DATA SH EET
Product specification
Supersedes data of 1997 May 07 1999 Apr 15
DISCRETE SEMICONDUCTORS
BSV52
NPN switching transistor
b
ook, halfpage
M3D088
1999 Apr 15 2
Philips Semiconductors Product specification
NPN switching transistor BSV52
FEATURES
Low current (max. 100 mA)
Low voltage (max. 12 V).
APPLICATIONS
High speed saturated switching applications, especially
in portable equipment.
DESCRIPTION
NPN switching transistor in a SOT23 plastic package.
MARKING
Note
1. = p : Made in Hong Kong.
= t : Made in Malaysia.
TYPE NUMBER MARKING CODE(1)
BSV52 B2
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
21
3
MAM255
Top view
2
3
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 20 V
VCEO collector-emitter voltage open base 12 V
VEBO emitter-base voltage open collector 5V
I
Ccollector current (DC) 100 mA
ICM peak collector current 200 mA
IBM peak base current 100 mA
Ptot total power dissipation Tamb 25 °C250 mW
Tstg storage temperature 65 +150 °C
Tjjunction temperature 150 °C
Tamb operating ambient temperature 65 +150 °C
1999 Apr 15 3
Philips Semiconductors Product specification
NPN switching transistor BSV52
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current IE= 0; VCB =20V −−400 nA
IE= 0; VCB =20V; T
j= 125 °C−−30 µA
IEBO emitter cut-off current IC= 0; VEB =4V −−100 nA
hFE DC current gain VCE =1V
I
C= 1 mA 25 −−
I
C
=10mA 40 120
IC=50mA 25 −−
V
CEsat collector-emitter saturation
voltage IC= 10 mA; IB= 300 µA−−300 mV
IC= 10 mA; IB=1mA −−250 mV
IC= 50 mA; IB=5mA −−400 mV
VBEsat base-emitter saturation voltage IC= 10 mA; IB= 1 mA 700 850 mV
IC= 50 mA; IB=5mA −−1.2 V
Cccollector capacitance IE=i
e= 0; VCB =5V; f=1MHz −−4pF
C
eemitter capacitance IC=i
c= 0; VEB = 1 V; f = 1 MHz −−4.5 pF
fTtransition frequency IC= 10 mA; VCE = 10 V; f = 100 MHz 400 500 MHz
Switching times (between 10% and 90% levels); (see Fig.2)
ton turn-on time ICon = 10 mA; IBon = 3 mA;
IBoff =1.5 mA −−10 ns
tddelay time −−4ns
t
rrise time −−6ns
t
off turn-off time −−20 ns
tsstorage time −−10 ns
tffall time −−10 ns
1999 Apr 15 4
Philips Semiconductors Product specification
NPN switching transistor BSV52
handbook, full pagewidth
RC
R2
R1
DUT
MLB826
Vo
RB(probe)
450
(probe)
450
oscilloscope oscilloscope
VBB
Vi
VCC
Fig.2 Test circuit for switching times.
Vi= 0.5 V to 4.2 V; T = 500 µs; tp=10 µs; tr=t
s3 ns.
R1 = 56 ; R2 = 1 k; RB=1k; RC= 270 .
VBB = 0.2 V; VCC = 2.7 V.
Oscilloscope: input impedance Zi=50.
1999 Apr 15 5
Philips Semiconductors Product specification
NPN switching transistor BSV52
PACKAGE OUTLINE
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
97-02-28
IEC JEDEC EIAJ
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface mounted package; 3 leads SOT23
1999 Apr 15 6
Philips Semiconductors Product specification
NPN switching transistor BSV52
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
1999 Apr 15 7
Philips Semiconductors Product specification
NPN switching transistor BSV52
NOTES
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Printed in The Netherlands 115002/00/03/pp8 Date of release: 1999 Apr 15 Document order number: 9397 750 05645