A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specif i cations are subj ect to change wi thout notice.
CHARACTERISTICS TC = 25 OC
SYMBOL TEST CONDITIONS MINI MUM TYPICAL MAXIMUM UNITS
V(BR)DSS ID = 100 mA VGS = 0 V 125 V
IDSS VDSS = 50 V VGS = 0 V 5.0 mA
IGSS VGS = 20 V VDS = 0 V 1.0 µ
µµ
µA
VGS(th) VDS = 10 V ID = 100 mA 1.0 5.0 V
gfs VDS = 10 V ID = 100 mA 4 mho
Ciss
Coss
Crss
VDS = 50 V VGS = 0 V f = 1.0 MHz 350
250
50 pF
Gps
η
ηη
ηVDD = 50 V IDQ = 250 mA Pout = 150 W (PEP)
Fo = 30 & 30.001 MHz 45 17.0
50 dB
%
ψ
ψψ
ψ VSWR = 30:1 AT ALL PHASE ANGLES NO DEGRADRADATION IN OUTPUT POW ER
SILICON RF POWER MOSFET
MRF150
DESCRIPTION:
The MRF150 is an N-Channel
Enhancement-Mode MOS Broadband
RF Ppwer Transistor Designed for
Wideband Larg e Signal Amplifier
Applications From 2. 0 to 150 MHz.
MAXIMUM RATINGS
ID16 A
VDSS 125 V
VGS ± 40 V
PDISS 300 W @ TC = 25 OC
TJ-65 OC to +200 OC
TSTG -65 OC to +150 OC
θ
θθ
θJC 10 OC/W
PACKAGE STYLE .500 4L FLG
MINIMUM
inches / mm
.220 / 5.59
.720 / 18.28
.125 / 3.18
.245 / 6.22
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
.255 / 6.48
.980 / 24.89
.7.30 / 18.54
inches / mm
.230 / 5.84
H.003 / 0.08 .007 / 0.18
DIM
K
L
I
J
.090 / 2.29
.150 / 3.81
.980 / 24.89
.110 / 2.79
.175 / 4.45
1.050 / 26.67
H
IK
J
.112x45°
FULL R
C
E
B
G
D F
AL
Ø.125 NOM.
.125 / 3.18
.495 / 12.57 .505 / 12.83
.280 / 7.11
D
G
S
S
