RN2907FE - Toshiba - Pdf.Support

RN2907FE~RN2909FE

2007-11-01

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)

RN2907FE,RN2908FE,RN2909FE

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

• Two devices are incorporated into an Extreme-Super-Mini (6-pin) package.

• Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enables the manufacture of ever more compact

equipment and lowers assembly cost.

• Complementary to RN1907FE~RN1909FE

Equivalent Circuit and Bias Resistor Values

Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common)

Characteristics Symbol Rating Unit

Collector-base voltage VCBO −50 V

Collector-emitter voltage

RN2907FE~

RN2909FE VCEO −50 V

RN2907FE −6

RN2908FE −7

Emitter-base voltage

RN2909FE

VEBO

−15

Collector current IC −100 mA

Collector power dissipation PC (Note 1) 100 mW

Junction temperature Tj 150 °C

Storage temperature range

RN2907FE~

RN2909FE

Tstg −55~150 °C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Total rating

Unit: mm

JEDEC ―

JEITA ―

TOSHIBA 2-2N1G

Weight: 0.003 g (typ.)

Equivalent Circuit

(top view)

6 5 4

1 2 3

Q1 Q2

Type No. R1 (kΩ) R2 (kΩ)

RN2907FE 10 47

RN2908FE 22 47

RN2909FE 47 22

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RN2907FE~RN2909FE

2007-11-01

Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)

Characteristics Symbol Test Condition Min Typ. Max Unit

ICBO V

CB = −50 V, IE = 0 ⎯ ⎯ −100

Collector cut-off current RN2907FE~2909FE

ICEO V

CE = −50 V, IB = 0 ⎯ ⎯ −500

RN2907FE VEB = −6 V, IC = 0 −0.081 ⎯ −0.15

RN2908FE VEB = −7 V, IC = 0 −0.078 ⎯ −0.145

Emitter cut-off current

RN2909FE

IEBO

VEB = −15 V, IC = 0 −0.167 ⎯ −0.311

RN2907FE 80 ⎯ ⎯

RN2908FE 80 ⎯ ⎯

DC current gain

RN2909FE

hFE VCE = −5 V,

IC = −10 mA

70 ⎯ ⎯

Collector-emitter

saturation voltage RN2907FE~2909FE VCE (sat) IC = −5 mA,

IB = −0.25 mA ⎯ −0.1 −0.3 V

RN2907FE −0.7 ⎯ −1.8

RN2908FE −1.0 ⎯ −2.6

Input voltage (ON)

RN2909FE

VI (ON) VCE = −0.2 V,

IC = −5 mA

−2.2 ⎯ −5.8

RN2907FE −0.5 ⎯ −1.0

RN2908FE −0.6 ⎯ −1.16

Input voltage (OFF)

RN2909FE

VI (OFF) VCE = −5 V,

IC = −0.1 mA

−1.5 ⎯ −2.6

Transition frequency RN2907FE~2909FE fT VCE = −10 V,

IC = −5 mA ⎯ 200 ⎯ MHz

Collector output

capacitance RN2907FE~2909FE Cob VCB = −10 V, IE = 0,

f = 1 MHz ⎯ 3 6 pF

RN2907FE 7 10 13

RN2908FE 15.4 22 28.6

Input resistor

RN2909FE

R1 ⎯

32.9 47 61.1

kΩ

RN2907FE 0.191 0.213 0.232

RN2908FE 0.421 0.468 0.515

Resistor ratio

RN2909FE

R1/R2 ⎯

1.92 2.14 2.35

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RN2907FE~RN2909FE

2007-11-01

Q1, Q2 Common

RN2907FE

RN2908FE RN2908FE

RN2909FE RN2909FE

RN2907FE

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RN2907FE~RN2909FE

2007-11-01

Q1, Q2 Common

RN2907FE RN2907FE

RN2908FE RN2908FE

RN2909FE RN2909FE

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RN2907FE~RN2909FE

2007-11-01

Type Name Marking

RN2907FE

RN2908FE

RN2909FE

Type name

Y H

Type name

Y I

Type name

Y J

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RN2907FE~RN2909FE

2007-11-01

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the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA

Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are

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