time
93
ns
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Voltage
ISD = 80 A
1.25
V
ISD = 40 A
1.0
V
trr
Reverse Recovery Time
ISD = 75 A, dISD/dt = 100 A/s
67
ns
QRR
Reverse Recovered Charge
ISD = 75 A, dISD/dt = 100 A/s
80
nC
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FDB070AN06A0-F085 — N-Channel PowerTrench® MOSFET
PD
Typical Characteristics TC = 25℃ unless otherwise noted
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
Figure 3. Normalized Maximum Transient Thermal Impedance
Figure 4. Peak Current Capability
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FDB070AN06A0-F085 — N-Channel PowerTrench® MOSFET
PD
Typical Characteristics TC = 25℃ unless otherwise noted
Figure 5. Forward Bias Safe Operating Area
NOTE: Refer to ON Semiconductor Application Notes AN7514 and
AN7515
Figure 6. Unclamped Inductive Switching
Capability
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
Figure 9. Drain to Source On Resistance vs Drain
Current
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
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FDB070AN06A0-F085 — N-Channel PowerTrench® MOSFET
PD
Typical Characteristics TC = 25℃ unless otherwise noted
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source Breakdown
Voltage vs Junction Temperature
Figure 13. Capacitance vs Drain to Source Voltage
Figure 14. Gate Charge Waveforms for Constant
Gate Current
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FDB070AN06A0-F085 — N-Channel PowerTrench® MOSFET
PD
Test Circuits and Waveforms
Figure 15. Unclamped Energy Test Circuit
Figure 16. Unclamped Energy Waveforms
Figure 17. Gate Charge Test Circuit
Figure 18. Gate Charge Waveforms
Figure 19. Switching Time Test Circuit
Figure 20. Switching Time Waveforms
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FDB070AN06A0-F085 — N-Channel PowerTrench® MOSFET
PD
Thermal Resistance vs. Mounting Pad Area
The maximum rated junction temperature, TJM, and
the thermal resistance of the heat dissipating path
determines the maximum allowable device power
dissipation, PDM, in an application. Therefore the
application’s ambient temperature, TA(℃), and
thermal resistance RθJA(℃/W) must be reviewed to
ensure that TJM is never exceeded.
Equation 1 mathematically represents the relationship
and serves as the basis for establishing the rating of
the part.
In using surface mount devices such as the TO-263
package, the environment in which it is applied will
have a significant influence on the part’s current and
maximum power dissipation ratings. Precise
determination of PDM is complex and influenced by
many factors:
1. Mounting pad area onto which the device is
attached and whether there is copper on one
side or both sides of the board.
2. The number of copper layers and the thickness
of the board.
3. The use of external heat sinks.
4. The use of thermal vias.
5. Air flow and board orientation.
6. For non steady state applications, the pulse
width, the duty cycle and the transient thermal
response of the part, the board and the
environment they are in.
ON Semiconductor provides thermal information to
assist the designer’s preliminary application
evaluation. Figure 21 defines the RJA for the device
as a function of the top copper (component side)
area. This is for a horizontally positioned FR-4 board
with 1oz copper after 1000 seconds of steady state
power with no air flow. This graph provides the
necessary information for calculation of the steady
state junction temperature or power dissipation. Pulse
applications can be evaluated using the ON
Semiconductor device Spice thermal model or
manually utilizing the normalized maximum transient
thermal impedance curve.
Thermal resistances corresponding to other copper
areas can be obtained from Figure 21 or by
calculation using Equation 2 or 3. Equation 2 is used
for copper area defined in inches square and equation
3 is for area in centimeters square. The area, in
square inches or square centimeters is the top copper
area including the gate and source pads.
Figure 21. Thermal Resistance vs Mounting Pad
Area
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FDB070AN06A0-F085 — N-Channel PowerTrench® MOSFET
PD
PSPICE Electrical Model
.SUBCKT FDB070AN06A0 2 1 3 ; rev March 2003
Ca 12 8 1.5e-9
Cb 15 14 1.5e-9
Cin 6 8 2.9e-9
Dbody 7 5 DbodyMOD
Dbreak 5 11 DbreakMOD
Dplcap 10 5 DplcapMOD
Ebreak 11 7 17 18 62
Eds 14 8 5 8 1
Egs 13 8 6 8 1
Esg 6 10 6 8 1
Evthres 6 21 19 8 1
Evtemp 20 6 18 22 1
It 8 17 1
Lgate 1 9 4.8e-9
Ldrain 2 5 1.0e-9
Lsource 3 7 3e-9
RLgate 1 9 48
RLdrain 2 5 10
RLsource 3 7 3
Mmed 16 6 8 8 MmedMOD
Mstro 16 6 8 8 MstroMOD
Mweak 16 21 8 8 MweakMOD
Rbreak 17 18 RbreakMOD 1
Rdrain 50 16 RdrainMOD 1.3e-3
Rgate 9 20 2.7
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
Rsource 8 7 RsourceMOD 3.1e-3
Rvthres 22 8 RvthresMOD 1
Rvtemp 18 19 RvtempMOD 1
S1a 6 12 13 8 S1AMOD
S1b 13 12 13 8 S1BMOD
S2a 6 15 14 13 S2AMOD
S2b 13 15 14 13 S2BMOD
Vbat 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*250),10))}
.MODEL DbodyMOD D (IS=7.6E-12 N=1.04 RS=2.2e-3 TRS1=2.7e-3 TRS2=2e-7
+ CJO=1.6e-9 M=0.55 TT=5e-12 XTI=3.9)
.MODEL DbreakMOD D (RS=8e-1 TRS1=5e-4 TRS2=-8.9e-6)
.MODEL DplcapMOD D (CJO=1.05e-9 IS=1e-30 N=10 M=0.45)
.MODEL MmedMOD NMOS (VTO=3.7 KP=10 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=2.7)
.MODEL MstroMOD NMOS (VTO=4.7 KP=100 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL MweakMOD NMOS (VTO=3.01 KP=0.03 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=27 RS=0.1)
.MODEL RbreakMOD RES (TC1=7.1e-4 TC2=-5.5e-7)
.MODEL RdrainMOD RES (TC1=1.7e-2 TC2=4e-5)
.MODEL RSLCMOD RES (TC1=3e-3 TC2=1e-5)
.MODEL RsourceMOD RES (TC1=1e-3 TC2=1e-6)
.MODEL RvthresMOD RES (TC1=-5.2e-3 TC2=-1.5e-5)
.MODEL RvtempMOD RES (TC1=-3e-3 TC2=1.3e-6)
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-4 VOFF=-2)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-2 VOFF=-4)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-1.5 VOFF=0.5)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=0.5 VOFF=-1.5)
.ENDS
Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank
Wheatley.
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FDB070AN06A0-F085 — N-Channel PowerTrench® MOSFET
PD
SABER Electrical Model
rev March 2003
template FDB070AN06A0 n2,n1,n3
electrical n2,n1,n3
{
var i iscl
dp..model dbodymod = (isl=7.6e-12,nl=1.04,rs=2.2e-3,trs1=2.7e-3,trs2=2e-7,cjo=1.6e-9,m=0.55,tt=5e-12,xti=3.9)
dp..model dbreakmod = (rs=8e-1,trs1=5e-4,trs2=-8.9e-6)
dp..model dplcapmod = (cjo=1.05e-9,isl=10e-30,nl=10,m=0.45)
m..model mmedmod = (type=_n,vto=3.7,kp=10,is=1e-30, tox=1)
m..model mstrongmod = (type=_n,vto=4.7,kp=100,is=1e-30, tox=1)
m..model mweakmod = (type=_n,vto=3.01,kp=0.03,is=1e-30, tox=1,rs=0.1)
sw_vcsp..model s1amod = (ron=1e-5,roff=0.1,von=-4,voff=-2)
sw_vcsp..model s1bmod = (ron=1e-5,roff=0.1,von=-2,voff=-4)
sw_vcsp..model s2amod = (ron=1e-5,roff=0.1,von=-1.5,voff=0.5)
sw_vcsp..model s2bmod = (ron=1e-5,roff=0.1,von=0.5,voff=-1.5)
c.ca n12 n8 = 1.5e-9
c.cb n15 n14 = 1.5e-9
c.cin n6 n8 = 2.9e-9
dp.dbody n7 n5 = model=dbodymod
dp.dbreak n5 n11 = model=dbreakmod
dp.dplcap n10 n5 = model=dplcapmod
spe.ebreak n11 n7 n17 n18 = 62
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evthres n6 n21 n19 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
i.it n8 n17 = 1
l.lgate n1 n9 = 4.8e-9
l.ldrain n2 n5 = 1.0e-9
l.lsource n3 n7 = 3e-9
res.rlgate n1 n9 = 48
res.rldrain n2 n5 = 10
res.rlsource n3 n7 = 3
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u,
w=1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod,
l=1u, w=1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u
res.rbreak n17 n18 = 1, tc1=7.1e-4,tc2=-5.5e-7
res.rdrain n50 n16 = 1.3e-3, tc1=1.7e-2,tc2=4e-5
res.rgate n9 n20 = 2.7
res.rslc1 n5 n51 = 1e-6, tc1=3e-3,tc2=1e-5
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 3.1e-3, tc1=1e-3,tc2=1e-6
res.rvthres n22 n8 = 1, tc1=-5.2e-3,tc2=-1.5e-5
res.rvtemp n18 n19 = 1, tc1=-3e-3,tc2=1.3e-6
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc=1
equations {
i (n51->n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/250))** 10))
}
}
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FDB070AN06A0-F085 — N-Channel PowerTrench® MOSFET
PD
PSPICE Thermal Model
REV 23 March 2003
FDB070AN06A0T
CTHERM1 TH 6 3.5e-3
CTHERM2 6 5 1.7e-2
CTHERM3 5 4 1.8e-2
CTHERM4 4 3 1.9e-2
CTHERM5 3 2 4.7e-2
CTHERM6 2 TL 7e-2
RTHERM1 TH 6 2e-2
RTHERM2 6 5 7e-2
RTHERM3 5 4 1e-1
RTHERM4 4 3 1.5e-1
RTHERM5 3 2 1.6e-1
RTHERM6 2 TL 1.85e-1
SABER Thermal Model
SABER thermal model FDB070AN06A0T
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 =3.5e-3
ctherm.ctherm2 6 5 =1.7e-2
ctherm.ctherm3 5 4 =1.8e-2
ctherm.ctherm4 4 3 =1.9e-2
ctherm.ctherm5 3 2 =4.7e-2
ctherm.ctherm6 2 tl =7e-2
rtherm.rtherm1 th 6 =2e-2
rtherm.rtherm2 6 5 =7e-2
rtherm.rtherm3 5 4 =1e-1
rtherm.rtherm4 4 3 =1.5e-1
rtherm.rtherm5 3 2 =1.6e-1
rtherm.rtherm6 2 tl =1.85e-1
}
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FDB070AN06A0-F085 — N-Channel PowerTrench® MOSFET
PD
Physical Dimensions
Figure 22. TO-263 2L (D2PAK), 4.445 x 10.16 x 15.24mm, TAPE REEL
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FDB070AN06A0-F085 — N-Channel PowerTrench® MOSFET
PD
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