TIP142T — NPN Epitaxial Silicon Darlington Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP142T Rev. 1.1.0
November 2014
TIP142T
NPN Epitaxial Silicon Darlington Transistor
Features
• Monolithic Construction with Built-in Base-Emitter Shunt Resistors
• High DC Current Gain: hFE = 1000 at VCE = 4 V, IC = 5 A (Minimum)
• Industrial Use
• Complement to TIP147T
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the re co mmen ded operating cond iti ons an d s tres si ng the parts to the se lev el s i s n ot re co mme nde d. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Part Number Top Mark Package Packing Method
TIP142T TIP142T TO-220 3L (Single Gauge) Bulk
TIP142TTU TIP142T TO-220 3L (Single Gauge) Rail
Symbol Parameter Value Unit
VCBO Collector-Base Voltage 100 V
VCEO Collector-Emitter Voltage 100 V
VEBO Emitter-Base Vo ltage 5 V
ICCollector Current (DC) 10 A
ICP Collector Current (Pulse) 15 A
IBBase Current (DC) 0.5 A
PCCollector Dissipation (TC = 25°C) 80 W
TJJunction Temperature 150 °C
TSTG Storage Temperature Range -65 to 150 °C
1.Base 2.Collector 3.Emitter
1TO-220
Equivalent Circuit
B
E
C
R1 R2
R1 8kΩ≅
R2 0.12kΩ≅
TIP142T — NPN Epitaxial Silicon Darlington Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP142T Rev. 1.1.0 2
Electrical Characteristics
Values ar e at TC = 25°C unless otherwise noted.
Symbol Parameter Conditions Min. Typ. Max. Unit
VCEO(sus) Collector-Emitter Sustaining Voltage IC = 30 mA, IB = 0 100 V
ICEO Collector Cut-Off Current VCE = 50 V, IB = 02mA
ICBO Collector Cut-Off Current VCB = 100 V, IE = 0 1 mA
IEBO Emitter Cut-Off Current VEB = 5 V, IC = 0 2 mA
hFE DC Current Gain VCE = 4 V, IC = 5 A 1000
VCE = 4 V, IC = 10 A 500
VCE(sat) Collector-Emitter Saturation Voltage IC = 5 A, IB = 10 mA 2 V
IC = 10 A, IB = 40 mA 3
VBE(sat) Base-Emitter Saturation Voltage IC = 10 A, IB = 40 mA 3.5 V
VBE(on) Base-Emitter On Voltage VCE = 4 V, IC = 10 A 3 V
tD Delay Time VCC = 30 V, IC = 5 A,
IB1 = 20 mA,
IB2 = -20 mA,
RL = 6 Ω
0.15 μs
tR Rise Time 0.55 μs
tSTG Storage Time 2.50 μs
tF Fall Time 2.50 μs
TIP142T — NPN Epitaxial Silicon Darlington Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP142T Rev. 1.1.0 3
Typical Performance Characteristics
Figure 1. Static Characteristic Figure 2. DC Current Gain
Figure 3. Collector-Emitter Saturation Voltage and
Base-Emitter Saturation Voltage Figure 4. Collector Output Capacitance
Figure 5. Safe Operating Area Figure 6. Power Derating
012345
0
1
2
3
4
5
6
7
8
9
10 IB = 2000u A
IB = 1800 uA
IB = 1600u A
IB = 1400uA
IB = 1200uA
I
B
= 1000uA
IB = 800uA
IB = 600uA
IB = 400uA
IB = 20 0uA
IC[A], COLLECTOR CURRENT
VCE[V ], C OLLE CTOR - EMITT ER VOLTA GE
0.1 1 10 100
10
100
1k
10k
100k
VCE = 4V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
0.1 1 10 100
0.01
0.1
1
10 IC=500IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
1 10 100 1000
10
100
1000 f=0.1MHz
VCB[V], COLLECTOR-BASE VOLTAGE
Cob[pF], CAPACITANCE
1 10 100 1000
0.1
1
10
100
TIP141T
TIP142T
TIP140T
DC
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
20
40
60
80
100
PC[W], P OWE R DIS S IPATIO N
TC[oC], CASE TEMPERATURE
TIP142T — NPN Epitaxial Silicon Darlington Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP142T Rev. 1.1.0 4
Physical Dimensions
Figure 7. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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Rev. I72
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