DATA SH EET
Product specification
File under Discrete Semiconductors, SC14 December 1997
DISCRETE SEMICONDUCTORS
BFT25A
NPN 5 GHz wideband transistor
December 1997 2
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFT25A
FEATURES
•Low current consumption
(100 µA−1 mA)
•Low noise figure
•Gold metallization ensures
excellent reliability.
DESCRIPTION
The BFT25A is a silicon npn
transistor, primarily intended for use
in RF low power amplifiers, such as
pocket telephones and paging
systems with signal frequencies up to
2 GHz.
The transistor is encapsulated in a
3-pin plastic SOT23 envelope.
PINNING
PIN DESCRIPTION
Code: V10
1 base
2 emitter
3 collector
Fig.1 SOT23.
f
page
MSB003
Top view
12
3
QUICK REFERENCE DATA
Note
1. Tsis the temperature at the soldering point of the collector tab.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCBO collector-base voltage open emitter −−8V
V
CEO collector-emitter voltage open base −−5V
I
CDC collector current −−6.5 mA
Ptot total power dissipation up to Ts = 165 °C;
note 1 −−32 mW
hFE DC current gain IC = 0.5 mA; VCE = 1 V 50 80 200
fTtransition frequency IC = 1 mA; VCE = 1 V;
Tamb =25°C; f = 500 MHz 3.5 5 −GHz
GUM maximum unilateral power
gain IC = 0.5 mA; VCE = 1 V;
Tamb = 25 °C; f = 1 GHz −15 −dB
F noise figure Γ=Γopt;I
C= 0.5 mA; VCE = 1 V;
Tamb =25°C; f = 1 GHz −1.8 −dB
Γ=Γopt;I
C= 1 mA; VCE = 1 V;
Tamb =25°C; f = 1 GHz −2−dB
December 1997 3
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFT25A
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCE
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
Note
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter −8V
V
CEO collector-emitter voltage open base −5V
V
EBO emitter-base voltage open collector −2V
I
CDC collector current −6.5 mA
Ptot total power dissipation up to Ts= 165 °C;
note 1 −32 mW
Tstg storage temperature −65 150 °C
Tjjunction temperature −175 °C
SYMBOL PARAMETER THERMAL RESISTANCE
Rth j-s from junction to soldering point (note 1) 260 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current IE = 0; VCB = 5 V −−50 nA
hFE DC current gain IC= 0.5 mA; VCE = 1 V 50 80 200
fTtransition frequency IC = 1 mA; VCE = 1 V;
Tamb = 25 °C; f = 500 MHz 3.5 5 −GHz
Cre feedback capacitance IC=i
c= 0; VCB = 1 V; f = 1 MHz −0.3 0.45 pF
GUM maximum unilateral power
gain (note 1) IC = 0.5 mA; VCE = 1 V;
Tamb = 25 °C; f = 1 GHz −15 −dB
F noise figure Γ=Γopt;I
C= 0.5 mA; VCE = 1 V;
Tamb =25°C; f = 1 GHz −1.8 −dB
Γ=Γopt;I
C= 1 mA; VCE = 1 V;
Tamb =25°C; f = 1 GHz −2−dB
GUM 10 S21 2
1S
11 2
–
1S
22 2
–
-------------------------------------------------------------- dB.log=
December 1997 4
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFT25A
Fig.2 Power derating curve.
handbook, halfpage
0 50 100 200
40
30
10
0
20
MBG247
150
Ptot
(mW)
Ts (oC)
Fig.3 DC current gain as a function of collector
current.
VCE = 1 V.
handbook, halfpage
10
0
MCD138
110 1
10 2
10 3
40
100
hFE
I (mA)
C
20
80
60
Fig.4 Feedback capacitance as a function of
collector-base voltage.
Ic = ic= 0; f = 1 MHz.
handbook, halfpage
05
0.4
0.3
0.1
0
0.2
MCD103
1234
C
re
(pF)
VCB (V)
Fig.5 Transition frequency as a function of
collector current.
VCE = 1 V; Tamb =25°C; f = 500 MHz.
handbook, halfpage
0
6
4
2
012 4
MCD140
3I (mA)
C
(GHz)
T
f
December 1997 5
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFT25A
In Figs 6 to 9, GUM = maximum unilateral power gain;
MSG = maximum stable gain; Gmax = maximum available
gain.
Fig.6 Gain as a function of collector current.
VCE = 1 V; f = 500 MHz.
handbook, halfpage
0 0.5 1.0 2.0
25
0
10
MCD104
1.5
20
15
5
MSG
GUM
gain
(dB)
I (mA)
C
Fig.7 Gain as a function of collector current.
VCE = 1 V; f = 1 GHz.
handbook, halfpage
0 0.5 1.0 2.0
20
15
5
0
10
MCD105
1.5
MSG
GUM
gain
(dB)
I (mA)
C
Fig.8 Gain as a function of frequency.
VCE = 1 V; Ic= 0.5 mA.
handbook, halfpage
50
010
MCD106
102103104
10
20
30
40
gain
(dB)
f (MHz)
MSG
GUM
Gmax
Fig.9 Gain as a function of frequency.
VCE = 1 V; Ic= 1 mA.
handbook, halfpage
50
010
MCD107
102103104
10
20
30
40
gain
(dB)
f (MHz)
MSG
GUM
Gmax
December 1997 6
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFT25A
Fig.10 Minimum noise figure as a function of
collector current.
VCE = 1 V.
handbook, halfpage
4
2
1
0
3
MCD145
10−1110
F
(dB)
IC (mA)
f = 2 GHz
1 GHz
500 MHz
Fig.11 Minimum noise figure as a function of
frequency.
VCE = 1 V.
handbook, halfpage
4
2
1
0
3
MCD146
102104
103
F
(dB)
f (MHz)
IC = 2 mA
1 mA
0.5 mA
Noise Parameters
f
(MHz) VCE
(V) IC
(mA)
500 1 1
Fmin
(dB) Gamma (opt) Rn/50
(mag) (ang)
1.9 0.79 4 2.5
Fig.12 Noise circle figure.
Zo=50Ω.
Average gain parameter: MSG = 14.5 dB.
MCD108
0.2
0.5
1
2
5
0.2
0.5
1
2
10
5
10
∞
00.2 0.5 1 2 5 10
+ j
− j
stability
circle
pot. unst.
region
Fmin = 1.9 dB
ΓOPT
11 dB
6 dB
4 dB
MSG
14.5 dB
13 dB
2.5 dB
December 1997 7
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFT25A
Noise Parameters
f
(MHz) VCE
(V) IC
(mA)
1000 1 1
Fmin
(dB) Gamma (opt) Rn/50
(mag) (ang)
2 0.74 8 2.6
MCD109
0.2
0.5
1
2
5
0.2
0.5
1
2
10
5
10
∞
00.2 0.5 1 2 5 10
+ j
− j
stability
circle
pot. unst.
region
Fmin = 2 dB
ΓOPT
MSG
11.2 dB
10 dB
8 dB
8 dB
4 dB
3 dB
Fig.13 Noise circle figure.
Zo=50Ω.
Average gain parameter: MSG = 11.2 dB.
Noise Parameters
f
(MHz) VCE
(V) IC
(mA)
2000 1 1
Fmin
(dB) Gamma (opt) Rn/50
(mag) (ang)
2.4 0.72 26 1.7
MCD110
0.2
0.5
1
2
5
0.2
0.5
1
2
10
5
10
∞
00.2 0.5 1 2 5 10
+ j
− j
stability
circle
pot. unst.
region
Fmin = 2.4 dB
ΓOPT
7 dB
5 dB
6 dB
MSG
7.7 dB
3 dB
4 dB
Fig.14 Noise circle figure.
Zo=50Ω.
Average gain parameter: MSG = 7.7 dB.
December 1997 8
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFT25A
Fig.15 Common emitter input reflection coefficient (S11).
VCE = 1 V; IC= 1 mA.
Zo=50Ω.
handbook, full pagewidth
MCD111
0.2
0.5
1
2
5
0.2
0.5
1
2
10
5
10
∞
00.2 0.5 1 2 5 10
+ j
− j40 MHz
3 GHz
Fig.16 Common emitter forward transmission coefficient (S21).
VCE = 1 V; IC= 1 mA.
handbook, full pagewidth
MCD112
5 4 3 2 1
180°
−135°
−90°
−45°
0°
45°
90°
135°
3 GHz
40 MHz
December 1997 9
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFT25A
Fig.17 Common emitter reverse transmission coefficient (S12).
VCE = 1 V; IC= 1 mA.
handbook, full pagewidth
MCD114
0.5 0.4 0.3 0.2
3 GHz
0.1
180°
−90°
−135°−45°
0°
45°
90°
135°
40 MHz
Fig.18 Common emitter output reflection coefficient (S22).
VCE = 1 V; IC= 1 mA.
Zo=50Ω.
handbook, full pagewidth
MCD113
0.2
0.5
1
2
5
0.2
0.5
1
2
10
5
10
∞
00.2 0.5 1 2 5 10
+ j
− j
3 GHz
40 MHz
December 1997 10
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFT25A
PACKAGE OUTLINE
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
97-02-28
IEC JEDEC EIAJ
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface mounted package; 3 leads SOT23
December 1997 11
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFT25A
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
