BC856BW,135 - NXP Semiconductors / Philips Semiconductors

DATA SH EET

Product data sheet

Supersedes data of 1999 Apr 12 2002 Feb 04

DISCRETE SEMICONDUCTORS

BC856W; BC857W; BC858W

PNP general purpose transistors

ook, halfpage

M3D102

2002 Feb 04 2

NXP Semiconductors Product data sheet

PNP general purpose transistors BC856W; BC857W;

BC858W

FEATURES

•Low current (ma x. 10 0 mA)

•Low voltage (max. 65 V).

APPLICATIONS

•General purpose switc hing and amplification.

DESCRIPTION

PNP transistor in a SOT323 plastic package.

NPN complements: BC846W, BC8 47W and BC848W.

MARKING

Note

1. * = -: made in Hong Kong.

* = t: made in Malaysia.

PINNING

TYPE NUMBER MARKING CODE(1)

BC856W 3D*

BC856AW 3A*

BC856BW 3B*

BC857W 3H*

BC857AW 3E*

BC857BW 3F*

BC857CW 3G*

BC858W 3M*

PIN DESCRIPTION

1base

2emitter

3collector

handbook, halfpage

MAM048

Top view

Fig.1 Simplified outline (SOT323; SC70) and

symbol.

2002 Feb 04 3

NXP Semiconductors Pr oduct data sheet

PNP general purpose transistors BC856W; BC857W; BC858W

LIMITING VALUES

In accordance with the Absolute Maximum Sys tem (IEC 60134).

Note

1. Refer to SOT323 standard mounting conditions.

THERMAL CHARACTE RISTICS

Note

1. Refer to SOT323 standard mounting conditions.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter

BC856W − −80 V

BC857W − −50 V

BC858W − −30 V

VCEO collector-emitter voltage open base

BC856W − −65 V

BC857W − −45 V

BC858W − −30 V

VEBO emitter-base voltage open collector − −5 V

ICcollector current (DC) − −100 mA

ICM peak collector current − −200 mA

IBM peak base current − −200 mA

Ptot total power dissipation Tamb ≤ 25 °C; note 1 −200 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to

ambient in free air; note 1 625 K/W

2002 Feb 04 4

NXP Semiconductors Pr oduct data sheet

PNP general purpose transistors BC856W; BC857W; BC858W

CHARACTERISTICS

Tamb = 25 °C; unless otherwise specified.

Note

1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector-base cut-off current VCB = −30 V; IE = 0 − −1−15 nA

VCB = −30 V; IE = 0;

Tj = 150 °C−−−4μA

IEBO emitter-base cu t-off current VEB = −5 V; IC = 0 −−−100 nA

hFE DC current gain IC = −2 mA; VCE = −5 V

BC856W 125 −475

BC857W; BC858 W 125 −800

BC856AW; BC857AW 125 −250

BC856BW; BC857BW 220 −475

BC857CW 420 −800

VCEsat collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA − −75 −300 mV

IC = −100 mA; IB = −5 mA;

note 1 − −250 −600 mV

VBEsat base-emitt er saturatio n voltage IC = −10 mA; IB = −0.5 mA − −700 −mV

IC = −100 mA; IB = −5 mA;

note 1 − −850 −mV

VBE base-emitte r voltage IC = −2 mA; VCE = −5 V −600 −650 −750 mV

IC = −10 mA; VCE = −5 V −−−820 mV

Cccollector capacitance VCB = −10 V; IE = Ie = 0;

f = 1 MHz −−3pF

Ceemitter cap a citance VEB = −0.5 V; IC = Ic = 0;

f = 1 MHz −−12 pF

fTtransition freque ncy VCE = −5 V; IC = −10 mA;

f = 100 MHz 100 −−MHz

Fnoise figure IC = −200 μA; VCE = −5 V;

RS = 2 kΩ; f = 1 kHz;

B = 200 Hz

−−10 dB

2002 Feb 04 5

NXP Semiconductors Pr oduct data sheet

PNP general purpose transistors BC856W; BC857W; BC858W

handbook, halfpage

200

300

400

500

hFE

100

MGT711

−10−2−10−1−1−10 −102−103

IC (mA)

(1)

(2)

(3)

Fig.2 DC current gain as a fu nction of collector

current; ty pical values.

BC857AW; VCE = −5 V.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

−1200

−1000

−800

−600

−400

−200

MGT712

−10

−2

−10

−1

−1−10 −10

−10

IC (mA)

VBE

(mV)

(1)

(2)

(3)

Fig.3 Base-emitter voltage as a function of

collector current; typical values.

BC857AW; VCE = −5 V.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 150 °C.

handbook, halfpage

−10

MGT713

−10

−1

−1−10 −10

−10

IC (mA)

VCEsat

(mV)

(1)

(2)(3)

Fig.4 Collector-emitter saturation voltage as a

function of collector current; typical values.

BC857AW; IC/IB = 20.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

MGT714

−10

−1

−1−10 −10

−10

IC (mA)

−1200

−1000

−800

−600

−400

−200

VBEsat

(mV)

(1)

(2)

(3)

Fig.5 Base-emitter saturation v oltage as a

function of collector current; typical values.

BC857AW; IC/IB = 20.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 150 °C.

2002 Feb 04 6

NXP Semiconductors Pr oduct data sheet

PNP general purpose transistors BC856W; BC857W; BC858W

handbook, halfpage

400

600

800

1000

hFE

200

MGT715

−10−2−10−1−1−10 −102−103

IC (mA)

(1)

(2)

(3)

Fig.6 DC current gain as a fu nction of collector

current; ty pical values.

BC857BW; VCE = −5 V.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

−1200

−1000

−800

−600

−400

−200

MGT716

−10

−2

−10

−1

−1−10 −10

−10

IC (mA)

VBE

(mV)

(1)

(2)

(3)

Fig.7 Base-emitter voltage as a function of

collector current; typical values.

BC857BW; VCE = −5 V.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 150 °C.

handbook, halfpage

−10

MGT717

−10

−1

−1−10 −10

−10

IC (mA)

VCEsat

(mV)

(1)

(2)

(3)

Fig.8 Collector-emitter saturation voltage as a

function of collector current; typical values.

BC857BW; IC/IB = 20.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

MGT718

−10

−1

−1−10 −10

−10

IC (mA)

−1200

−1000

−800

−600

−400

−200

VBEsat

(mV)

(1)

(2)

(3)

Fig.9 Base-emitter saturation v oltage as a

function of collector current; typical values.

BC857BW; IC/IB = 20.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 150 °C.

2002 Feb 04 7

NXP Semiconductors Pr oduct data sheet

PNP general purpose transistors BC856W; BC857W; BC858W

handbook, halfpage

400

600

800

1000

hFE

200

MGT719

−10−2−10−1−1−10 −102−103

IC (mA)

(1)

(2)

(3)

Fig.10 DC current gain as a function of collector

current; ty pical values.

BC857CW; VCE = −5 V.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

−1200

−1000

−800

−600

−400

−200

MGT720

−10

−1

−1−10 −10

−10

IC (mA)

VBE

(mV)

(1)

(2)

(3)

Fig.11 Base-emitter voltage as a func tion of

collector current; typical values.

BC857CW; VCE = −5 V.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 150 °C.

handbook, halfpage

−10

MGT721

−10

−1

−1−10 −10

−10

IC (mA)

VCEsat

(mV)

(1)

(2)

(3)

Fig.12 Collector-emitter saturation voltag e as a

function of collector current; typical values.

BC857CW; IC/IB = 20.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

MGT722

−10

−1

−1−10 −10

−10

IC (mA)

−1200

−1000

−800

−600

−400

−200

VBEsat

(mV)

(1)

(2)

(3)

Fig.13 Base-emitter saturation voltage as a

function of collector current; typical values.

BC857CW; IC/IB = 20.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 150 °C.

2002 Feb 04 8

NXP Semiconductors Pr oduct data sheet

PNP general purpose transistors BC856W; BC857W; BC858W

PACKAGE OUTLINE

UNIT A1

max bpcD Ee1HELpQwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

mm 0.1

1.1

0.8 0.4

0.3 0.25

0.10 2.2

1.8 1.35

1.15 0.65

1.3 2.2

2.0 0.23

0.13 0.20.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT323 SC-70

detail X

vMA

0 1 2 mm

scale

Plastic surface mounted package; 3 leads SOT32

97-02-28

2002 Feb 04 9

NXP Semiconductors Pr oduct data sheet

PNP general purpose transistors BC856W; BC857W; BC858W

DATA SHEET STATUS

Notes

1. Please consult the most rec en tly issued document before initiating or co mpleting a design.

2. The product s tatus of device(s ) described in this document may have changed since this docu ment was published

and may differ in case of multiple devices. The latest product status information is available on the Inter net at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production This document contains the prod uct specification.

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does not give any representations or warranties,

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published in this doc ument, including without limitation

specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

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not designed, au thorized or warran ted to be suitable for

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equipment, nor in applications where failure or malfunction

of an NXP Semiconductors product can reason ably be

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Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modificati on .

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratin gs only and

operation of the device at these or any other cond itions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

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Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values and

Characteristics sections of this document, and as such is

not complete, exhaus tive or legally binding.

NXP Semiconductors

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Printed in The Netherlands 613514/04/pp10 Date of release: 2002 Feb 04 Docum ent order number: 9397 750 09168