MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# Features * * * * * For surface mounted applications Glass passivated junction Easy pick and place High Temp Soldering: 260C for 10 Seconds At Terminals Superfast Recovery Times For High Efficiency Maximum Ratings * * * UF1A THRU UF1K Operating Temperature: -50C to +150C Storage Temperature: -50C to +150C Maximum Thermal Resistance; 30C/W Junction To Lead MCC Device Maximum Maximum Maximum Catalog Marking Reccurrent RMS DC Number Peak Reverse Voltage Blocking Voltage Voltage UF1A UF1A 50V 35V 50V UF1B UF1B 100V 70V 100V UF1D UF1D 200V 140V 200V UF1G UF1G 400V 280V 400V UF1J UF1J 600V 420V 600V UF1K UF1K 800V 560V 800V 1 Amp Surface Mount Super Fast Rectifier 50 to 800 Volts DO-214AA (SMBJ) (LEAD FRAME) H J A E C D B F G Electrical Characteristics @ 25C Unless Otherwise Specified Average Forward Current Peak Forward Surge Current IF(AV) 1.0A TL = 100C IFSM 30A 8.3ms, half sine VF 1.0V 1.4V 1.7V IFM = 1.0A; TJ = 25C* 10A 100A TA = 25C TA = 125C Maximum Instantaneous Forward Voltage UF1A-D UF1G UF1J-K Maximum DC Reverse Current At Rated DC Blocking Voltage Maximum Reverse Recovery Time UF1A-G UF1J-K Typical Junction Capacitance IR DIMENSIONS DIM A B C D E F G H J INCHES MIN .083 .075 .002 ----.030 .065 .200 .160 .130 MM MIN 2.11 1.91 .05 ----.76 1.65 5.08 4.06 3.30 MAX .096 .083 .008 .02 .050 .091 .220 .185 .155 MAX 2.44 2.11 .20 .51 1.27 2.32 5.59 4.70 3.94 SUGGESTED SOLDER PAD LAYOUT 0.085" 0.095" Trr CJ 50ns 100ns 17pF IF=0.5A, IR=1.0A, Irr=0.25A Measured at 1.0MHz, VR=4.0V *Pulse test: Pulse width 200 sec, Duty cycle 2% www.mccsemi.com 0.075" NOTE MCC UF1A thru UF1K trr +0.5A 0 -0.25 -1.0 NOTE:1.Rise Time = 7ns max. Input Impedance = 1 megohm. 22pF 2.Rise Time = 10ns max. 1cm SET TIME BASE FOR 50 ns/cm Source Impedance = 50 Ohms Fig. 1-REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 10 PEAK FORWARD SURGE CURRENT, AMPERES TJ = 25 J TYPICAL IFM, Apk UF1A 1.0 UF1G 0.1 UF1K 100 TJ = 25 J f = 1.0MHz Vsig = 50m Vp-p 10 1 0.1 1 10 100 .01 0 .2 .4 .6 .8 1.0 1.2 1.4 REVERSE VOLTAGE, VOLTS AVERAGE FORWARD CURRENT AMPERES 2.0 SINGLE PHASE HALF WAVE RESISTIVE OR INDUCTIVE P.C.B MOUNTED ON 0.315x0.315"(8.0x8.0mm) PAD AREAS 1.0 25 50 75 100 125 150 175 LEAD TEMPERATURE, J Fig. 4- FORWARD CURRENT DERATING CURVE Fig. 3- TYPICAL JUNCTION CAPACITANCE PEAK FORWARD SURGE CURRENT, AMPERES Fig. 2-FORWARD CHARACTERISTICS 30 25 8.3ms SINGLE HALF SINE WAVE 20 JEDEC METHOD 15 10 5 1 2 5 10 20 50 NUMBER OF CYCLES AT 60Hz Fig. 5-PEAK FORWARD SURGE CURRENT www.mccsemi.com 100