TIP142T NPN Epitaxial Silicon Darlington Transistor Features * * * * Monolithic Construction with Built-in Base-Emitter Shunt Resistors High DC Current Gain: hFE = 1000 at VCE = 4 V, IC = 5 A (Minimum) Industrial Use Complement to TIP147T Equivalent Circuit C B TO-220 1 1.Base 2.Collector 3.Emitter R1 R2 R1 8k R2 0.12k E Ordering Information Part Number Top Mark Package Packing Method TIP142T TIP142T TO-220 3L (Single Gauge) Bulk TIP142TTU TIP142T TO-220 3L (Single Gauge) Rail Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25C unless otherwise noted. Symbol Parameter Value Unit VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 10 A ICP Collector Current (Pulse) 15 A IB Base Current (DC) 0.5 A PC Collector Dissipation (TC = 25C) 80 W TJ Junction Temperature 150 C -65 to 150 C TSTG Storage Temperature Range (c) 2002 Fairchild Semiconductor Corporation TIP142T Rev. 1.1.0 www.fairchildsemi.com TIP142T -- NPN Epitaxial Silicon Darlington Transistor November 2014 Values are at TC = 25C unless otherwise noted. Symbol Parameter VCEO(sus) Collector-Emitter Sustaining Voltage IC = 30 mA, IB = 0 Conditions Min. Typ. Max. ICEO Collector Cut-Off Current VCE = 50 V, IB = 0 2 mA 100 Unit V ICBO Collector Cut-Off Current VCB = 100 V, IE = 0 1 mA IEBO Emitter Cut-Off Current VEB = 5 V, IC = 0 2 mA hFE DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage VCE = 4 V, IC = 5 A 1000 VCE = 4 V, IC = 10 A 500 IC = 5 A, IB = 10 mA 2 IC = 10 A, IB = 40 mA 3 V VBE(sat) Base-Emitter Saturation Voltage IC = 10 A, IB = 40 mA 3.5 V VBE(on) Base-Emitter On Voltage VCE = 4 V, IC = 10 A 3 V tD Delay Time tR Rise Time tSTG tF Storage Time Fall Time (c) 2002 Fairchild Semiconductor Corporation TIP142T Rev. 1.1.0 VCC = 30 V, IC = 5 A, IB1 = 20 mA, IB2 = -20 mA, RL = 6 0.15 s 0.55 s 2.50 s 2.50 s www.fairchildsemi.com 2 TIP142T -- NPN Epitaxial Silicon Darlington Transistor Electrical Characteristics 10 IB IB = 1800uA 8 IB = 1600uA 7 IB = 1400uA 100k IB = 800uA VCE = 4V IB = 600uA hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT A 200u 00uA IB = 1 = 10 IB = 2000uA 9 IB = 400uA 6 5 4 IB = 200uA 3 2 10k 1k 100 1 0 0 1 2 3 4 10 0.1 5 1 Figure 1. Static Characteristic VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 100 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 2. DC Current Gain 1000 10 f=0.1MHz Cob[pF], CAPACITANCE IC=500IB VBE(sat) 1 VCE(sat) 0.1 0.01 0.1 100 10 1 10 1 100 Figure 3. Collector-Emitter Saturation Voltage and Base-Emitter Saturation Voltage 100 1000 Figure 4. Collector Output Capacitance 100 PC[W], POWER DISSIPATION 100 10 DC IC[A], COLLECTOR CURRENT 10 VCB[V], COLLECTOR-BASE VOLTAGE IC[A], COLLECTOR CURRENT 1 TIP140T TIP141T 80 60 40 20 TIP142T 0 0.1 1 10 100 0 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 5. Safe Operating Area (c) 2002 Fairchild Semiconductor Corporation TIP142T Rev. 1.1.0 25 Figure 6. Power Derating www.fairchildsemi.com 3 TIP142T -- NPN Epitaxial Silicon Darlington Transistor Typical Performance Characteristics TIP142T -- NPN Epitaxial Silicon Darlington Transistor Physical Dimensions Figure 7. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB (c) 2002 Fairchild Semiconductor Corporation TIP142T Rev. 1.1.0 www.fairchildsemi.com 4 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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