UF1A
THRU
UF1K
1 Amp Surface Mount
Super Fast
Rectifier
50 to 800 Volts
DO-214AA
(SMBJ) (LEAD FRAME)
Features
• For surface mounted applications
• Glass passivated junction
• Easy pick and place
• High Temp Soldering: 260°C for 10 Seconds At Terminals
• Superfast Recovery Times For High Efficiency
Maximum Ratings
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current IF(AV)
1.0A
TL = 100°C
Peak Forward Surge
Current IFSM 30A 8.3ms, half sine
Maximum Instantaneous
Forward Voltage
UF1A-D
UF1G
UF1J-K VF 1.4V
1.7V IFM = 1.0A;
TJ = 25°C*
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
IR
10µA
100µATA = 25°C
TA = 125°C
Typical Junction
Capacitance CJ
17pF Measured at
1.0MHz, VR=4.0V
*Pulse test: Pulse width 200 µsec, Duty cycle 2%
H
J
E
F
G
A
B
D
C
0.075”
0.085"
0.095”
SUGGESTED SOLDER
PAD LAYOUT
• Operating Temperature: -50°C to +150°C
• Storage Temperature: -50 °C to +150°C
• Maximum Thermal Resistance; 30°C/W Junction To Lead
MCC
Catalog
Number
Device
Marking Maximum
Reccurrent
Peak Reverse
Voltage
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
UF1A UF1A 50V 35V 50V
UF1B UF1B 100V 70V 100V
UF1D UF1D 200V 140V 200V
UF1G UF1G 400V 280V 400V
UF1J UF1J 600V 420V 600V
Maximum Reverse
Recovery Time
UF1A-G
UF1J-K Trr 50ns
100ns IF=0.5A, IR=1.0A,
Irr=0.25A
MCC
www.mccsemi.com
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .083 .096 2.11 2.44
B .075 .083 1.91 2.11
C .002 .008 .05 .20
D ---- - .02 ----- .51
E .030 .050 .76 1.27
F .065 .091 1.65 2.32
G .200 .220 5.08 5.59
H .160 .185 4.06 4.70
J.130 .155 3.30 3.94
omponents
21201 Itasca Street Chatsworth
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UF1K UF1K 800V 560V 800V
1.0V
UF1A thru UF1K MCC
www.mccsemi.com
NOTE:1.Rise Time = 7ns max.
Input Impedance = 1 megohm. 22pF
2.Rise Time = 10ns max.
Source Impedance = 50 Ohms
t
r
r
+0.5A
0
-0.25
-1.0
SET TIME
1cm
BASE FOR
50 ns/cm
F
i
g
.
1
-
R
E
V
E
R
S
E
R
E
C
O
V
E
R
Y
T
I
M
E
C
H
A
R
A
C
T
E
R
I
S
T
I
C
A
N
D
T
E
S
T
C
I
R
C
U
I
T
D
I
A
G
R
A
M
10
1.
0
0.
1
.0
1
0
.
2
.
4
.
6
.
8
1
.
0
1
.
2
1
.
4
TYPICALTJ = 25 ¢J
UF1A
UF1G
UF1K
1
00
10
1
0
.
1
1
1
0
1
0
0
T
J
=
2
5
¢J
f = 1.0MHz
Vsig = 50mVp-p
REVERSE VOLTAGE, VOLTS
Fig. 2-FORWARD CHARACTERISTICSFig. 3- TYPICAL JUNCTION CAPACITANCE
2.0
1.0
25
50
7
5
1
0
0
1
25
1
50
175
S
I
N
G
L
E
P
H
A
S
E
H
A
L
F
W
A
V
E
RESISTIVE OR INDUCTIVE
P.C.B MOUNTED ON
0
.
3
1
5
×
0
.
3
1
5
"
(
8
.
0
×
8
.
0
m
m
)
P
A
D
A
R
E
A
S
LEAD TEMPERATURE, ¢J
30
25
20
15
10
5
1 2
5 10 20
50 100
8.3ms SINGLE HALF SINE WAVE
JEDEC METHOD
NUMBER OF CYCLES AT 60Hz
Fig. 4- FORWARD CURRENT DERATING CURVE Fig. 5-PEAK FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT,
AMPERES
P
EAK FORWARD SURGE CURRENT,
AMPERES
IFM, ApkAVERAGE FORWARD
CURRENT AMPERES
