Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - (c) NXP N.V. (year). All rights reserved or (c) Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - (c) Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D088 BSH103 N-channel enhancement mode MOS transistor Product specification Supersedes data of 1998 Jan 30 File under Discrete Semiconductors, SC13b 1998 Feb 11 Philips Semiconductors Product specification N-channel enhancement mode MOS transistor BSH103 FEATURES PINNING - SOT23 * Very low threshold PIN SYMBOL * High-speed switching DESCRIPTION 1 g gate * No secondary breakdown 2 s source * Direct interface to C-MOS, TTL etc. 3 d drain APPLICATIONS * Power management handbook, halfpage 3 d * DC to DC converters * Battery powered applications * `Glue-logic'; interface between logic blocks and/or periphery g * General purpose switch. s 1 2 Top view MAM273 DESCRIPTION N-channel enhancement mode MOS transistor in a SOT23 SMD package. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL PARAMETERS CONDITIONS MIN. MAX. UNIT - 30 V - 1 V - 8 V VDS = VGS ; ID = 1 mA 0.4 - V drain current (DC) Ts = 80 C - 0.85 A drain-source on-state resistance VGS = 2.5 V; ID = 0.5 A - 0.5 total power dissipation Ts = 80 C - 0.5 W VDS drain-source voltage (DC) VSD source-drain diode forward voltage VGS gate-source voltage (DC) VGSth gate-source threshold voltage ID RDSon Ptot VGD = 0; IS = 0.5 A CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 1998 Feb 11 2 Philips Semiconductors Product specification N-channel enhancement mode MOS transistor BSH103 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage (DC) - 30 V VGS gate-source voltage (DC) - 8 V ID drain current (DC) Ts = 80 C; note 1 - 0.85 A IDM peak drain current note 2 - 3.4 A Ptot total power dissipation Ts = 80 C - 0.5 W Tamb = 25 C; note 3 - 0.75 W Tamb = 25 C; note 4 - 0.54 W Tstg storage temperature -55 +150 C Tj operating junction temperature -55 +150 C Source-drain diode IS source current (DC) Ts = 80 C - 0.5 A ISM peak pulsed source current note 2 - 2 A Notes 1. Ts is the temperature at the soldering point of the drain lead. 2. Pulse width and duty cycle limited by maximum junction temperature. 3. Device mounted on printed-circuit board with an Rth a-tp (ambient to tie-point) of 27.5 K/W. 4. Device mounted on printed-circuit board with an Rth a-tp (ambient to tie-point) of 90 K/W. MBK502 MGM190 0.6 10 handbook, halfpage handbook, halfpage IDS Ptot (A) (W) (2) 1 (1) 0.4 10-1 tp = T P 0.2 DC 10-2 t tp 10-3 10-1 0 0 40 80 120 Ts (C) 160 T 1 10 = 0.01; Ts = 80 C. (1) RDSon limitation. (2) Pulsed. Fig.2 Power derating curve. 1998 Feb 11 Fig.3 SOAR. 3 VDS (V) 102 Philips Semiconductors Product specification N-channel enhancement mode MOS transistor BSH103 THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT 140 K/W thermal resistance from junction to soldering point Rth j-s MBK503 103 handbook, full pagewidth Rth j-s (K/W) =1 0.75 102 0.5 0.33 0.2 0.1 10 = P 0.05 tp T 0.02 t tp 0.01 T 1 10-6 Fig.4 0 10-5 10-4 10-3 10-2 10-1 tp (s) 1 Transient thermal resistance from junction to soldering point as a function of pulse time; typical values. 1998 Feb 11 4 Philips Semiconductors Product specification N-channel enhancement mode MOS transistor BSH103 CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 10 A 30 - - V VGSth gate-source threshold voltage VGS = VDS ; ID = 1 mA 0.4 - - V IDSS drain-source leakage current VGS = 0; VDS = 24 V - - 100 nA IGSS gate leakage current VGS = 8 V; VDS = 0 - - 100 nA RDSon drain-source on-state resistance VGS = 4.5 V; ID = 0.5 A - - 0.4 VGS = 2.5 V; ID = 0.5 A - - 0.5 VGS = 1.8 V; ID = 0.25 A - - 0.6 Ciss input capacitance VGS = 0; VDS = 24 V; f = 1 MHz - 83 - pF Coss output capacitance VGS = 0; VDS = 24 V; f = 1 MHz - 27 - pF Crss reverse transfer capacitance VGS = 0; VDS = 24 V; f = 1 MHz - 14 - pF QG total gate charge VGS = 4.5 V; VDD = 15 V; ID = 0.5 A; Tamb = 25 C - 2100 - pC QGS gate-source charge VDD = 15 V; ID = 0.5 A; Tamb = 25 C - 95 - pC QGD gate-drain charge VDD = 15 V; ID = 0.5 A; Tamb = 25 C - 670 - pC Switching times td(on) turn-on delay time VGS = 0 to 8 V; VDD = 15 V; ID = 0.5 A; Rgen = 6 - 2.5 - ns tf fall time VGS = 0 to 8 V; VDD = 15 V; ID = 0.5 A; Rgen = 6 - 3.5 - ns ton turn-on switching time VGS = 0 to 8 V; VDD = 15 V; ID = 0.5 A; Rgen = 6 - 6 - ns td(off) turn-off delay time VGS = 8 to 0 V; VDD = 15 V; ID = 0.5 A; Rgen = 6 - 20 - ns tr rise time VGS = 8 to 0 V; VDD = 15 V; ID = 0.5 A; Rgen = 6 - 7 - ns toff turn-off switching time VGS = 8 to 0 V; VDD = 15 V; ID = 0.5 A; Rgen = 6 - 27 - ns Source-drain diode VSD source-drain diode forward voltage VGD = 0; IS = 0.5 A - - 1 V trr reverse recovery time IS = 0.5 A; di/dt = -100 A/s - 25 - ns 1998 Feb 11 5 Philips Semiconductors Product specification N-channel enhancement mode MOS transistor handbook, full pagewidth BSH103 VDD 90 % Vin RL 10 % 0 Vout 90 % Vout Vin 10 % 0 td(off) td(on) tf MAM274 tr ton toff Fig.5 Switching times test circuit with input and output waveforms. MBK507 5 handbook, halfpage 16 VGS 14 (V) MBK505 4 handbook, halfpage (1)(2) (3)(4) (5) VDS ID (A) (V) 4 (6) 3 12 10 3 (7) 2 8 (1) (2) 2 6 1 (8) 4 1 (9) 2 0 0 2 4 6 8 QG (pC) Tamb = 25 C; tp = 300 s; = 0. (1) (2) (3) (4) VDD = 15 V; ID = 0.5 A; Tamb = 25 C. (1) VDS. (2) VGS. Fig.6 Gate-source and drain-source voltages as functions of total gate charge; typical values. 1998 Feb 11 10 VDS (V) 2200 2000 1800 1800 1600 1000 1000 800 600 400 200 0 0 0 VGS = 7.5 V. VGS = 5.5 V. VGS = 4.5 V. VGS = 3.5 V. Fig.7 6 (5) (6) (7) (8) VGS = 3 V. VGS = 2.5 V. VGS = 2 V. VGS = 1.5 V. (9) VGS = 1 V. Output characteristics; typical values. Philips Semiconductors Product specification N-channel enhancement mode MOS transistor BSH103 MBK506 4 MBK504 300 handbook, halfpage handbook, halfpage ID (A) C (pF) 3 200 2 100 Ciss 1 Coss Crss 0 0 0 1 2 VGS (V) 0 3 20 VDS (V) 30 VGS = 0 ; f = 1 MHz; Tamb = 25 C. VDS = 10 V; Tamb = 25 C; tp = 300 s; = 0. Fig.9 Fig.8 10 Capacitance as a function of drain-source voltage; typical values. Transfer characteristic; typical values. MBK508 2 MBK509 10 handbook, halfpage handbook, halfpage IS (A) RDSon 1.6 () (1) (2) (3) (4) 1.2 (5) (6) 1 0.8 (1) (2) (3) 0.4 0 10-1 0 0.4 0.8 VSD (V) 1.2 0 2 4 VGD = 0. Tamb = 25 C; tp = 300 s; = 0. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -65 C. (1) ID = 0.1 A. (2) ID = 0.22 A. (3) ID = 0.45 A. Fig.10 Source current as a function of source-drain diode forward voltage; typical values. 1998 Feb 11 6 8 10 VGS (V) (4) ID = 0.9 A. (5) ID = 1.8 A. (6) ID = 3.6 A. Fig.11 Drain-source on-state resistance as a function of gate-source voltage; typical values. 7 Philips Semiconductors Product specification N-channel enhancement mode MOS transistor BSH103 MBK510 MBK511 1.6 1.2 handbook, halfpage handbook, halfpage (1) k k (2) 1.2 0.8 0.8 0.4 0.4 0 -65 -15 V GSth at T j k = -------------------------------------. V GSth at 25C 35 85 135 0 -65 185 Tj (C) R DSon at T j k = ---------------------------------------- . R DSon at 25 C VGSth at VDS = VGS; ID = 1 mA. Fig.12 Temperature coefficient of gate-source threshold voltage as a function of junction temperature; typical values. 1998 Feb 11 -15 35 85 135 185 Tj (C) (1) RDSon at VGS = 4.5 V; ID = 0.5 mA. (2) RDSon at VGS = 2.5 V; ID = 0.5 mA. Fig.13 Temperature coefficient of drain-source on-resistance as a function of junction temperature; typical values. 8 Philips Semiconductors Product specification N-channel enhancement mode MOS transistor BSH103 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT23 1998 Feb 11 EUROPEAN PROJECTION 9 Philips Semiconductors Product specification N-channel enhancement mode MOS transistor BSH103 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1998 Feb 11 10 Philips Semiconductors Product specification N-channel enhancement mode MOS transistor BSH103 NOTES 1998 Feb 11 11 Philips Semiconductors - a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, Fax. +43 160 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 0044 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SAO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2686, Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GULTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Internet: http://www.semiconductors.philips.com (c) Philips Electronics N.V. 1998 SCA57 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 135108/00/04/pp12 Date of release: 1998 Feb 11 Document order number: 9397 750 03303