DATA SH EET
Product specification
Supersedes data of November 1992 1995 Sep 04
DISCRETE SEMICONDUCTORS
BFG591
NPN 7 GHz wideband transistor
1995 Sep 04 2
NXP Semiconductors Product specification
NPN 7 GHz wideband transistor BFG591
FEATURES
High power gain
Low noise figure
High transition frequency
Gold metallization ensures
excellent reliability.
APPLICATIONS
Intended for applic ations in the GHz
range such as MATV or CATV
amplifiers and RF communications
subscriber equipm ent.
DESCRIPTION
NPN silicon planar epitaxial transistor
in a plastic, 4-pin SOT223 package.
PINNING
PIN DESCRIPTION
1emitter
2base
3emitter
4 collector
Fig.1 SOT223.
lfpage 4
123
MSB002 - 1
Top view
QUICK REFERENCE DATA
Note
1. Ts is the temperature at the sold ering point of the collector pin.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCBO collector-base voltage open emitter 20 V
VCEO collector-emitter voltage open base 15 V
ICcollector current (DC) 200 mA
Ptot total power dissipation up to Ts=80C; note 1 2W
hFE DC current gain IC=70mA; V
CE =8V 60 90 250
Cre feedback ca pacitance IC=I
c=0; V
CE =12V; f=1MHz 0.7 pF
fTtransition frequenc y IC=70mA; V
CE =12V; f=1GHz 7GHz
GUM maximum unilateral power
gain IC=70mA; V
CE =12V;
f=900MHz; T
amb =25C13 dB
insertion power gain IC=70mA; V
CE =12V;
f=900MHz; T
amb =25C12 dB
s21 2
1995 Sep 04 3
NXP Semiconductors Product specification
NPN 7 GHz wideband transistor BFG591
LIMITING VALUES
In accordance with the Absolute Maximum Ra ting System (I EC 134).
THERMAL CHARACTE RISTI CS
Note to the Limiting values and Thermal characteristics
1. Ts is the temperature at the sold ering point of the collector pin.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-bas e voltage open emitter 20 V
VCEO collector-emitter voltage open base 15 V
VEBO emitter-base voltage open collector 3V
ICcollector curr ent (DC) 200 mA
Ptot total power dissipation up to Ts=80C; note 1 2W
Tstg storage temperature 65 +150 C
Tjjunction temperatur e 150 C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-s thermal resistance from junction to
soldering point note 1 35 K/W
1995 Sep 04 4
NXP Semiconductors Product specification
NPN 7 GHz wideband transistor BFG591
CHARACTERISTICS
Tj=25C (unless otherwise specified).
Notes
1. GUM is the maximum unilateral power gain, assuming s12 is zero.
2. dim = 60 dB (DIN45004B);
Vp=V
o; Vq=V
o6dB; V
r=V
o6dB;
fp=795.25MHz; f
q=803.25MHz; f
r= 803.25 MHz; measured at f(p+q-r) =793.25MHz.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)CBO collector-bas e breakdown vo ltage IC= 0.1 mA; IE=0 20 V
V(BR)CES collector-emit te r br ea kdown volta ge IC=10mA; I
B=0 15 V
V(BR)EBO emitter-base breakdown vo ltage IE=0.1mA; I
C=0 3 V
ICBO collector-base leakage current IE=0; V
CB =10V 100 nA
hFE DC current gain IC=70mA; V
CE =8V 60 90 250
Cre feedback capacitance IB=I
b=0; V
CE =12V;
f=1MHz 0.7 pF
fTtransition frequency IC=70mA; V
CE =12V;
f=1GHz 7GHz
GUM maximum unilateral power gain;
note 1 IC=70mA; V
CE =12V;
f=900MHz; T
amb =25C13 dB
IC=70mA; V
CE =12V;
f=2GHz; T
amb =25C7.5 dB
insertion power gain IC=70mA; V
CE =12V;
f=1GHz; T
amb =25C12 dB
Vooutput volt a ge note 2 700 mV
s21 2
GUM 10 s21 2
1s
11 2
–1s
22 2
–
-------------------------------------------------------- dB.log=
1995 Sep 04 5
NXP Semiconductors Product specification
NPN 7 GHz wideband transistor BFG591
0 50 100 200
2.0
0
MGC791
150
2.5
3.0
0.5
1.0
1.5
Ptot
(W)
Ts (oC)
Fig.2 Power derating curve.
VCE =12V.
Fig.3 DC current gain as a function of collector
current, ty pical values.
handbook, halfpage
0
250
50
100
150
200
MRA749
10
−2
10
−1
11010
2
hFE
IC (mA)
handbook, halfpage
0
1.2
0.8
0.4
0416
MGC792
8
Cre
(pF)
VCB (V)
12
IC=0; f=1MHz.
Fig.4 Feedback capacitance as a function of
collector-base voltage, typical values.
handbook, halfpage
8
(GHz)
fT
4
2
010
2
MGC793
10 IC (mA)
1
6
Fig.5 Transition frequency as a function of
collector current, typical values.
f=1GHz; V
CE =12V.
1995 Sep 04 6
NXP Semiconductors Product specification
NPN 7 GHz wideband transistor BFG591
handbook, halfpage
04080
Gmax
IC (mA) 120
25
gain
(dB)
0
20
MGC795
15
10
5
GUM
f=900MHz; V
CE =12V.
Fig.6 Gain as a function of collector current;
typical values.
handbook, halfpage
04080
Gmax
GUM
IC (mA) 120
10
gain
(dB)
0
8
MGC794
6
4
2
f=2GHz; V
CE =12V.
Fig.7 Gain as a function of collector current;
typical values.
handbook, halfpage
50
010
MGC796
102103104
10
20
30
40
gain
(dB)
f (MHz)
GUM
Gmax
MSG
IC=70mA; V
CE =12V.
Fig.8 Gain as a function of frequency;
typical values.
1995 Sep 04 7
NXP Semiconductors Product specification
NPN 7 GHz wideband transistor BFG591
handbook, halfpage
04080
IC (mA) 120
−20
dim
(dB)
−70
−30
MGC797
−40
−50
−60
Fig.9 Intermodulation distortion as a function
of collector current; typical values.
VCE =12V; V
o=700mV; f
(p+q-r) =793.25MHz.
handbook, halfpage
04080
IC (mA) 120
−20
d2
(dB)
−70
−30
MGC798
−40
−50
−60
Fig.10 Second order Intermodulation distortion as
a function of collector current; typical values.
VCE =12V; V
o=316mV; f
(p+q) = 810 MHz.
1995 Sep 04 8
NXP Semiconductors Product specification
NPN 7 GHz wideband transistor BFG591
handbook, full pagewidth
MGC799
00o
0.2
0.6
0.4
0.8
1.0
1.0
45o
90o
135o
180o
45o
90o
135o
1
0.5
0
0.2
0.5
1
2
5
0.2 0.5 2
40 MHz
3 GHz
0.2
1 5
5
2
VCE =12V; I
C=70mA; Z
o=50
Fig.11 Common emitter input reflection coefficient (s11); typical values.
handbook, full pagewidth
MGC800
0o
90o
135o
180o
90o
50 40 30 20 10
45o
135o45o
40 MHz
3 GHz
VCE =12V; I
C=70mA.
Fig.12 Common emitter forward transmission coefficient (s21); typical values.
1995 Sep 04 9
NXP Semiconductors Product specification
NPN 7 GHz wideband transistor BFG591
handbook, full pagewidth
MGC801
0o
90o
135o
180o
90o
0.5 0.4 0.3 0.2 0.1
45o
135o45o
40 MHz
3 GHz
VCE =12V; I
C=70mA.
Fig.13 Common emitter reverse transmission coefficient (s12); typical values.
handbook, full pagewidth
MGC802
00o
0.2
0.6
0.4
0.8
1.0
1.0
45o
90o
135o
180o
45o
90o
135o
5
2
1
0.5
0.2
0
0.2
0.5
1
2
5
0.2 1 2 5
3 GHz
40 MHz
0.5
VCE =12V; I
C=70mA; Z
o=50
Fig.14 Common emitter output reflection coefficient (s22); typical values.
1995 Sep 04 10
NXP Semiconductors Product specification
NPN 7 GHz wideband transistor BFG591
SPICE parameters for the BFG591 crystal
Note
1. These parameter s have not been extrac ted, the
default values are shown.
SEQUENCE No. PARAMETER VALUE UNIT
1 IS 1.341 fA
2BF123.5
3NF.988m
4VAF75.85V
5 IKF 9.656 A
6 ISE 232.2 fA
7 NE 2.134
8 BR 10.22
9 NR 1.016
10 VAR 1.992 V
11 IKR 294.1 mA
12 ISC 211.0 aA
13 NC 997.2
14 RB 5.00
15 IRB 1.000 A
16 RBM 5.00
17 RE 1.275
18 RC 920.6 m
19 (1) XTB 0.000
20 (1) EG 1.110 EV
21 (1) XTI 3.000
22 CJE 3.821 pF
23 VJE 600.0 mV
24 MJE 348.5 m
25 TF 13.60 ps
26 XTF 71.73
27 VTF 10.28 V
28 ITF 1.929 A
29 PTF 0.000 deg
30 CJC 1.409 pF
31 VJC 219.4 mV
32 MJC 166.5 m
33 XCJ 2.340 m
34 TR 543.7 ns
35 (1) CJS 0.000 F
36 (1) VJS 750.0 mV
37 (1) MJS 0.000
38 FC 733.2 m
List of components (see Fig.15)
DESIGNATION VALUE UNIT
Cbe 182 fF
Ccb 16 fF
Cce 249 fF
L1 0.025 nH
L2 1.19 nH
L3 0.60 nH
LB1.50 nH
LE0.50 nH
QLB=50; QL
E= 50; QLB,E(f) = QLB,E(f/fc);
fc= scaling frequency = 1 GHz.
Fig.15 Package equivalent circuit SOT223.
handbook, halfpage
MBC964
B
E
CB' C'
E'
LB
LE
L3
L1 L2
Ccb
Cbe ce
C
1995 Sep 04 11
NXP Semiconductors Product specification
NPN 7 GHz wideband transistor BFG591
PACKAGE OUTLINE
UNIT A1bpcDEe1HELpQywv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 0.10
0.01
1.8
1.5 0.80
0.60
b1
3.1
2.9 0.32
0.22 6.7
6.3 3.7
3.3 2.3
e
4.6 7.3
6.7 1.1
0.7 0.95
0.85 0.1 0.10.2
DIMENSIONS (mm are the original dimensions)
SOT223 SC-73 04-11-10
06-03-16
wM
bp
D
b1
e1
e
A
A1
Lp
Q
detail X
HE
E
vMA
AB
B
c
y
0 2 4 mm
scale
A
X
132
4
Plastic surface-mounted package with increased heatsink; 4 leads SOT223
1995 Sep 04 12
NXP Semiconductors Product specification
NPN 7 GHz wideband transistor BFG591
DATA SHEET STATUS
Notes
1. Please consult the most rec ently issued document b efor e initiating or completing a design.
2. The product s tatus of device (s) described in this document may have changed si nce this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet D ev elopment This document contains data from the objective specification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the pr oduct specification.
DEFINITIONS
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provided in a Product data she et shall define the
specification of the product as agreed between NXP
Semiconductors and its custo m er, unless NXP
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product is deemed to offer functions and qualities beyond
those described in the Product data sheet.
DISCLAIMERS
Limited warranty and liability Information in this
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However, NXP Semiconduc tors does not give any
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Notwithstanding any damages that customer might incur
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reserves the right to make changes to information
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Applications Applications that are described herein for
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NXP Semiconductors makes no representation or
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associated with their ap plications and pr oducts.
1995 Sep 04 13
NXP Semiconductors Product specification
NPN 7 GHz wideband transistor BFG591
NXP Semiconductors does not accept any liability related
to any default, damage, cost s or problem which is based
on any weakness or default in the customer’s applications
or products, or the applic ation or use by customer’s third
party customer(s). Customer is responsible for doing all
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customer(s). NXP does not accept any liability in this
respect.
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ra tings only and
(proper) operat ion of the device at these or any other
conditions above those given in the Recommende d
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
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reliability of the device.
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Quick refer ence data The Quick reference data is an
extract of th e product data given in the Li miting values and
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All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimer s. No cha ng es were made to the technical content, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands R77/02/pp14 Date of release: 1995 Sep 04
