VOIDLESS-HERMETICALLY SEALED
FAST RECOVERY GLASS RECTIFIERS
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright © 2008
6-11-2008 REV B
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N5415 thru 1N5420
1N5415 thru 1N5420
DESCRIPTION APPEARANCE
This “fast recovery” rectifier diode series is military qualified to MIL-PRF-19500/411
and is ideal for high-reliability applications where a failure cannot be tolerated.
These industry-recognized 3.0 Amp rated re ctifiers for working peak reverse
voltages from 50 to 600 volts are hermetically sealed with voidless-glass
construction using an internal “Category I” metallurgical bond. These devices are
also available in surface mount MELF package configurations by adding a “US”
suffix (see separate data sheet for 1N5415US thru 1N5420US). Microsemi also
offers numerous other rectifier products to meet higher and lo wer current ratings
with various recovery time speed requir eme nts including fast and ultrafast device
types in both through-hole and surface mount packages.
“E” Package
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES APPLIC ATIONS / BENEFITS
• Popular JEDEC registered 1N5415 to 1N5420 series
• Voidless hermetically s ealed glass package
• Triple-Layer Passivation
• Internal “Category I” Metallurgical bonds
• Working Peak Reverse Voltage 50 to 600 Volts.
• JAN, JANTX, JANTXV, and JANS available per MIL-
PRF-19500/411
• Surface mount equivalents also avai lable in a square
end-cap MELF configuration with “US” suffix (see
separate data sheet for 1N5415US thru 1 N5420US)
• Fast recovery 3 Amp rectifiers 50 to 600 V
• Military and other high-reliability applications
• General rectifier applications i ncluding bridges,
half-bridges, catch diodes, etc.
• High forward surge current capability
• Extremely robust construction
• Low thermal resistance
• Controlled avalanche with peak reverse power
capability
• Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RAT ING S MECHANICAL AND PACKAGING
• Junction Temperature: -65oC to +175oC
• Storage Temperature: -65oC to +175oC
• Thermal Resistance: 20oC/W junction to le ad at 3/8
inch (10 mm) lead length from body
• Thermal Impedance: 1.5oC/W @ 10 ms heating time
• Average Rectified For ward Current (IO): 3 Amps @ TA
= 55ºC and 2 Amps @ TA = 100ºC (see Note 1)
• Forward Surge Current (8.3 ms half sine): 80 Amps
• Solder temperatures: 260oC for 10 s (maximum)
• CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
• TERMINATIONS: Axial-leads are Tin/Lead
(Sn/Pb) over Copper except for JANS with solid
Silver (Ag) and no finish
• MARKING: Body paint and part number, etc.
• POLARITY: Cathode band
• TAPE & REEL option: Standard per EIA-296
• WEIGHT: 750 mg
• See package dimensions on l ast page
ELECTRICAL CHARACTERISTICS FORWARD
VOLTAGE
VF @ 9 A
MAXIMUM
REVERSE
CURRENT
IR @ VRWM
AVERAGE
RECTIFIED
CURRENT IO
(NOTE 1)
TYPE VRWM
MINIMUM
BREAKDOWN
VOLTAGE
VBR @ 50μA
VOLTS MIN.
VOLTS MAX.
VOLTS 25oC
µA 100oC
µA
MAXIMUM
REVERSE
RECOVERY
TIME trr
(NOTE 2)
ns 55oC
AMPS 100oC
AMPS
1N5415
1N5416
1N5417
1N5418
1N5419
1N5420
50V
100V
200V
400V
500V
600V
55V
110V
220V
440V
550V
660V
0.6
0.6
0.6
0.6
0.6
0.6
1.5
1.5
1.5
1.5
1.5
1.5
1.0
1.0
1.0
1.0
1.0
1.0
20
20
20
20
20
20
150
150
150
150
250
400
3.0
3.0
3.0
3.0
3.0
3.0
2.0
2.0
2.0
2.0
2.0
2.0
NOTE 1: From 3.0 Amps at TA = 55oC, derate linearly at 22 mA/ oC to 2.0 Amps at TA = 100oC. Above TA = 100oC, derate
linearly to zero at TA = 175 oC. These ambient ratings are for PC boards where thermal resistance from mounting point to
ambient is sufficiently controlled where TJ(max) does not exceed 175 oC.
NOTE 2: IF = 0.5A, IRM = 1A, IR(REC) = 0.250A
VOIDLESS-HERMETICALLY SEALED
FAST RECOVERY GLASS RECTIFIERS
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N5415 thru 1N5420
1N5415 thru 1N5420
SYMBOLS & DEFINITI ONS
Symbol Definition
VBR Minimum Breakdown Voltage: The minimu m voltage the device will exhibit at a specified current.
VRWM Working Peak Reverse Voltage: The maximum peak voltage that ca n be applied over the operating
temperature range excluding all transient voltages (ref JESD282-B).
IO Average Rectified Output Current: The Output Current averaged over a full cycle with a 50 Hz or 60 Hz sine-
wave input and a 180 degree conductio n ang le.
VF Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specifi ed current.
IR Maximum Reverse Current: The maximum reverse (leakage) current that will flo w at the specified voltage an d
temperature.
trr Reverse Recovery Time: The time interval between the instant the current passes through zero when
changing from the forward direction to the reverse direction and a specified decay point after a peak reverse
current occurs.
GRAPHS
FIGURE 1 – Typical Reverse Current vs. PIV FIGURE 2 – Typical Forward Current vs.
Forward Voltage
Microsemi
Scottsdale Division Page 2
FIGURE 3 – Maximum Power vs. Lead Temperature FIGURE 4 – Maximum Current vs. Lead Temperature
Copyright © 2008
6-11-2008 REV B 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
VOIDLESS-HERMETICALLY SEALED
FAST RECOVERY GLASS RECTIFIERS
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N5415 thru 1N5420
1N5415 thru 1N5420
DIMENSIONS AND SCHEMATIC
Lead Tolerance = + .002 -. 003 in
*Includes sections of the lead or fillet over which the l ead diameter is uncontrolled.
Microsemi
Scottsdale Division Page 3
Copyright © 2008
6-11-2008 REV B 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
