DISCRETE SEMICONDUCTORS DATA SHEET BFT25A NPN 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 December 1997 Philips Semiconductors Product specification NPN 5 GHz wideband transistor FEATURES BFT25A PINNING * Low current consumption (100 A - 1 mA) * Low noise figure * Gold metallization ensures excellent reliability. PIN DESCRIPTION Code: V10 1 base 2 emitter 3 collector 3 fpage DESCRIPTION The BFT25A is a silicon npn transistor, primarily intended for use in RF low power amplifiers, such as pocket telephones and paging systems with signal frequencies up to 2 GHz. 1 2 Top view MSB003 Fig.1 SOT23. The transistor is encapsulated in a 3-pin plastic SOT23 envelope. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter - - 8 V VCEO collector-emitter voltage open base - - 5 V IC DC collector current - - 6.5 mA Ptot total power dissipation up to Ts = 165 C; note 1 - - 32 mW hFE DC current gain IC = 0.5 mA; VCE = 1 V 50 80 200 fT transition frequency IC = 1 mA; VCE = 1 V; Tamb = 25 C; f = 500 MHz 3.5 5 - GHz GUM maximum unilateral power gain IC = 0.5 mA; VCE = 1 V; Tamb = 25 C; f = 1 GHz - 15 - dB F noise figure = opt; IC = 0.5 mA; VCE = 1 V; Tamb = 25 C; f = 1 GHz - 1.8 - dB = opt; IC = 1 mA; VCE = 1 V; Tamb = 25 C; f = 1 GHz - 2 - dB Note 1. Ts is the temperature at the soldering point of the collector tab. December 1997 2 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFT25A LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 8 V VCEO collector-emitter voltage open base - 5 V VEBO emitter-base voltage open collector - 2 V IC DC collector current - 6.5 mA Ptot total power dissipation - 32 mW Tstg storage temperature -65 150 C Tj junction temperature - 175 C up to Ts = 165 C; note 1 THERMAL RESISTANCE SYMBOL PARAMETER THERMAL RESISTANCE from junction to soldering point (note 1) Rth j-s 260 K/W Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS - 50 50 80 200 3.5 5 - GHz - 0.3 0.45 pF IC = 0.5 mA; VCE = 1 V; Tamb = 25 C; f = 1 GHz - 15 - dB = opt; IC = 0.5 mA; VCE = 1 V; Tamb = 25 C; f = 1 GHz - 1.8 - dB = opt; IC = 1 mA; VCE = 1 V; Tamb = 25 C; f = 1 GHz - 2 - dB ICBO collector cut-off current IE = 0; VCB = 5 V hFE DC current gain IC = 0.5 mA; VCE = 1 V fT transition frequency IC = 1 mA; VCE = 1 V; Tamb = 25 C; f = 500 MHz Cre feedback capacitance IC = ic = 0; VCB = 1 V; f = 1 MHz GUM maximum unilateral power gain (note 1) F noise figure Note 1. GUM is the maximum unilateral power gain, assuming S12 is zero and 2 G UM S 21 - dB. = 10 log ------------------------------------------------------------2 2 1 - S 11 1 - S 22 December 1997 MIN. TYP. MAX. UNIT 3 - nA Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFT25A MBG247 handbook,40 halfpage MCD138 100 handbook, halfpage P tot (mW) h FE 80 30 60 20 40 10 20 0 0 50 100 150 Ts (oC) 0 10 3 200 10 2 10 1 1 I C (mA) 10 VCE = 1 V. Fig.2 Power derating curve. Fig.3 MCD103 0.4 handbook, halfpage DC current gain as a function of collector current. MCD140 6 handbook, halfpage C re fT (pF) (GHz) 0.3 4 0.2 2 0.1 0 0 1 0 2 3 4 5 VCB (V) 0 1 2 Ic = ic = 0; f = 1 MHz. VCE = 1 V; Tamb = 25 C; f = 500 MHz. Fig.4 Fig.5 Feedback capacitance as a function of collector-base voltage. December 1997 4 3 I C (mA) Transition frequency as a function of collector current. 4 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFT25A In Figs 6 to 9, GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. MCD105 handbook,20 halfpage gain MCD104 handbook,25 halfpage (dB) G UM gain G UM 15 (dB) 20 10 15 MSG MSG 10 5 5 0 0 0.5 1.0 1.5 2.0 I C (mA) 0 0 0.5 1.0 1.5 2.0 I C (mA) VCE = 1 V; f = 1 GHz. VCE = 1 V; f = 500 MHz. Fig.6 Gain as a function of collector current. Fig.7 Gain as a function of collector current. MCD106 handbook,50 halfpage MCD107 handbook,50 halfpage gain gain (dB) (dB) G UM 40 40 30 G UM 30 MSG MSG 20 20 10 10 G max 0 10 10 2 10 3 f (MHz) 10 10 10 2 10 3 f (MHz) 10 VCE = 1 V; Ic = 1 mA. VCE = 1 V; Ic = 0.5 mA. Fig.8 Gain as a function of frequency. December 1997 G max 0 4 Fig.9 Gain as a function of frequency. 5 4 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFT25A MCD145 4 MCD146 4 handbook, halfpage handbook, halfpage F (dB) F (dB) IC = 2 mA f = 2 GHz 3 3 1 GHz 500 MHz 1 mA 2 2 1 0.5 mA 1 0 10-1 1 0 102 10 IC (mA) 103 104 f (MHz) VCE = 1 V. VCE = 1 V. Fig.10 Minimum noise figure as a function of collector current. Fig.11 Minimum noise figure as a function of frequency. 1 f (MHz) VCE (V) IC (mA) 500 1 1 0.5 2 pot. unst. region Noise Parameters 6 dB 0.2 4 dB Gamma (opt) Fmin (dB) (mag) (ang) 1.9 0.79 4 Rn/50 2.5 5 2.5 dB 10 +j 0 0.2 -j 0.5 1 2 5 10 MSG 10 14.5 dB 5 13 dB 0.2 11 dB 2 0.5 1 Zo = 50 . Average gain parameter: MSG = 14.5 dB. Fig.12 Noise circle figure. December 1997 stability circle 6 MCD108 OPT Fmin = 1.9 dB Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFT25A 1 f (MHz) VCE (V) IC (mA) 1000 1 1 0.5 2 pot. unst. region Noise Parameters 4 dB 0.2 3 dB Gamma (opt) Fmin (dB) (mag) (ang) 2 0.74 8 stability circle 5 8 dB Rn/50 2.6 10 +j 0.2 0 0.5 1 2 5 10 MSG 11.2 dB -j 10 10 dB 5 0.2 8 dB 2 0.5 MCD109 1 Zo = 50 . Average gain parameter: MSG = 11.2 dB. Fig.13 Noise circle figure. f (MHz) VCE (V) IC (mA) 2000 1 1 pot. unst. region stability circle 1 0.5 2 MSG 7.7 dB Noise Parameters OPT 0.2 Gamma (opt) Fmin (dB) (mag) (ang) 2.4 0.72 26 7 dB Rn/50 Fmin = 2.4 dB +j 1.7 0.2 0 5 0.5 1 -j 2 3 dB 5 10 10 4 dB 10 5 dB 2 0.5 Zo = 50 . Average gain parameter: MSG = 7.7 dB. 1 Fig.14 Noise circle figure. December 1997 5 6 dB 0.2 7 MCD110 OPT Fmin = 2 dB Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFT25A 1 handbook, full pagewidth 0.5 2 0.2 5 10 +j 0.2 0 0.5 1 2 5 10 40 MHz -j 3 GHz 10 5 0.2 2 0.5 MCD111 1 VCE = 1 V; IC = 1 mA. Zo = 50 . Fig.15 Common emitter input reflection coefficient (S11). 90 handbook, full pagewidth 135 45 3 GHz 40 MHz 180 5 4 3 2 0 1 -135 -45 -90 MCD112 VCE = 1 V; IC = 1 mA. Fig.16 Common emitter forward transmission coefficient (S21). December 1997 8 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFT25A 90 handbook, full pagewidth 135 45 3 GHz 180 0.5 40 MHz 0.4 0.3 0.2 0 0.1 -135 -45 -90 MCD114 VCE = 1 V; IC = 1 mA. Fig.17 Common emitter reverse transmission coefficient (S12). 1 handbook, full pagewidth 0.5 2 0.2 5 10 +j 0 0.2 0.5 1 2 5 10 40 MHz -j 10 3 GHz 0.2 5 2 0.5 1 MCD113 VCE = 1 V; IC = 1 mA. Zo = 50 . Fig.18 Common emitter output reflection coefficient (S22). December 1997 9 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFT25A PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT23 December 1997 EUROPEAN PROJECTION 10 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFT25A DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 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