TCR2EF series, TCR2EE series
2019-06-20
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Toshiba Electronic Devices & Storage Corporation
TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic
TCR2EF series
TCR2EE series
200 mA CMOS Low Dropout Regulator with Fast Load Transient Response
The TCR2EF and TCR2EE series are CMOS single output voltage
regulators with an on/off control input, featuring low dropout voltage, low
output noise voltage and fast load transient response.
These voltage regulators are available in fixed output voltages between 1.0
V and 5.0 V and capable of driving up to 200 mA. They feature overcurrent
protection, an Auto-discharge function.
The TCR2EF and TCR2EE series has a low dropout voltage of 180 mV
(2.5 V output, IOUT = 150 mA) with low output noise voltage of 35 μVrms (2.5
V output) and a load transient response of only VOUT = ±60 mV (IOUT =
1 mA150 mA, COUT = 1.0 μF).
Thus, the TCR2EF and TCR2EE series are suitable for sensitive power
supply such as Analog and RF applications.
Features
Low dropout voltage
VDO = 150 mV (typ.) at 3.0 V output, IOUT = 150 mA
VDO = 180 mV (typ.) at 2.5 V output, IOUT = 150 mA
VDO = 230 mV (typ.) at 1.8 V output, IOUT = 150 mA
VDO = 380 mV (typ.) at 1.2 V output, IOUT = 150 mA
VDO = 510 mV (typ.) at 1.0 V output, IOUT = 150 mA
Low output noise voltage (VNO = 35 μVrms (typ.) at 2.5 V output, IOUT = 10 mA, 10 Hz < f < 100 kHz)
Fast load transient response (VOUT = ±60 mV (typ.) at IOUT = 1 mA 150 mA, COUT =1.0 μF)
Low quiescent bias current (IB = 35 μA (typ.) at IOUT = 0 mA)
High ripple rejection ratio (73 dB (typ.) at 2.5 V output, IOUT = 10 mA, f = 1 kHz)
Wide range output voltage line up (VOUT = 1.0 to 5.0 V)
High VOUT accuracy ±1.0 % (1.8 V VOUT)
Overcurrent protection
Auto-discharge
Pull down connection between CONTROL and GND
Ceramic capacitors can be used (CIN = 0.1 μF, COUT = 1.0 μF)
Small package ESV (SOT-553) (1.6 mm x 1.6 mm x 0.55 mm)
General package SMV (SOT-25) (2.8 mm x 2.9 mm x 1.1 mm)
SMV
ESV
Weight :
SMV (SOT
-25)(SC-74A) : 16 mg ( typ.)
ESV (SOT-553) : 3.0 mg ( typ.)
Start of commercial production
2012-
10
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Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Input voltage V
IN
6.0 V
Control voltage VCT -0.3 to 6.0 V
Output voltage VOUT -0.3 to VIN + 0.3 V
Power dissipation PD
SMV
200 (Note 1)
mW
580 (Note 2)
ESV
150 (Note 1)
320 (Note 3)
Junction temperature Tj 150 °C
Storage temperature range Tstg 55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the
operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: Unit Rating
Note 2: Rating at mounting on a board
(FR4 board dimension: 25.4 mm × 25.4 mm × 1.6 mm)
Note 3: Rating at mounting on a board
(FR4 board dimension: 30 mm × 30 mm × 0.8 mm)
Operating Ranges
Note 4: IOUT = 1 mA.
Please refer to Dropout voltage (Page 5) and use it within Absolute Maximum Ratings Junction temperature and
Operation Temperature Ranges.
Note 5: Do not operate at or near the maximum ratings of operating ranges for extended periods of time. Exposure to such
conditions may adversely impact product reliability and results in failures not covered by warranty.
Characteristics Symbol Rating Unit
Input voltage VIN 1.5 to 5.5 V (Note 4) V
Control voltage VCT 0 to 5.5 V
Output voltage VOUT 1.0 to 5.0 V
Output current IOUT DC 200 (Note 5)
mA
Operation Temperature Topr -40 to 85 °C
Output Capacitance COUT
1.0 μF
Input Capacitance CIN
0.1 μF
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Pin Assignment (top view)
SMV(SOT-25)(SC-74A) ESV(SOT-553)
VOUT
GND
NC
VIN
1
3
2
4
5
VOUT
CONTROL GND
NC
VIN
1
3
2
4
5
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List of Products Number, Output voltage and Marking
Product No. VOUT (V)
(typ.) Marking
Product No. VOUT (V)
(typ.) Marking
SMV(SOT-25) ESV(SOT-553) SMV(SOT-25) ESV(SOT-553)
TCR2EF10 TCR2EE10 1.0 1N0 TCR2EF28 TCR2EE28 2.8 2N8
TCR2EF105 TCR2EE105 1.05 1NA TCR2EF285 TCR2EE285 2.85 2ND
TCR2EF11 TCR2EE11 1.1 1N1 TCR2EF29 TCR2EE29 2.9 2N9
TCR2EF115 TCR2EE115 1.15 1NB - TCR2EE295 2.95 2NE
TCR2EF12 TCR2EE12 1.2 1N2 TCR2EF30 TCR2EE30 3.0 3N0
TCR2EF125 TCR2EE125 1.25 1NC - TCR2EE305 3.05 3NA
TCR2EF13 TCR2EE13 1.3 1N3 TCR2EF31 TCR2EE31 3.1 3N1
TCR2EF135 TCR2EE135 1.35 1ND TCR2EF32 TCR2EE32 3.2 3N2
TCR2EF14 TCR2EE14 1.4 1N4 TCR2EF33 TCR2EE33 3.3 3N3
- TCR2EE145 1.45 1NE - TCR2EE335 3.35 3ND
TCR2EF15 TCR2EE15 1.5 1N5 - TCR2EE34 3.4 3N4
- TCR2EE17 1.7 1N7 - TCR2EE35 3.5 3N5
TCR2EF18 TCR2EE18 1.8 1N8 TCR2EF36 TCR2EE36 3.6 3N6
- TCR2EE185 1.85 1NF - TCR2EE39 3.9 3N9
TCR2EF19 TCR2EE19 1.9 1N9 TCR2EF40 TCR2EE40 4.0 4N0
TCR2EF20 TCR2EE20 2.0 2N0 TCR2EF41 TCR2EE41 4.1 4N1
- TCR2EE24 2.4 2N4 - TCR2EE42 4.2 4N2
TCR2EF25 TCR2EE25 2.5 2N5 TCR2EF45 TCR2EE45 4.5 4N5
TCR2EF27 TCR2EE27 2.7 2N7 - TCR2EE48 4.8 4N8
- TCR2EE275 2.75 2NF TCR2EF50 TCR2EE50 5.0 5N0
Please ask your local retailer about the devices with other output voltages.
Marking (top view)
Example: T
CR2EF33 (3.3 V output) Example: TCR2EE33 (3.3 V output)
3 N 3
3 N 3
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Electrical Characteristics
(Unless otherwise specified,
VIN = VOUT + 1 V, IOUT = 50 mA, CIN = 0.1 μF, COUT = 1.0 μF, Tj = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Output voltage accuracy VOUT IOUT = 50 mA (Note 6)
VOUT < 1.8 V -18 +18 mV
1.8 V VOUT -1.0 +1.0 %
Input voltage VIN IOUT = 1 mA 1.5 5.5 V
Line regulation Regline VOUT + 0.5 V VIN 5.5 V, IOUT = 1 mA 1 15 mV
Load regulation Regload 1 mA IOUT 150 mA 15 30 mV
Quiescent current IB IOUT = 0 mA 35 60 μA
Stand-by current IB (OFF) VCT = 0 V 0.1 1.0 μA
Dropout voltage VDO IOUT = 150 mA (Note 7) 180 230 mV
Temperature coefficient TCVO 40°C Topr 85°C 100 ppm/°C
Output noise voltage VNO VIN = VOUT + 1 V, IOUT = 10 mA,
10 Hz f 100 kHz (Note 7) 35 μVrms
Ripple rejection ratio R.R. VIN = VOUT + 1 V, IOUT = 10 mA,
f = 1 kHz, VRipple = 500 mVp-p (Note 7) 73 dB
Load transient response VOUT IOUT = 1 mA150 mA, COUT = 1.0 μF ±60 mV
Control voltage (ON) VCT (ON) 1.0 5.5 V
Control voltage (OFF) VCT (OFF) 0 0.4 V
Note 6: Stable state with fixed IOUT condition
Note 7: The 2.5 V output product
Note 8: All characterisitcs of over 4.5 V output products are measured at VIN = VOUT + 0.5 V conditions.
Dropout voltage (IOUT = 150 mA, CIN = 0.1 μF, COUT = 1.0 μF, Tj = 25°C)
Output voltages Symbol Min Typ. Max Unit
1.0 V, 1.05 V
VDO
510 770
mV
1.1 V, 1.15 V 440 670
1.2 V, 1.25 V 380 570
1.3 V 350 470
1.4 V 310 420
1.5 V VOUT < 1.8 V 290 390
1.8 V VOUT < 2.5 V 230 310
2.5 V VOUT < 3.0 V 180 230
3.0 V VOUT 5.0 V 150 200
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Application Note
1. Examples of Application Circuit
SMV ESV
The figures above show the examples of configuration for using a Low dropout regulator. Insert a capacitor at VOUT and
VIN pins for stable input/output operation. (Ceramic capacitors can be used).
2. Power Dissipation
Both unit and board mounted power dissipation ratings for TCR2EF series and TCR2EE series are available in the Absolute
Maximum Ratings table.
Power dissipation is measured on the board shown below.
Test Board for Thermal Resistance
CONTROL pin
connection Operation
HIGH ON
LOW OFF
OPEN OFF
SMV ESV
Ambient temperature Ta (
)
PD Ta (ESV)
Power dissipation P
D
(mW)
40
0
0 40 120 80
100
200
300
400
Board dimension 30 mm x 30 mm,
x 0.8 mm Copper area 20 mm2,
mounted on FR4 Board
Unit Rating
*Board material: FR4 board
Board dimension: 30 mm × 30 mm × 0.8 mm
Copper area: 20 mm2
*Board material:
FR4 board
Board dimension: 25.4 mm × 25.4 mm × 1.6 mm
Copper area: 645 mm2
V
OUT
GND
VIN
1.0 μF
0.1
μF
CONTROL
NC
VOUT
GND
VIN
1.0 μF
0.1 μF
CONTROL
NC
Ambient temperature Ta ()
PD Ta (SMV)
Power dissipation PD (mW)
40 0
0
40 120
80
200
400
600
800
Board dimension 25.4 mm x 25.4 mm, x
1.6 mm Copper area 645 mm2,
mounted on FR4 Board
Unit Rating
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Attention in Use
Output Capacitors
Ceramic capacitors can be used for these devices. However, because of the type of the capacitors, there might be unexpected
thermal features. Please consider application condition for selecting capacitors. And Toshiba recommends the ESR of ceramic
capacitor be under 10 Ω.
Mounting
The long distance between IC and output capacitor might affect phase compensation by impedance in wire and inductor. For
stable power supply, output capacitor need to mount near IC as much as possible. Also VIN and GND pattern need to be
large and make the wire impedance small as possible.
Permissible Loss
Please have enough design patterns for expected maximum permissible loss. And under consideration of ambient
temperature, input voltage, and output current etc., we recommend proper dissipation ratings for maximum permissible loss;
in general maximum dissipation rating is 70 to 80 percent.
Overcurrent Protection
Overcurrent protection is designed in these products, but this does not assure for the suppression of uprising device operation.
If output pins and GND pins are shorted out, these products might break down.
In use of these products, please read through and understand dissipation idea for absolute maximum ratings from the above
mention or our Semiconductor Reliability Handbook. Then use these products under absolute maximum ratings in any
condition. Furthermore, Toshiba recommends inserting failsafe system into the design.
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Representative Typical Characteristics(Note)
1) Output voltage vs. Input voltage
2) Output voltage vs. Output current
Output voltage V
OUT (V)
Output current I
OUT
(mA)
Input voltage VIN (V)
Output voltage V
OUT
(V)
Input voltage VIN (V)
Output voltage V
OUT (V)
Output current IOUT (mA)
Input voltage VIN (V) Input voltage VIN (V)
VIN = 2.2 V,
CIN = 0.1 μF, COUT = 1 μF
VIN = 2.8 V,
CIN = 0.1 μF, COUT = 1 μF
VOUT = 1.2 V VOUT = 1.8 V
VOUT = 1.2 V
VOUT = 1.8 V
VOUT = 2.5 V
CIN = 0.1 μF, COUT = 1 μF
I
OUT
= 1mA
I
OUT
= 150mA
I
OUT
= 50mA
CIN = 0.1 μF, COUT = 1 μF
CIN = 0.1 μF, COUT = 1 μF
VOUT = 3.0 V
CIN = 0.1 μF, COUT = 1 μF
I
OUT
= 1mA
I
OUT
= 150mA
I
OUT
= 50mA
I
OUT
= 1mA
I
OUT
= 150mA
I
OUT
= 50mA
I
OUT
= 1mA
I
OUT
= 150mA
I
OUT
= 50mA
Output voltage V
OUT
(V)
Output voltage V
OUT
(V)
Output voltage V
OUT (V)
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3) Output voltage vs. Ambient temperature
Output voltage V
OUT (V)
Output current I
OUT
(mA)
VIN = 3.5 V,
CIN = 0.1 μF, COUT = 1 μF
VIN = 4.0 V,
CIN = 0.1 μF, COUT = 1 μF
Output voltage V
OUT (V)
Output current IOUT (mA)
VOUT = 2.5 V
VOUT = 3.0 V
VOUT = 1.2 V
VOUT = 1.8 V
VOUT = 2.5 V
VOUT = 3.0 V
VIN = 2.2 V,
CIN = 0.1 μF, COUT = 1 μF
IOUT = 50 mA
VIN = 2.8 V,
CIN = 0.1 μF, COUT = 1 μF
IOUT = 50 mA
VIN = 3.5 V,
CIN = 0.1 μF, COUT = 1 μF
IOUT = 50 mA
VIN = 4.0 V,
CIN = 0.1 μF, COUT = 1 μF
IOUT = 50 mA
Output voltage V
OUT (V)
Ambient temperature T
a
(°C)
Output voltage V
OUT (V)
Ambient temperature Ta (°C)
Output voltage V
OUT (V)
Output voltage V
OUT (V)
Ambient temperature Ta (°C)
Ambient temperature T
a
(°C)
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4) Dropout voltage vs. Output current
5) Quiescent current vs. Input voltage
CIN = 0.1 μF, COUT = 1 μF CIN = 0.1 μF, COUT = 1 μF
VOUT = 1.2 V
VOUT = 1.8 V
Dropout voltage V
DO
(mV)
Output current IOUT (mA)
Quiescent current I
B
(μA)
VOUT = 1.2 V
VOUT = 1.8 V
Input voltage VIN (V)
Quiescent current I
B
(μA)
Input voltage VIN (V)
VOUT = 2.5 V
VOUT = 3.0 V
Dropout voltage V
DO
(mV)
Output current IOUT (mA)
Dropout voltage V
DO
(mV)
Output current IOUT (mA)
Dropout voltage V
DO
(mV)
Output current IOUT (mA)
CIN = 0.1 μF, COUT = 1 μF
IOUT = 0 mA
CIN = 0.1 μF, COUT = 1 μF
IOUT = 0 mA
CIN = 0.1 μF, COUT = 1 μF CIN = 0.1 μF, COUT = 1 μF
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6) Quiescent current vs. Ambient temperature
VOUT = 1.2 V
VOUT = 1.8 V
VOUT = 2.5 V
VOUT = 3.0 V
VIN = 2.2 V
CIN = 0.1 μF, COUT = 1 μF
IOUT = 0 mA
VIN = 2.8 V
CIN = 0.1 μF, COUT = 1 μF
IOUT = 0 mA
VIN = 3.5 V
CIN = 0.1 μF, COUT = 1 μF
IOUT = 0 mA
VIN = 4.0 V
CIN = 0.1 μF, COUT = 1 μF
IOUT = 0 mA
Quiescent current I
B (μA)
Quiescent current I
B (μA)
Quiescent current I
B (μA)
Quiescent current I
B (μA)
Ambient temperature T
a
(°C)
Ambient temperature T
a
(°C)
Ambient temperature Ta (°C)
Ambient temperature T
a
(°C)
V
OUT
= 2.5 V
V
OUT
= 3.0 V
CIN = 0.1 μF, COUT = 1 μF
IOUT = 0 mA
CIN = 0.1 μF, COUT = 1 μF
IOUT = 0 mA
Input voltage VIN (V) Input voltage VIN (V)
Quiescent current I
B
(μA)
Quiescent current I
B (μA)
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7) Output voltage vs. Output current
8) Ripple rejection ratio vs. Frequency
V
IN
= 2.2 V ,V
ripple
= 500 mV
pp
CIN = none, COUT = 1 μF
IOUT = 10 mA, Ta = 25°C
V
IN
= 4.0 V, V
ripple
= 500 mV
pp
CIN = none, COUT = 1 μF
IOUT = 10 mA, Ta = 25°C
VOUT = 1.2 V
VOUT = 3.0 V
VOUT = 1.2 V
VOUT = 1.8 V
VOUT = 2.5 V
VOUT = 3.0 V
Pulse width = 1 ms
Pulse width = 1 ms
V
IN
= 5.5V
Output voltage V
OUT (V)
Output current IOUT (mA)
Output voltage V
OUT
(V)
Output current I
OUT
(mA)
Output voltage V
OUT
(V)
Output current IOUT (mA)
Output voltage V
OUT (V)
Output current IOUT (mA)
Ripple rejection ratio (dB)
Frequency f (Hz)
Ripple rejection
ratio (dB)
Frequency f (Hz)
V
IN
= 2.2V
V
IN
= 5.5V
VIN = 2.8V
VIN = 5.5V VIN = 5.5V
VIN = 3.5V VIN = 4.0V
Pulse width = 1 ms
Pulse width = 1 ms
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9) Control Transient Response
Control voltage
VCT (V)
Output voltage
VOUT (V)
V
IN
= 2.2 V,
CIN = 0.1 μF, COUT = 1 μF
I
OUT
= 1mA
VOUT = 1.2 V
V
OUT
= 1.8 V
VOUT = 2.5 V
VOUT = 3.0 V
0
1.0
2.0
0
1.0
2.0
0
1.0
2.0
0
1.0
2.0
0
1.0
2.0
0
1.0
2.0
V
IN
= 2.8 V,
CIN = 0.1 μF, COUT = 1 μF
0
1.0
2.0
0
1.0
2.0
V
IN
= 3.5 V,
CIN = 0.1 μF, COUT = 1 μF
V
IN
= 4.0 V,
CIN = 0.1 μF, COUT = 1 μF
3.0
3.0
Time t (25 μs/div)
Time t (25 μs/div)
Time t (25 μs/div)
Time t (25 μs/div)
I
OUT
= 50mA
I
OUT
= 150mA
I
OUT
= 1mA
IOUT = 50
mA
I
OUT
= 150mA
I
OUT
= 1mA
I
OUT
= 50mA
IOUT = 150
mA
I
OUT
= 1mA
I
OUT
= 50mA
I
OUT = 150
mA
Control voltage
VCT (V)
Output voltage
VOUT (V)
Control voltage
VCT (V)
Output voltage
VOUT (V)
Control voltage
VCT (V)
Output voltage
VOUT (V)
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10) Control Transient Response
(Note) The above characteristics curves are presented for reference only and not guaranteed by production
test, unless otherwise noted.
V
IN
= 2.2 V,
CIN = 0.1 μF, COUT = 1 μF
V
IN
= 2.8 V,
CIN = 0.1 μF, COUT = 1 μF
V
IN
= 3.5 V,
CIN = 0.1 μF, COUT = 1 μF
0
200
400
1.2
1.3
1.1
0
200
400
2.5
2.6
2.4
0
200
400
1.8
1.9
1.7
0
200
400
3.0
3.1
2.9
V
IN
= 4.0 V,
CIN = 0.1 μF, COUT = 1 μF
Output current
IOUT (mA)
Output voltage
VOUT (V)
Time t (25 μs/div)
Time t (25 μs/div)
V
OUT
= 1.2 V
(IOUT = 1 mA
150 mA)
V
OUT
= 1.8 V
(IOUT = 1 mA
150 mA)
V
OUT
= 2.5 V
(IOUT = 1 mA
150 mA)
V
OUT
= 3.0 V
(IOUT = 1 mA
150 mA)
Time t (25 μs/div)
Time t (25 μs/div)
Output current
IOUT (mA)
Output voltage
VOUT (V)
Output current
IOUT (mA)
Output voltage
VOUT (V)
Output current
IOUT (mA)
Output voltage
VOUT (V)
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Package Dimensions
SMV (SOT-25)(SC-74A) Unit: mm
Weight : 16 mg (typ.)
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Package Dimensions
ESV (SOT-553) Unit: mm
Weight: 3.0 mg (typ.)
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RESTRICTIONS ON PRODUCT USE
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Hardware, software and systems described in this document are collectively referred to as Product”.
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written permission, reproduction is permissible only if reproduction is without alteration/omission.
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complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which
minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to
property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the
Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information,
including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and
conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product
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applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any
other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO
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PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY
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