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Document Number: 72705
S-72202-Rev. B, 22-Oct-07
Vishay Siliconix
2N7000KL/BS170KL
Notes:
a. Pulse test: PW ≤ 300 µs duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
SPECIFICATIONS TA = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions
Limits
Unit Min Typ Max
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 10 µA 60 V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 12.02.5
Gate-Body Leakage IGSS V
DS = 0 V, VGS = ± 10 V ± 1
µA
Zero Gate Voltage Drain Current IDSS
VDS = 60 V, VGS = 0 V 1
VDS = 60 V, VGS = 0 V, TJ = 55 °C 10
On-State Drain CurrentbID(on)
VGS = 10 V, VDS = 7.5 V 0.8 A
VGS = 4.5 V, VDS = 10 V 0.5
Drain-Source On-ResistancebrDS(on)
VGS = 10 V, ID = 0.5 A 1.1 2 Ω
VGS = 4.5 V, ID = 0.2 A 1.6 4
Forward Transconductancebgfs VDS = 10 V, ID = 0.5 A 550 ms
Diode Forward Voltage VSD IS = 0.3 A, VGS = 0 V 0.87 1.3 V
Dynamicb
Total Gate Charge QgVDS = 10 V, VGS = 4.5 V
ID ≅ 0.25 A
0.4 0.6 nC
Gate-Source Charge Qgs 0.11
pFGate-Drain Charge Qgd 0.15
Gate Resistance Rg173
Tur n - On T im e td(on)
VDD = 30 V, RL = 150 Ω
ID ≅ 0.2 A, VGEN = 10 V, RG = 10 Ω
3.8 10
ns
tr4.8 15
Turn-Off Time td(off) 12.8 20
tf9.6 15
Output Characteristics
0.0
0.2
0.4
0.6
0.8
1.0
012345
VDS - Drain-to-Source Voltage (V)
-
Drain Current (A)
ID
VGS = 10, 7 V
3 V
5 V
4 V
6 V
Transfer Characteristics
0123456
VGS - Gate-to-Source Voltage (V)
-
Drain Current (A)
ID
TJ = - 55 °C
125 °C
25 °C
1.2
0.9
0.6
0.3
0