APT15GT120BRDQ1(G) 1200V TYPICAL PERFORMANCE CURVES APT15GT120BRDQ1 APT15GT120BRDQ1G* (R) *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT(R) TO -2 47 The Thunderblot IGBT(R) is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT(R) offers superior ruggedness and ultrafast switching speed. * Low Forward Voltage Drop * High Freq. Switching to 50KHz * Low Tail Current * Ultra Low Leakage Current G C E C * RBSOA and SCSOA Rated G E MAXIMUM RATINGS Symbol All Ratings: TC = 25C unless otherwise specified. Parameter APT15GT120BRDQ1(G) VCES Collector-Emitter Voltage 1200 VGE Gate-Emitter Voltage 30 I C1 Continuous Collector Current @ TC = 25C 36 I C2 Continuous Collector Current @ TC = 110C 18 I CM SSOA PD TJ,TSTG TL Pulsed Collector Current 1 UNIT Volts Amps 45 @ TC = 150C Switching Safe Operating Area @ TJ = 150C 45A @ 960V Total Power Dissipation Watts 250 Operating and Storage Junction Temperature Range -55 to 150 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. C 300 STATIC ELECTRICAL CHARACTERISTICS Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1mA) VGE(TH) Gate Threshold Voltage VCE(ON) I CES I GES MAX 4.5 5.5 6.5 2.5 3.0 3.6 Units 1200 (VCE = VGE, I C = 0.6mA, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 125C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25C) TYP 3.8 2 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125C) Volts 200 2 Gate-Emitter Leakage Current (VGE = 20V) TBD 480 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com A nA 12-2005 V(BR)CES MIN Rev C Characteristic / Test Conditions 050-6267 Symbol DYNAMIC CHARACTERISTICS Symbol APT15GT120BRDQ1(G) Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage 3 Qg Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector ("Miller ") Charge SSOA Switching Safe Operating Area td(on) tr td(off) tf Eon1 tf Eon1 f = 1 MHz 65 Gate Charge 10 VGE = 15V 105 TJ = 150C, R G = 5, VGE = 585 TJ = +25C 260 10 VCC = 800V 11 VGE = 15V Turn-off Delay Time 42 RG = 5 44 55 ns 95 I C = 15A Current Fall Time Turn-off Switching Energy J 800 Inductive Switching (125C) Current Rise Time Eoff ns 35 6 Turn-on Switching Energy (Diode) nC 85 RG = 5 Turn-on Delay Time Turn-on Switching Energy V A 11 I C = 15A Eon2 pF 45 10 5 UNIT 60 VCC = 800V 4 MAX 10 Inductive Switching (25C) Current Fall Time Turn-off Switching Energy td(off) 100 15V, L = 100H,VCE = 960V Turn-off Delay Time Eoff tr VGE = 0V, VCE = 25V VGE = 15V Turn-on Switching Energy (Diode) td(on) 1070 I C = 15A Current Rise Time Eon2 TYP Capacitance VCE = 600V Turn-on Delay Time Turn-on Switching Energy MIN 590 TJ = +125C J 1440 6 340 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic RJC Junction to Case (IGBT) RJC Junction to Case (DIODE) WT Package Weight MIN TYP MAX .50 1.18 5.9 UNIT C/W gm 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 050-6267 Rev C 12-2005 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) APT Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES V GE 35 = 15V TJ = -55C 30 25 TJ = 25C 20 15 TJ = 125C 10 5 12V 30 11V 20 10V 9V 10 0 5 10 15 20 25 30 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics(TJ = 25C) VGE, GATE-TO-EMITTER VOLTAGE (V) 35 30 25 20 TJ = -55C 15 TJ = 25C 10 TJ = 125C 5 0 J VCE = 240V 12 VCE = 600V 10 VCE = 960V 8 6 4 2 0 2 4 6 8 10 12 14 VGE, GATE-TO-EMITTER VOLTAGE (V) I = 15A C T = 25C 14 0 20 TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE 5 IC = 30A 4 IC = 15A 3 IC = 7.5A 2 1 9 10 11 12 13 14 15 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.00 0.95 0.90 0.85 0.80 0.75 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Threshold Voltage vs. Junction Temperature 6 5 IC = 30A 4 IC = 15A IC = 7.5A 3 2 1 VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE 0 -50 -25 0 25 50 75 100 125 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 45 IC, DC COLLECTOR CURRENT(A) VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) 1.10 1.05 120 FIGURE 4, Gate Charge VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics 6 40 60 80 100 GATE CHARGE (nC) 40 35 30 25 20 15 10 5 0 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 12-2005 250s PULSE TEST<0.5 % DUTY CYCLE 40 FIGURE 2, Output Characteristics (TJ = 125C) 16 Rev C 45 IC, COLLECTOR CURRENT (A) 13V 40 0 0 1 2 3 4 5 6 7 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 0 14V 50 8V 0 0 15V 050-6267 IC, COLLECTOR CURRENT (A) 40 APT15GT120BRDQ1(G) 60 IC, COLLECTOR CURRENT (A) 45 td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 12 VGE = 15V 10 8 6 4 VCE = 600V 2 TJ = 25C, TJ =125C 0 RG = 5 L = 100 H 5 40 tf, FALL TIME (ns) tr, RISE TIME (ns) 40 20 VCE = 800V RG = 5 L = 100 H 5 RG = 5, L = 100H, VCE = 800V 40 25 20 15 30 20 15 10 TJ = 25 or 125C,VGE = 15V 5 0 0 4000 EOFF, TURN OFF ENERGY LOSS (J) G 3000 5 10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 1000 V = 800V CE V = +15V GE R = 5 3500 TJ = 125C, VGE = 15V TJ = 25C, VGE = 15V 25 5 5 10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current TJ = 125C 2500 2000 1500 1000 500 TJ = 25C 0 = 800V V CE = +15V V GE R = 5 G 800 TJ = 125C 600 400 200 TJ = 25C 0 5 10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 5 10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 8000 4000 V = 800V CE V = +15V GE T = 125C 7000 Eon2,30A J 6000 5000 4000 3000 2000 1000 0 Eoff,30A Eon2,15A Eon2,7.5A 0 Eoff,15A Eoff,7.5A 10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance SWITCHING ENERGY LOSSES (J) EON2, TURN ON ENERGY LOSS (J) VGE =15V,TJ=25C 60 35 10 SWITCHING ENERGY LOSSES (J) VGE =15V,TJ=125C 45 RG = 5, L = 100H, VCE = 800V 30 12-2005 80 10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 35 Rev C 100 0 10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 050-6267 APT15GT120BRDQ1(G) 120 14 V = 800V CE V = +15V GE R = 5 3500 G 3000 Eon2,30A 2500 2000 1500 Eon2,15A Eoff,30A 1000 Eon2,7.5A 500 0 0 Eoff,7.5A Eoff,15A 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature TYPICAL PERFORMANCE CURVES 2,000 500 P C, CAPACITANCE ( F) IC, COLLECTOR CURRENT (A) Cies 1,000 Coes 100 50 APT15GT120BRDQ1(G) 50 Cres 45 40 35 30 25 20 15 10 5 10 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 0 0 200 400 600 800 1000 1200 1400 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area 0.50 D = 0.9 0.40 0.7 0.30 0.20 0.5 Note: 0.3 PDM ZJC, THERMAL IMPEDANCE (C/W) 0.60 t1 t2 0.10 0 t Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC SINGLE PULSE 0.1 0.05 10-5 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 1.0 0.00471 Power (watts) 0.229 0.0898 Case temperature. (C) FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL F = min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf 10 5 1 T = 125C J T = 75C C D = 50 % V = 800V CE R = 5 G max fmax2 = Pdiss - Pcond Eon2 + Eoff Pdiss = TJ - TC RJC 0 5 10 15 20 25 30 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current 12-2005 0.271 50 Rev C Junction temp. (C) 100 050-6267 RC MODEL FMAX, OPERATING FREQUENCY (kHz) 400 APT15GT120BRDQ1(G) APT15DQ120 Gate Voltage 10% TJ = 125C td(on) IC V CC tr V CE Collector Current 5% 90% 10% Collector Voltage A Switching Energy D.U.T. Figure 22, Turn-on Switching Waveforms and Definitions Figure 21, Inductive Switching Test Circuit 90% Gate Voltage td(off) tf Collector Voltage 90% 10% 0 Collector Current Switching Energy Rev C 12-2005 Figure 23, Turn-off Switching Waveforms and Definitions 050-6267 5% TJ = 125C TYPICAL PERFORMANCE CURVES APT15GT120BRDQ1(G) ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE MAXIMUM RATINGS Symbol IF(AV) IF(RMS) IFSM All Ratings: TC = 25C unless otherwise specified. APT15GT120BRDQ1(G) Characteristic / Test Conditions Maximum Average Forward Current (TC = 127C, Duty Cycle = 0.5) 15 RMS Forward Current (Square wave, 50% duty) 29 Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) UNIT Amps 110 STATIC ELECTRICAL CHARACTERISTICS Symbol VF Characteristic / Test Conditions MIN Forward Voltage TYP IF = 15A 2.8 IF = 30A 3.4 IF = 15A, TJ = 125C MAX UNIT Volts 2.45 DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP MAX UNIT trr Reverse Recovery Time I = 1A, di /dt = -100A/s, V = 30V, T = 25C F F R J - 21 trr Reverse Recovery Time - 240 Qrr Reverse Recovery Charge - 260 - 3 - 290 ns - 960 nC - 6 - 130 ns - 1340 nC - 19 Amps IRRM Reverse Recovery Time Qrr Reverse Recovery Charge IF = 15A, diF/dt = -200A/s VR = 800V, TC = 125C Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM VR = 800V, TC = 25C Maximum Reverse Recovery Current trr IRRM IF = 15A, diF/dt = -200A/s IF = 15A, diF/dt = -1000A/s VR = 800V, TC = 125C Maximum Reverse Recovery Current ns nC - - Amps Amps D = 0.9 1.00 0.7 0.80 0.60 0.5 0.40 0.3 Note: PDM t1 t2 0.20 0.1 t Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC 0.05 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION RC MODEL Junction temp. (C) 0.676 0.00147 0.504 0.0440 Power (watts) Case temperature. (C) FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL 12-2005 10-5 Rev C 0 SINGLE PULSE 050-6267 ZJC, THERMAL IMPEDANCE (C/W) 1.20 trr, REVERSE RECOVERY TIME (ns) TJ = 175C 50 TJ = 125C 40 TJ = 25C 30 TJ = -55C 20 10 1 2 3 4 5 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 25. Forward Current vs. Forward Voltage 0 Qrr, REVERSE RECOVERY CHARGE (nC) 2500 T = 125C J V = 800V R 30A 2000 1500 15A 1000 7.5A 500 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 27. Reverse Recovery Charge vs. Current Rate of Change Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s) 1.2 trr 1.0 trr 0.8 Qrr CJ, JUNCTION CAPACITANCE (pF) 7.5A 150 100 25 T = 125C J V = 800V 30A R 20 15 15A 10 7.5A 5 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 28. Reverse Recovery Current vs. Current Rate of Change 35 Duty cycle = 0.5 T = 175C J 30 20 15 5 0 80 12-2005 15A 200 10 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 29. Dynamic Parameters vs. Junction Temperature Rev C 250 25 0.2 050-6267 30A 300 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 26. Reverse Recovery Time vs. Current Rate of Change IRRM 0.4 70 60 50 40 30 20 10 0 R 0 Qrr 0.6 0.0 T = 125C J V = 800V 350 50 IRRM, REVERSE RECOVERY CURRENT (A) 0 APT15GT120BRDQ1(G) 400 IF(AV) (A) IF, FORWARD CURRENT (A) 60 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 31. Junction Capacitance vs. Reverse Voltage 0 25 50 75 100 125 150 175 Case Temperature (C) Figure 30. Maximum Average Forward Current vs. CaseTemperature TYPICAL PERFORMANCE CURVES APT15GT120BRDQ1(G) Vr diF /dt Adjust +18V APT10078BLL 0V D.U.T. 30H trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 32. Diode Test Circuit 1 IF - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 IRRM - Maximum Reverse Recovery Current. 4 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. 5 1 4 Zero 5 3 0.25 IRRM 2 Qrr - Area Under the Curve Defined by IRRM and trr. Figure 33, Diode Reverse Recovery Waveform and Definitions TO-247 Package Outline e1 SAC: Tin, Silver, Copper 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 6.15 (.242) BSC 5.38 (.212) 6.20 (.244) Collector (Cathode) 20.80 (.819) 21.46 (.845) 3.55 (.138) 3.81 (.150) 2.21 (.087) 2.59 (.102) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) Gate Collector (Cathode) Emitter (Anode) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 12-2005 19.81 (.780) 20.32 (.800) Rev C 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 050-6267 4.50 (.177) Max.