PD - 95729 Si4420DYPbF HEXFET(R) Power MOSFET l l l l l l N-Channel MOSFET Low On-Resistance Low Gate Charge Surface Mount Logic Level Drive Lead-Free 1 8 S 2 7 S 3 6 4 5 S G A A D VDSS = 30V D D RDS(on) = 0.009 D Top View Description This N-channel HEXFET(R) power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology. The low on-resistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications The SO-8 package with copper leadframe offers enhanced thermal characteristics that allow power dissipation of greater that 800mW in typical board mount applications. SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C EAS VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Gate-to-Source Voltage Junction and Storage Temperature Range Max. Units 30 12.5 10 50 2.5 1.6 0.02 400 20 -55 to + 150 V W/C mJ V C Max. Units 50 C/W A W Thermal Resistance Parameter RJA www.irf.com Maximum Junction-to-Ambient 1 8/11/04 Si4420DYPbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 30 --- --- --- 1.0 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.028 --- --- --- 29 --- --- --- --- 52 8.7 12 15 10 55 47 2240 1100 150 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.009 VGS = 10V, ID = 12.5A 0.013 VGS = 4.5V, ID = 10.5A --- V VDS = VGS, ID = 250A --- S VDS = 15V, ID = 12.5A 1.0 VDS = 30V, VGS = 0V A 5.0 VDS = 30V, VGS = 0V, TJ = 55C -100 VGS = -20V nA 100 VGS = 20V 78 ID = 12.5A --- nC VDS = 15V --- VGS = 10V, See Fig. 6 --- VDD = 15V --- ID = 1.0A ns --- RG = 6.0 --- RD = 15, --- VGS = 0V --- pF VDS = 15V --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM VSD trr Parameter Continuous Source Current (Diode Conduction) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Min. Typ. Max. Units 2.3 50 --- --- --- 52 1.1 78 A V ns Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 2.3A, VGS = 0V TJ = 25C, IF = 2.3A D S Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 13mH RG = 25, IAS = 8.9A. (See Figure 15) Pulse width 300s; duty cycle 2%. When mounted on FR4 Board, t 10 sec 2 www.irf.com Si4420DYPbF 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 100 100 4.5V 20s PULSE WIDTH TJ = 25 C 10 0.1 1 10 4.5V TJ = 25C T J = -55C T J = 150C 100 VDS = 25V 20s PULSE WIDTH 6.0 7.0 8.0 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 9.0 RDS(on) , Drain-to-Source On Resistance (Normalized) 2.0 5.0 10 100 Fig 2. Typical Output Characteristics 1000 4.0 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 10 20s PULSE WIDTH TJ = 150 C 10 0.1 100 VDS , Drain-to-Source Voltage (V) ID, Drain-to-Source Current () VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP TOP ID = 12.5A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 Si4420DYPbF VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 3000 Ciss 2000 Coss 1000 20 VGS , Gate-to-Source Voltage (V) 4000 ID = 12.5A VDS = 24V VDS = 15V 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 Crss 0 1 10 0 100 0 20 VDS , Drain-to-Source Voltage (V) 100 OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 25 C ID , Drain Current (A) ISD , Reverse Drain Current (A) 80 1000 1000 TJ = 150 C 100 10 V GS = 0 V 1.0 2.0 3.0 4.0 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 60 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1 0.0 40 QG , Total Gate Charge (nC) 5.0 100 100us 1ms 10 10ms TC = 25 C TJ = 150 C Single Pulse 1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com Si4420DYPbF 100 14 12 ID , Drain Current (A) 80 Power ( W) 10 8 6 60 40 4 20 2 0 0.01 0 25 50 75 100 125 150 0.1 TC , Case Temperature ( C) 1 10 A 100 Time (sec) Fig 10. Typical Power Vs. Time Fig 9. Maximum Drain Current Vs. Case Temperature Thermal Response (Z thJA ) 100 D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 0.1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 RDS(on) , Drain-to-Source On Resistance () Si4420DYPbF RDS(on) , Drain-to -Source On Resistance () 0.20 0.16 0.12 0.08 VGS = 10V VGS = 4.5V 0.04 0.00 A 0 10 20 30 40 0.012 0.010 ID = 12.5A 0.008 0.006 4.0 50 ID , Drain Current (A) Fig 12. Typical On-Resistance Vs. Drain Current 6.0 7.0 8.0 9.0 1000 2.5 ID = 250A 2.0 1.5 1.0 -60 -20 20 60 100 10.0 Fig 13. Typical On-Resistance Vs. Gate Voltage EAS , Single Pulse Avalanche Energy (mJ) VGS(th) , Variace (V) 3.0 140 180 T J , Temperature (C) Fig 14. Typical Threshold Voltage Vs.Temperature 6 5.0 VGS, Gate -to -Source Voltage (V) TOP 800 BOTTOM ID 4.0A 7.1A 8.9A 600 400 200 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( C) Fig 15. Maximum Avalanche Energy Vs. Drain Current www.irf.com Si4420DYPbF SO-8 Package Outline Dimensions are shown in millimeters (inches) D 5 A 8 7 6 5 6 H 0.25 [.010] 1 2 3 A 4 MAX MIN .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BASIC 1.27 BASIC e1 6X e e1 C .025 BASIC 0.635 BASIC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0 8 0 8 y 0.10 [.004] 0.25 [.010] MAX K x 45 A 8X b MILLIMETERS MIN A E INCHES DIM B A1 8X L 8X c 7 C A B F OOTPRINT NOT ES : 1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028] 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010]. 6.46 [.255] 7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO A S UBST RAT E. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking EXAMPLE: T HIS IS AN IRF7101 (MOSFET ) INT ERNAT IONAL RECT IFIER LOGO XXXX F7101 DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER www.irf.com 7 Si4420DYPbF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/04 8 www.irf.com