
FEATURES
Direct Replacement For SILICONIX J/SST174 SERIES
LOW ON RESISTANCE rDS(on) ≤ 85Ω
LOW GATE OPERATING CURRENT ID(off) = 10pA
ABSOLUTE MAXIMUM RATINGS1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature -55 to 150°C
Junction Operating Temperature -55 to 135°C
Maximum Power Dissipation
Continuous Power Dissipation 350mW
Maximum Currents
Gate Current IG = -50mA
Maximum Voltages
Gate to Drain Voltage VGDS = 30V
Gate to Source Voltage VGSS = 30V
COMMON ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL CHARACTERISTIC MIN TYP MAX UNITS CONDITIONS
BVGSS Gate to Source Breakdown Voltage 30 IG = 1µA, VDS = 0V
VGS(F) Gate to Source Forward Voltage -0.7 V IG = -1mA, VDS = 0V
IGSS Gate Reverse Current 0.01 1 VGS = 20V, VDS = 0V
IG Gate Operating Current 0.01 VDG = -15V, ID = -1mA
ID(off) Drain Cutoff Current -0.01 -1
nA
VDS = -15V, VGS = 10V
SPECIFIC ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
J/SST174 J/SST175 J/SST176 J/SST177
SYMBOL CHARACTERISTIC MIN MAX MIN MAX MIN MAX MIN MAX UNITS CONDITIONS
VGS(off) Gate to Source
Cutoff Voltage 5 10 3 6 1 4 0.8 2.25 V VDS = -15V, ID = -10nA
IDSS Drain to Source
Saturation Current -20 -135 -7 -70 -2 -35 -1.5 -20 mA VDS = -15V, VGS = 0V
rDS(on) Drain to Source
On Resistance 85 125 250 300 Ω V
GS = 0V, VDS = -0.1V
SST SERIES
1
2
3
SOT-23
TOP VIEW
DG
S
J SERIES
TO-92
BOTTOM VIE
123
DGS
Linear Integrated System
J/SST174 SERIES
SINGLE P-CHANNEL
JFET SWITCH
Linear Integrated System
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