CM1000DU-34NF Mega Power DualTM IGBTMOD Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 1000 Amperes/1700 Volts P (8 PLACES) U H A D G TC MEASURED POINTS (THE SIDE OF CU BASEPLATE) L H K C2E1 C C G E E G J F S C B T J E2 E Description: Powerex IGBTMODTM Modules are designed for use in switching two IGBT applications. Each module consists of a half-bridge configuration, with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. F C1 U V H G H H H H G R (9 PLACES) H L M LABEL G2 E2 C2 C2E1 E2 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches Millimeters A 5.91 150.0 L 1.36 +0.04/-0.02 34.6 +1.0/-0.5 B 5.10 129.5 M 0.0750.08 1.90.2 C 1.670.01 42.50.25 P 0.26 6.5 D 5.410.01 137.50.25 R M6 Metric M6 0.62 15.7 E 6.54 166.0 U F 2.910.01 74.00.25 V 0.71 18.0 G 1.65 42.0 W 0.75 19.0 H 0.55 14.0 X 0.43 11.0 Y 0.83 21.0 Z 0.41 10.5 AA 0.22 5.5 J 1.500.01 38.00.25 K 0.16 4.0 Housing Type (J.S.T. MFG. CO. LTD) S = VHR-2N T = VHR-5N 02/10 Rev. 1 Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode Isolated Baseplate for Easy Heat Sinking Applications: High Power UPS Large Motor Drives Utility Interface Inverters Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM1000DU-34NF is a 1700V (VCES), 1000 Ampere Dual IGBTMOD Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 1000 34 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM1000DU-34NF Mega Power DualTM IGBTMOD 1000 Amperes/1700 Volts Absolute Maximum Ratings, Tj = 25C unless otherwise specified Ratings Symbol CM1000DU-34NF Units Junction Temperature Tj -40 to 150 C Storage Temperature Tstg -40 to 125 C Collector-Emitter Voltage (G-E SHORT) VCES 1700 Volts Gate-Emitter Voltage (C-E SHORT) VGES 20 Volts IC 1000 Amperes ICM 2000* Amperes Collector Current DC (TC' = 104C)** Peak Collector Current (Tj 150C) Emitter Current (TC = 25C)*** IE 1000 Amperes Peak Emitter Current*** IEM 2000* Amperes Maximum Collector Dissipation (Tj < 150C) (TC = 25C) PC 3900 Watts Mounting Torque, M6 Mounting Screws - 40 in-lb Mounting Torque, M6 Main Terminal Screw - 40 in-lb Weight (Typical) - 1400 Grams Viso 3500 Volts Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Static Electrical Characteristics, Tj = 25C unless otherwise specified Characteristics Symbol Collector-Cutoff Current Gate Leakage Current ICES Min. Typ. Max. VCE = VCES, VGE = 0V Test Conditions - - 1 Units mA IGES VGE = VGES, VCE = 0V - - 5 Gate-Emitter Threshold Voltage VGE(th) IC = 100mA, VCE = 10V 5.5 7.0 8.5 Volts A Collector-Emitter Saturation Voltage VCE(sat) IC = 1000A, VGE = 15V, Tj = 25C - 2.2 2.8 Volts (Without Lead Resistance) (Chip) IC = 1000A, VGE = 15V, Tj = 125C - 2.45 - Volts Module Lead Resistance R(lead) IC = 1000A, Terminal-chip - Total Gate Charge QG VCC = 1000V, IC = 1000A, VGE = 15V - 0.286 - m - nC Emitter-Collector Voltage*** VEC IE = 1000A, VGE = 0V - 2.3 3 Volts Test Conditions Min. Typ. Max. - - 220 nF VCE = 10V, VGE = 0V - - 25 nF - - - - 6000 Dynamic Electrical Characteristics, Tj = 25C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Inductive Turn-on Delay Time td(on) VCC = 1000V, Load Rise Time tr IC = 1000A, IE = 1000A, - - 150 ns Switch Turn-off Delay Time td(off) VGE1 = VGE2 = 15V, - - 900 ns Times Fall Time Diode Reverse Recovery Time*** 600 nF ns tf RG = 0.47, - - 200 ns trr Inductive Load - - 450 ns 90 - C Diode Reverse Recovery Charge*** Qrr Switching Operation - * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. ** TC' measurement points is just under the chips. If this value is used, Rth(f-a) should be measured just under the chips. ***Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 4.7 Units http://store.iiic.cc/ 02/10 Rev. 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM1000DU-34NF Mega Power DualTM IGBTMOD 1000 Amperes/1700 Volts Thermal and Mechanical Characteristics, Tj = 25C unless otherwise specified Characteristics Symbol Test Conditions Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT 1/2 Module, TC Reference Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/2 Module, TC Reference Thermal Resistance, Junction to Case Rth(j-c')Q Per IGBT 1/2 Module, Thermal Resistance, Junction to Case Rth(j-c')D Per FWDi 1/2 Module, TC Reference Rth(c-f) Per 1/2 Module, Thermal Grease Applied Min. Typ. -- -- Max. 0.032 Units C/W -- -- 0.053 C/W - - 0.014 C/W - - 0.023 C/W - 0.016 - C/W Point per Outline Drawing Point per Outline Drawing TC Reference Point Under Chip TC Reference Point Under Chip Contact Thermal Resistance External Gate Resistance RG 0.47 OUTPUT CHARACTERISTICS (TYPICAL) 2000 Tj = 25C 15 1600 12 13 1200 11 800 400 10 0 2 4 6 8 1200 800 400 0 10 0 4 8 12 16 3 2 1 0 20 VGE = 15V Tj = 25C Tj = 125C 4 0 500 1000 1500 2000 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 104 103 8 6 IC = 2000A IC = 1000A 4 IC = 400A 2 0 4 8 12 16 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 02/10 Rev. 1 20 CAPACITANCE, Cies, Coes, Cres, (nF) EMITTER CURRENT, IE, (AMPERES) Tj = 25C 0 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 1600 9 8 0 5 VCE = 10V Tj = 25C Tj = 125C COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) VGE = 20V 4.7 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 2000 -- 103 Tj = 25C Tj = 125C 102 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 2500 VGE = 0V Cies 102 101 Coes Cres 100 10-1 10-1 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM1000DU-34NF Mega Power DualTM IGBTMOD 1000 Amperes/1700 Volts HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) td(off) td(on) tf 101 102 VCC = 1000V VGE = 15V RG = 0.47 Tj = 125C Inductive Load 103 trr 102 102 104 100 10-1 10-2 10-3 10-3 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 10-2 10-1 Per Unit Base Rth(j-c) = 0.014C/W (IGBT) Rth(j-c) = 0.023C/W (FWDi) Single Pulse TC = 25C 10-2 10-5 10-4 101 104 103 16 VCC = 800V VCC = 1000V 12 8 4 0 0 2000 10-3 10-3 Err 102 Eoff Eon 101 100 102 VCC = 1000V VGE = 15V Tj = 125C RG = 0.47 Inductive Load 103 COLLECTOR CURRENT, IC, (AMPERES) 4000 6000 8000 10000 GATE CHARGE, QG, (nC) SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) 103 101 10-1 TIME, (s) 4 100 VCC = 1000V VGE = 15V RG = 0.47 Tj = 125C Inductive Load IC = 1000A EMITTER CURRENT, IE, (AMPERES) SWITCHING LOSS, Eon, Eoff, Err, (mJ/PULSE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth * (NORMALIZED VALUE) COLLECTOR CURRENT, IC, (AMPERES) 102 Irr 104 103 SWITCHING LOSS, Eon, Eoff, Err, (mJ/PULSE) tr 102 103 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) REVERSE RECOVERY TIME, trr, (ns) SWITCHING TIME, (ns) 103 GATE CHARGE, VGE 103 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 104 104 Eon Eoff Err 102 VCC = 1000V VGE = 15V Tj = 125C IC = 1000A Inductive Load 101 0 1 2 3 4 5 GATE RESISTANCE, RG, () 02/10 Rev. 1