Mega Power Dual™
IGBTMOD
1000 Amperes/1700 Volts
CM1000DU-34NF
102/10 Rev. 1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
L 1.36 +0.04/-0.02 34.6 +1.0/-0.5
M 0.075±0.08 1.9±0.2
P 0.26 6.5
R M6 Metric M6
U 0.62 15.7
V 0.71 18.0
W 0.75 19.0
X 0.43 11.0
Y 0.83 21.0
Z 0.41 10.5
AA 0.22 5.5
Dimensions Inches Millimeters
A 5.91 150.0
B 5.10 129.5
C 1.67±0.01 42.5±0.25
D 5.41±0.01 137.5±0.25
E 6.54 166.0
F 2.91±0.01 74.0±0.25
G 1.65 42.0
H 0.55 14.0
J 1.50±0.01 38.0±0.25
K 0.16 4.0
Housing Type (J.S.T. MFG. CO. LTD)
S = VHR-2N
T = VHR-5N
A
D
P
(8 PLACES) L
TC MEASURED POINTS
(THE SIDE OF CU BASEPLATE)
L
M
H H HHH H
K
G
UH H
E
F
F
C2E1
E2 C1
G2
E2
G1
E2
C
C2E1
C
G E
E G
C1
E1
C2
LABEL
V
S
T
B
U
C
J
J
G G
R (9 PLACES)
Description:
Powerex IGBTMOD™ Modules are
designed for use in switching two
IGBT applications. Each
module consists of a half-bridge
configuration, with each transistor
having a reverse-connected
super-fast recovery free-wheel
diode. All components and inter-
connects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
£ Low Drive Power
£ Low VCE(sat)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ High Power UPS
£ Large Motor Drives
£ Utility Interface Inverters
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM1000DU-34NF
is a 1700V (VCES), 1000 Ampere
Dual IGBTMOD Power Module.
Current Rating VCES
Type Amperes Volts (x 50)
CM 1000 34
CM1000DU-34NF
Mega Power Dual™ IGBTMOD
1000 Amperes/1700 Volts
2 02/10 Rev. 1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
Absolute Maximum Ratings, Tj = 25°C unless otherwise specied
Ratings Symbol CM1000DU-34NF Units
Junction Temperature Tj -40 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Collector-Emitter Voltage (G-E SHORT) VCES 1700 Volts
Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts
Collector Current DC (TC' = 104°C)** IC 1000 Amperes
Peak Collector Current (Tj ≤ 150°C) ICM 2000* Amperes
Emitter Current (TC = 25°C)*** IE 1000 Amperes
Peak Emitter Current*** IEM 2000* Amperes
Maximum Collector Dissipation (Tj < 150°C) (TC = 25°C) PC 3900 Watts
Mounting Torque, M6 Mounting Screws – 40 in-lb
Mounting Torque, M6 Main Terminal Screw – 40 in-lb
Weight (Typical) – 1400 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 3500 Volts
Static Electrical Characteristics, Tj = 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1 mA
Gate Leakage Current IGES V
GE = VGES, VCE = 0V – – 5 µA
Gate-Emitter Threshold Voltage VGE(th) I
C = 100mA, VCE = 10V 5.5 7.0 8.5 Volts
Collector-Emitter Saturation Voltage VCE(sat) I
C = 1000A, VGE = 15V, Tj = 25°C – 2.2 2.8 Volts
(Without Lead Resistance) (Chip) IC = 1000A, VGE = 15V, Tj = 125°C – 2.45 – Volts
Module Lead Resistance R(lead) I
C = 1000A, Terminal-chip – 0.286 – mΩ
Total Gate Charge QG V
CC = 1000V, IC = 1000A, VGE = 15V – 6000 – nC
Emitter-Collector Voltage*** VEC I
E = 1000A, VGE = 0V – 2.3 3 Volts
Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance Cies – – 220 nF
Output Capacitance Coes V
CE = 10V, VGE = 0V – – 25 nF
Reverse Transfer Capacitance Cres – – 4.7 nF
Inductive Turn-on Delay Time td(on) V
CC = 1000V, – – 600 ns
Load Rise Time tr I
C = 1000A, IE = 1000A, – – 150 ns
Switch Turn-off Delay Time td(off) V
GE1 = VGE2 = 15V, – – 900 ns
Times Fall Time tf R
G = 0.47Ω, – – 200 ns
Diode Reverse Recovery Time*** trr Inductive Load – – 450 ns
Diode Reverse Recovery Charge*** Qrr Switching Operation – 90 – µC
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
** TC' measurement points is just under the chips. If this value is used, Rth(f-a) should be measured just under the chips.
***Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
http://store.iiic.cc/
CM1000DU-34NF
Mega Power Dual™ IGBTMOD
1000 Amperes/1700 Volts
302/10 Rev. 1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT 1/2 Module, TC Reference — — 0.032 °C/W
Point per Outline Drawing
Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/2 Module, TC Reference — — 0.053 °C/W
Point per Outline Drawing
Thermal Resistance, Junction to Case Rth(j-c')Q Per IGBT 1/2 Module, – – 0.014 °C/W
T
C Reference Point Under Chip
Thermal Resistance, Junction to Case Rth(j-c')D Per FWDi 1/2 Module, TC Reference – – 0.023 °C/W
T
C Reference Point Under Chip
Contact Thermal Resistance Rth(c-f) Per 1/2 Module, Thermal Grease Applied – 0.016 – °C/W
External Gate Resistance RG 0.47 — 4.7 Ω
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
CAPACITANCE, Cies, Coes, Cres, (nF)
CAPACITANCE VS. VCE
(TYPICAL)
100102
103
102
101
100
10-1
101
0.5 1. 5 1.0 3.0 3.52.0 2.5 4.0
102
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
103
104
EMITTER CURRENT, IE, (AMPERES)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
048121620
8
6
4
2
0
Tj = 25°C
COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
3
4
0500
2
1
025001500 20001000
VGE = 15V
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
VGE = 0V
Cies
Coes
Cres
IC = 400A
IC = 2000A
IC = 1000A
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
0246 810
VGE = 20V
10
11
12
15
13
9
8
Tj = 25°C
1200
400
0
800
1600
2000
COLLECTOR CURRENT, IC, (AMPERES)
1200
400
0
800
1600
2000
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
TRANSFER CHARACTERISTICS
(TYPICAL)
0812 16 20
VCE = 10V
Tj = 25°C
Tj = 125°C
4
10-1
CM1000DU-34NF
Mega Power Dual™ IGBTMOD
1000 Amperes/1700 Volts
4 02/10 Rev. 1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
GATE CHARGE, QG, (nC)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
20
0
16
12
8
4
0
COLLECTOR CURRENT, IC, (AMPERES)
104
102103
103
102
101
SWITCHING TIME, (ns)
2000 4000 1000080006000
VCC = 1000V
td(off)
td(on)
tr
Err
Eon
Eoff
VCC = 1000V
VGE = 15V
RG = 0.47Ω
Tj = 125°C
Inductive Load
tf
EMITTER CURRENT, IE, (AMPERES)
REVERSE RECOVERY TIME, trr, (ns)
104
102103
103
102
103
102
101
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
trr
Irr
VCC = 1000V
VGE = 15V
RG = 0.47Ω
Tj = 125°C
Inductive Load
VCC = 800V
IC = 1000A
104104
GATE RESISTANCE, RG, (Ω)
101
102
103
VCC = 1000V
VGE = 15V
Tj = 125°C
IC = 1000A
Inductive Load
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING LOSS, Eon, Eoff, Err, (mJ/PULSE)
102103104
100
102
101
103
VCC = 1000V
VGE = 15V
Tj = 125°C
RG = 0.47Ω
Inductive Load
TIME, (s)
10-5 10-4 10-3
10-1
10-2
10-3
10-3 10-2 10-1 100101
10-1
10-2
10-3
Zth = Rth • (NORMALIZED VALUE)
Per Unit Base
Rth(j-c) =
0.014°C/W
(IGBT)
Rth(j-c) =
0.023°C/W
(FWDi)
Single Pulse
TC = 25°C
032154
GATE CHARGE, VGE
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
SWITCHING LOSS, Eon, Eoff, Err, (mJ/PULSE)
SWITCHING LOSS VS. GATE RESISTANCE
(TYPICAL)
SWITCHING LOSS VS. COLLECTOR CURRENT
(TYPICAL)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
Err
Eon
Eoff
100
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)