2N6071A Series - ON Semiconductor

 Semiconductor Components Industries, LLC, 2000

May, 2000 – Rev. 3 1Publication Order Number:

2N6071/D

2N6071A/B Series

Preferred Device

Sensitive Gate Triacs

Silicon Bidirectional Thyristors

Designed primarily for full-wave ac control applications, such as

light dimmers, motor controls, heating controls and power supplies; or

wherever full-wave silicon gate controlled solid-state devices are

needed. Triac type thyristors switch from a blocking to a conducting

state for either polarity of applied anode voltage with positive or

negative gate triggering.

•Sensitive Gate Triggering Uniquely Compatible for Direct Coupling

to TTL, HTL, CMOS and Operational Amplifier Integrated Circuit

Logic Functions

•Gate T riggering 4 Mode — 2N6071A,B, 2N6073A,B, 2N6075A,B

•Blocking Voltages to 600 Volts

•All Diffused and Glass Passivated Junctions for Greater Parameter

Uniformity and Stability

•Small, Rugged, Thermopad Construction for Low Thermal

Resistance, High Heat Dissipation and Durability

•Device Marking: Device Type, e.g., 2N6071A, Date Code

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit

*Peak Repetitive Off-State Voltage(1)

(TJ =

40 to 110°C, Sine W ave,

50 to 60 Hz, Gate Open)

2N6071A,B

2N6073A,B

2N6075A,B

VDRM,

VRRM

200

400

600

Volts

*On-State RMS Current (TC = 85°C)

Full Cycle Sine W ave 50 to 60 Hz IT(RMS) 4.0 Amps

*Peak Non–repetitive Surge Current

(One Full cycle, 60 Hz, TJ = +110°C) ITSM 30 Amps

Circuit Fusing Considerations

(t = 8.3 ms) I2t 3.7 A2s

*Peak Gate Power

(Pulse Width ≤1.0 µs, TC = 85°C) PGM 10 Watts

*Average Gate Power

(t = 8.3 ms, TC = 85°C) PG(AV) 0.5 Watt

*Peak Gate Voltage

(Pulse Width ≤1.0 µs, TC = 85°C) VGM 5.0 Volts

*Operating Junction Temperature Range TJ–40 to

+110 °C

*Storage Temperature Range Tstg –40 to

+150 °C

Mounting Torque (6-32 Screw)(2) — 8.0 in. lb.

*Indicates JEDEC Registered Data.

(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

(2) Torque rating applies with use of a compression washer. Mounting torque in

excess of 6 in. lb. does not appreciably lower case-to-sink thermal

resistance. Main terminal 2 and heatsink contact pad are common.

TRIACS

4 AMPERES RMS

200 thru 600 VOLTS

Preferred devices are recommended choices for future use

and best overall value.

Device Package Shipping

ORDERING INFORMATION

2N6071A TO225AA 500/Box

http://onsemi.com

2N6071B TO225AA 500/Box

2N6073A TO225AA 500/Box

2N6073B TO225AA 500/Box

2N6075A TO225AA 500/Box

2N6075B TO225AA 500/Box

TO–225AA

(formerly T O–126)

CASE 077

STYLE 5

PIN ASSIGNMENT

Main Terminal 2

Gate

Main Terminal 1

MT1

MT2

2N6071A/B Series

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THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

*Thermal Resistance, Junction to Case RθJC 3.5 °C/W

Thermal Resistance, Junction to Ambient RθJA 75 °C/W

Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL260 °C

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

*Peak Repetitive Blocking Current

(VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C

TJ = 110°C

IDRM,

IRRM —

——

—10

2µA

ON CHARACTERISTICS

*Peak On-State Voltage(1)

(ITM =

6 A Peak) VTM — — 2 Volts

*Gate Trigger Voltage (Continuous dc)

(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms, TJ = –40°C)

All Quadrants

VGT

— 1.4 2.5

Volts

Gate Non–Trigger Voltage

(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms, TJ = 110°C)

All Quadrants

VGD

0.2 — —

Volts

*Holding Current

(Main Terminal Voltage = 12 Vdc, Gate Open,

Initiating Current =

1 Adc) (TJ = –40°C)

(TJ = 25°C)

—

——

—30

Turn-On T ime

(ITM = 14 Adc, IGT = 100 mAdc) tgt — 1.5 — µs

QUADRANT

(Maximum Value)

Type IGT

@ TJI

mA II

mA III

mA IV

Gate Trigger Current (Continuous dc)

(Main Terminal Voltage = 12 Vdc RL= 100 ohms)

2N6071A

2N6073A

+25°C 5 5 5 10

(Main

Terminal

Voltage

Vdc

100

ohms)

2N6073A

2N6075A –40°C 20 20 20 30

2N6071B

2N6073B

+25°C 3 3 3 5

2N6073B

2N6075B –40°C 15 15 15 20

DYNAMIC CHARACTERISTICS

Critical Rate of Rise of Commutation Voltage

@ VDRM, TJ = 85°C, Gate Open, ITM = 5.7 A, Exponential Waveform,

Commutating di/dt = 2.0 A/ms

dv/dt(c) — 5 — V/µs

*Indicates JEDEC Registered Data.

(1) Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

2N6071A/B Series

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Trigger devices are recommended for gating on Triacs. They provide:

1. Consistent predictable turn-on points.

2. Simplified circuitry.

3. Fast turn-on time for cooler, more efficient and reliable operation.

SAMPLE APPLICATION:

TTL-SENSITIVE GATE 4 AMPERE TRIAC

TRIGGERS IN MODES II AND III

0 V

–VEE VEE = 5.0 V

MC7400

510

Ω2N6071A LOAD

4115 V AC

60 Hz

+ Current

+ Voltage

VTM

Symbol Parameter

VDRM Peak Repetitive Forward Off State Voltage

IDRM Peak Forward Blocking Current

VRRM Peak Repetitive Reverse Off State Voltage

IRRM Peak Reverse Blocking Current

Voltage Current Characteristic of Triacs

(Bidirectional Device)

IDRM at VDRM

on state

off state

IRRM at VRRM

Quadrant 1

MainTerminal 2 +

Quadrant 3

MainTerminal 2 – VTM

VTM Maximum On State Voltage

IHHolding Current

2N6071A/B Series

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MT1

(+) IGT

GATE

(+) MT2

REF

MT1

(–) IGT

GATE

(+) MT2

REF

MT1

(+) IGT

GATE

(–) MT2

REF

MT1

(–) IGT

GATE

(–) MT2

REF

–

MT2 NEGATIVE

(Negative Half Cycle)

MT2 POSITIVE

(Positive Half Cycle)

Quadrant III Quadrant IV

Quadrant II Quadrant I

Quadrant Definitions for a Triac

IGT – + IGT

All polarities are referenced to MT1.

With in–phase signals (using standard AC lines) quadrants I and III are used.

SENSITIVE GATE LOGIC REFERENCE

IC Logic Firing Quadrant

Functions I II III IV

TTL 2N6071A

Series 2N6071A

Series

HTL 2N6071A

Series 2N6071A

Series

CMOS (NAND) 2N6071B

Series 2N6071B

Series

CMOS (Buffer) 2N6071B

Series 2N6071B

Series

Operational

Amplifier 2N6071A

Series 2N6071A

Series

Zero Voltage

Switch 2N6071A

Series 2N6071A

Series

2N6071A/B Series

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IT(AV), A VERAGE ON-STATE CURRENT (AMP)

140120100806040200–20–40–60

0.3

0.5

0.7

1.0

2.0 2.0

3.0

0.5

0.3

0.7

1.0

120

3.0

–60 –40 –20 0 20 40 60 80 100 140

OFF-STA TE VOLTAGE = 12 Vdc

ALL MODES OFF-STA TE VOLTAGE = 12 Vdc

ALL MODES

TJ, JUNCTION TEMPERATURE (°C)TJ, JUNCTION TEMPERATURE (°C)

120°

90°

30°

2.0

4.0

8.0

6.0

4.03.02.01.0

IT(RMS), RMS ON-STATE CURRENT (AMP)

3.0 0

2.0

4.0

6.0

0 1.0 2.0

8.0

4.0

α = 30°

60°

90°120°180°dc

IT(AV), A VERAGE ON-STATE CURRENT (AMP)

3.0

100

0 1.0 2.0

110

4.0

60°

120°

α = CONDUCTION ANGLE

3.0

100

0 1.0 2.0

110

120°

180°

90°

α = 30°

α = CONDUCTION ANGLE

4.0

IT(RMS), RMS ON-STATE CURRENT (AMP)

180°

α = 30°

90°

α = CONDUCTION ANGLE

60°

T , CASE TEMPERATURE ( C)

C°

T , CASE TEMPERATURE ( C)

C°

P , AVERAGE POWER (WATTS)

(AV)

VGT

P , AVERAGE POWER (WATTS)

(AV)

IGT

α = 180°

Figure 1. Average Current Derating Figure 2. RMS Current Derating

Figure 3. Power Dissipation Figure 4. Power Dissipation

Figure 5. Typical Gate–Trigger Voltage Figure 6. Typical Gate–Trigger Current

, GATE TRIGGER VOLTAGE (NORMALIZED)

, GATE TRIGGER CURRENT (NORMALIZED)

2N6071A/B Series

http://onsemi.com

, TRANSIENT THERMAL IMPEDANCE (

7.0

5.0

3.0

2.0

1.0

0.7

0.5

0.3

0.2

0.1 0 1.0 2.0 3.0 4.0 5.0

VTM, ON-STATE VOLTAGE (VOLTS)

TJ = 110°C

TJ = 25°C

3.0

2.0

1.0

0.7

0.5

0.3

–60 –40 –20 0 20 40 60 80 100 120 140

TJ, JUNCTION TEMPERATURE (°C)

GATE OPEN

APPLIES TO EITHER DIRECTION

141.0 2.0 3.0 4.0 5.0 7.0 10

NUMBER OF FULL CYCLES

TJ= –40 to +110°C

f = 60 Hz

0.20.1 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k

MAXIMUM

TYPICAL

0.1

0.2

0.5

1.0

2.0

3.0

5.0

0.3

t, TIME (ms)

IH, HOLDING CURRENT (NORMALIZED)

ITM, ON-STA TE CURRENT (AMP)

PEAK SINE WAVE CURRENT (AMP)

ZθJC(t) °C/W)

Figure 7. Maximum On–State Characteristics

Figure 8. Typical Holding Current

Figure 9. Maximum Allowable Surge Current

Figure 10. Thermal Response

2N6071A/B Series

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PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

–B–

–A– M

132

2 PL

0.25 (0.010) B M

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.425 0.435 10.80 11.04

B0.295 0.305 7.50 7.74

C0.095 0.105 2.42 2.66

D0.020 0.026 0.51 0.66

F0.115 0.130 2.93 3.30

G0.094 BSC 2.39 BSC

H0.050 0.095 1.27 2.41

J0.015 0.025 0.39 0.63

K0.575 0.655 14.61 16.63

M5 TYP 5 TYP

Q0.148 0.158 3.76 4.01

R0.045 0.065 1.15 1.65

S0.025 0.035 0.64 0.88

U0.145 0.155 3.69 3.93

V0.040 ––– 1.02 –––

STYLE 5:

PIN 1. MT 1

2. MT 2

3. GATE

TO–225AA

(formerly TO–126)

CASE 077–09

ISSUE W

2N6071A/B Series

http://onsemi.com

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2N6071/D

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