Schottky Barrier Diodes for
General Purpose Applications
Technical Data
Features
• Low Turn-On Voltage
As Low as 0.34 V at 1 mA
• Pico Second Switching Speed
• High Breakdown Voltage
Up to 70 V
• Matched Characteristics
Available
Description/Applications
The 1N5711, 1N5712, 5082-2800/
10/11 are passivated Schottky
barrier diodes which use a
patented “guard ring” design to
achieve a high breakdown
voltage. Packaged in a low cost
glass package, they are well suited
for high level detecting, mixing,
switching, gating, log or A-D
converting, video detecting,
frequency discriminating,
sampling, and wave shaping.
The 5082-2835 is a passivated
Schottky diode in a low cost glass
package. It is optimized for low
turn-on voltage. The 5082-2835 is
particularly well suited for the
UHF mixing needs of the CATV
marketplace.
The 5082-2300 Series and
5082-2900 devices are unpas-
sivated Schottky diodes in a glass
package. These diodes have
extremely low 1/f noise and are
ideal for low noise mixing, and
high sensitivity detecting. They
are particularly well suited for use
in Doppler or narrow band video
receivers.
1N5711
1N5712
5082-2300 Series
5082-2800 Series
5082-2900
0.41 (.016)
0.36 (.014)
25.4 (1.00)
MIN.
25.4 (1.00)
MIN.
1.93 (.076)
1.73 (.068)
CATHODE
DIMENSIONS IN MILLIMETERS AND (INCHES).
4.32 (.170)
3.81 (.150)
Outline 15
Maximum Ratings
Junction Operating and Storage Temperature Range
5082-2303, -2900.................................................................-60°C to +100°C
1N5711, 1N5712, 5082-2800/10/11 ....................................-65°C to +200°C
5082-2835............................................................................-60°C to +150°C
DC Power Dissipation
(Measured in an infinite heat sink at TCASE = 25
°
C)
Derate linearly to zero at maximum rated temperature
5082-2303, -2900.............................................................................. 100 mW
1N5711, 1N5712, 5082-2800/10/11 ................................................. 250 mW
5082-2835......................................................................................... 150 mW
Peak Inverse Voltage .................................................................................VBR
2
Package Characteristics Outline 15
Lead Material ........................................................................................ Dumet
Lead Finish..............................................................................95-5% Tin-Lead
Max. Soldering Temperature ................................................260°C for 5 sec
Min. Lead Strength ....................................................................4 pounds pull
Typical Package Inductance
1N5711, 1N5712: ................................................................................ 2.0 nH
2800 Series: ........................................................................................2.0 nH
2300 Series, 2900: ..............................................................................3.0 nH
Typical Package Capacitance
1N5711, 1N5712: ................................................................................ 0.2 pF
2800 Series: ........................................................................................ 0.2 pF
2300 Series, 2900: ............................................................................ 0.07 pF
The leads on the Outline 15 package should be restricted so that the
bend starts at least 1/16 inch from the glass body.
Outline 15 diodes are available on tape and reel. The tape and reel
specification is patterned after RS-296-D.
Electrical Specifications at TA = 25°C
General Purpose Diodes
Min. Max. VF = 1 V Max. Max. Max.
Breakdown Forward at Forward Reverse Leakage Capaci-
Part Package Voltage Voltage Current Current tance
Number Outline VBR (V) VF (mV) IF (mA) IR (nA) at VR (V) CT (pF)
5082-2800 15 70 410 15 200 50 2.0
1N5711 15 70 410 15 200 50 2.0
5082-2810 15 20 410 35 100 15 1.2
1N5712 15 20 550 35 150 16 1.2
5082-2811 15 15 410 20 100 8 1.2
5082-2835 15 8* 340 10* 100 1 1.0
Test IR = 10 µAI
F = 1 mA *VF = 0.45 V VR = 0 V
Conditions *IR = 100 µA f =1.0 MHz
Note: Effective Carrier Lifetime (τ) for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA except for 5082-2835
which is measured at 20 mA.
3
Low 1/f (Flicker) Noise Diodes
Min. Max. VF = 1 V Max. Max. Max.
Part Breakdown Forward at Forward Reverse Leakage Capaci-
Number Package Voltage Voltage Current Current tance
5082- Outline VBR (V) VF (mV) IF (mA) IR (nA) at VR (V) CT (pF)
2303 15 20 400 35 500 15 1.0
2900 15 10 400 20 100 5 1.2
Test IR = 10 µAI
F = 1 mA VR = 0 V
Conditions f =1.0 MHz
Note: Effective Carrier Lifetime (τ) for all these diodes is 100 ps maximum measured with Krakauer method at 20 mA.
Matched Pairs and Quads
Basic Matched Matched
Part Number Pair Quad Batch
5082- Unconnected Unconnected Matched[1] Test Conditions
2900 ∆VF at IF = 1.0, 10 mA
2800 5082-2804 5082-2805 ∆VF at IF = 0.5, 5 mA
∆VF = 20 mV ∆VF = 20 mV *IF = 10 mA
∆CO at f = 1.0 MHz
2811 5082-2826 ∆VF at IF = 10 mA
∆VF = 10 mV ∆CO at f = 1.0 MHz
∆CO = 0.1 pF
2835 5082-2080 ∆VF at IF =10 mA
∆VF = 10 mV ∆CO at f = 1.0 MHz
∆CO = 0.1 pF
Note:
1. Batch matched devices have a minimum batch size of 50 devices.
SPICE Parameters
Parameter Units 5082-2800 5082-2810 5082-2811 5082-2835 5082-2303 5082-2900
BVV 75 25 18 9 25 10
CJ0 pF 1.6 0.8 1.0 0.7 0.7 1.1
EGeV 0.69 0.69 0.69 0.69 0.69 0.69
IBV A 10E-5 10E-5 10E-5 10E-5 10E-5 10E-5
ISA 2.2 x 10E-9 1.1 x 10E-9 0.3 x 10E-8 2.2 x 10E-8 7 x 1.0E-9 10E-8
N 1.08 1.08 1.08 1.08 1.08 1.08
RSΩ25 10 10 5 10 15
PBV 0.6 0.6 0.6 0.56 0.64 0.64
PT222222
M 0.5 0.5 0.5 0.5 0.5 0.5
4
Typical Parameters
V
F
– FORWARD VOLTAGE (V)
Figure 1. I-V Curve Showing Typical
Temperature Variation for 5082-2300
Series and 5082-2900 Schottky Diodes.
100
10
1
0.1
0.01
I
F
- FORWARD CURRENT (mA)
0 0.10 0.20
0.30
0.40 0.50 0.60
100°C
50°C
25°C
0°C
–50°C
V
BR
(V)
Figure 2. 5082-2300 Series Typical
Reverse Current vs. Reverse Voltage
at Various Temperatures.
10.000
1,000
100
10
1
I
R
(nA)
0 5 10 15
100
75
50
25
T
A
= 25°C
I
F
- FORWARD CURRENT (mA)
Figure 3. 5082-2300 Series and 5082-2900
Typical Dynamic Resistance (R
D
) vs.
Forward Current (I
F
).
1000
100
10
R
D
- DYNAMIC RESISTANCE (Ω)
0.01 0 10 100
V
R
- REVERSE VOLTAGE (V)
Figure 4. 5082-2300 and 5082-2900
Typical Capacitance vs. Reverse
Voltage.
1.2
1.0
0.8
0.6
0.4
0.2
0
C
T
- CAPACITANCE (pF)
0 4 8 121620
5082-2900
5082-2303
V
F
- FORWARD VOLTAGE (V)
Figure 5. I-V Curve Showing Typical
Temperature Variation for 5082-2800
or 1N5711 Schottky Diodes.
50
10
5
1
0.5
0.1
0.05
0.01
I
F
- FORWARD CURRENT (mA)
0 0.2 0.4 0.6 0.8 1.0 1.2
–50°C
0°C
+25°C
+100°C
+150°C
+50°C
V
R
- REVERSE VOLTAGE (V)
Figure 6. (5082-2800 OR 1N5711)
Typical Variation of Reverse Current
(I
R
) vs. Reverse Voltage (V
R
) at
Various Temperatures.
100,000
10,000
1000
100
10
1
I
R
- REVERSE CURRENT (nA)
0 0.2 0.4 0.6 0.8 1.0 1.2
150
125
100
50
25
75
0
T
A
= °C
V
R
- REVERSE VOLTAGE (V)
Figure 7. (5082-2800 or 1N5711)
Typical Capacitance (C
T
) vs. Reverse
Voltage (V
R
).
12.0
1.5
1.0
0.5
0
C
T
- CAPACITANCE (pF)
01020304050
V
F
- FORWARD VOLTAGE (V)
Figure 8. I-V Curve Showing Typical
Temperature Variation for the 5082-
2810 or 1N5712 Schottky Diode.
100
10
1.0
0.1
0.01
I
F
- FORWARD CURRENT (mA)
0 0.40.2 0.6 0.8 1.0 1.2
–50°C
0°C
+25°C
+50°C
+100°C
+150°C
V
R
- REVERSE VOLTAGE (V)
Figure 9. (5082-2810 or IN5712)
Typical Variation of Reverse Current
(I
R
) vs. Reverse Voltage (V
R
) at
Various Temperatures.
10,000
1000
100
10
1.0
I
R
- REVERSE CURRENT (nA)
010515202530
150
125
100
75
50
25
T
A
= °C
5
Typical Parameters, continued
V
F
- FORWARD VOLTAGE (V)
Figure 10. I-V Curve Showing Typical
Temperature Variation for the 5082-2811
Schottky Diode.
100
10
1.0
0.1
0.01
I
F
- FORWARD CURRENT (mA)
0 0.40.2 0.6 0.8 1.0 1.2
–50°C
0°C
+25°C
+50°C
+100°C
+150°C
V
R
- REVERSE VOLTAGE (V)
Figure 11. (5082-2811) Typical Variation
of Reverse Current (I
R
) vs. Reverse
Voltage (V
R
) at Various Temperatures.
100,000
10,000
1000
100
10
1
I
R
- REVERSE CURRENT (nA)
0 5 10 15 20 25 30
150
100
50
25
T
A
= °C
V
F
- FORWARD VOLTAGE (V)
Figure 12. I-V Curve Showing Typical
Temperature Variations for 5082-2835
Schottky Diode.
100
10
1.0
0.1
0.01
I
F
- FORWARD CURRENT (mA)
0 0.2 0.4 0.6 0.8 1.0 1.2
+150°C
+100°C
+50°C
+25°C
0°C
–50°C
V
R
- REVERSE VOLTAGE (V)
Figure 13. (5082-2835) Typical Variation
of Reverse Current (I
R
) vs. Reverse
Voltage (V
R
) at Various Temperatures.
100,000
10,000
1000
100
10
1
I
R
- REVERSE CURRENT (nA)
01 23 4 5 6
+150°C
+125°C
+100°C
+75°C
+50°C
+25°C
V
R
- REVERSE VOLTAGE (V)
Figure 14. Typical Capacitance (C
T
) vs.
Reverse Voltage (V
R
).
11.4
1.2
1.0
0.8
0.6
0.4
0.2
0
C
T
- CAPACITANCE (pF)
0246810
5082-2810/2811
IN5712
5082-2835
I
F
- FORWARD CURRENT (mA)
Figure 15. Typical Dynamic Resistance
(R
D
) vs. Forward Current (I
F
).
1000
100
10
1
R
D
- DYNAMIC RESISTANCE (Ω)
0246810
5082-2800, 1N5711
5082-2811
5082-2811
1N5712
5082-2835
www.semiconductor.agilent.com
Data subject to change.
Copyright © 1999 Agilent Technologies
Obsoletes 5968-4304E
5968-7181E (11/99)
Diode Package Marking
1N5xxx 5082-xxxx
would be marked:
1Nx xx
xxx xx
YWW YWW
where xxxx are the last four digits of the 1Nxxxx or the 5082-xxxx part
number. Y is the last digit of the calendar year. WW is the work week of
manufacture.
Examples of diodes manufactured during workweek 45 of 1999:
1N5712 5082-3080
would be marked:
1N5 30
712 80
945 945
