MR2A16A FEATURES 256K x 16 MRAM Memory * Fast 35 ns Read/Write Cycle * SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign * Unlimited Read & Write Endurance * Data Non-volatile for >20-years at Temperature * One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in System for Simpler, More Efficient Design * Replace battery-backed SRAM solutions with MRAM to improve reliability * 3.3 Volt Power Supply * Automatic Data Protection on Power Loss * Commercial, Industrial, Extended Temperatures * RoHS-Compliant SRAM TSOP2 and BGA Packages - MSL Level 3 * AEC-Q100 Grade 1 option INTRODUCTION RoHS The MR2A16A is a 4,194,304-bit magnetoresistive random access memory (MRAM) device organized as 262,144 words of 16 bits. The MR2A16A offers SRAM compatible 35 ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by lowvoltage inhibit circuitry to prevent writes with voltage out of specification. The MR2A16A is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly. The MR2A16A is available in small footprint 400-mil, 44-lead plastic small-outline TSOP type-II package or 8 mm x 8 mm, 48-pin ball grid array (BGA) package with 0.75 mm ball centers. These packages are compatible with similar low-power SRAM products and other non-volatile RAM products. The MR2A16A provides highly reliable data storage over a wide range of temperatures. The product is offered with commercial (0 to +70 C), industrial (-40 to +85 C), extended (-40 to +105 C) and AEC-Q100 Grade 1 (-40 to +125 C) operating temperature range options. CONTENTS 1. DEVICE PIN ASSIGNMENT......................................................................... 2 2. ELECTRICAL SPECIFICATIONS................................................................. 4 3. TIMING SPECIFICATIONS.......................................................................... 7 4. ORDERING INFORMATION....................................................................... 12 5. MECHANICAL DRAWING.......................................................................... 13 6. REVISION HISTORY...................................................................................... 15 How to Reach Us.......................................................................................... 15 Everspin Technologies (c) 2011 1 MR2A16A Rev. 9, 12/2011 MR2A16A 1. DEVICE PIN ASSIGNMENT Figure 1.1 Block Diagram Table 1.1 Pin Functions Signal Name Function A Address Input E Chip Enable W Write Enable G Output Enable DQ Data I/O VDD Power Supply VSS Ground DC Do Not Connect NC No Connection Everspin Technologies (c) 2011 2 MR2A16A Rev. 9, 12/2011 MR2A16A DEVICE PIN ASSIGNMENT Figure 1.2 Pin Diagrams for Available Packages (Top View) A0 A1 A2 A3 A4 E DQL0 DQL1 DQL2 DQL3 VDD VSS DQL4 DQL5 DQL6 DQL7 W A5 A6 A7 A8 A9 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 A17 A16 A15 G UB LB DQU15 DQU14 DQU13 DQU12 VSS VDD DQU11 DQU10 DQU9 DQU8 DC A14 A13 A12 A11 A10 1 2 3 4 5 6 LB G A0 A1 A2 NC A DQU8 UB A3 A4 E DQL0 B DQU9 DQU10 A5 A6 DQL1 DQL2 C VSS DQU11 A17 A7 DQL3 VDD D VDD DQU12 NC A16 DQL4 VSS E DQU14 DQU13 A14 A15 DQL5 DQL6 F DQU15 NC A12 A13 W DQL7 G NC A8 A9 A10 A11 DC H 44-Pin TSOP Type2 48-Pin BGA Table 1.2 Operating Modes E1 G1 W1 LB1 UB1 Mode VDD Current DQL[7:0]2 DQU[15:8]2 H X X X X Not selected ISB1, ISB2 Hi-Z Hi-Z L H H X X Output disabled IDDR Hi-Z Hi-Z L X X H H Output disabled IDDR Hi-Z Hi-Z L L H L H Lower Byte Read IDDR DOut Hi-Z L L H H L Upper Byte Read IDDR Hi-Z DOut L L H L L Word Read IDDR DOut DOut L X L L H Lower Byte Write IDDW Din Hi-Z L X L H L Upper Byte Write IDDW Hi-Z Din L X L L L Word Write IDDW Din Din H = high, L = low, X = don't care 1 Hi-Z = high impedance 2 Everspin Technologies (c) 2011 3 MR2A16A Rev. 9, 12/2011 MR2A16A 2. ELECTRICAL SPECIFICATIONS Absolute Maximum Ratings This device contains circuitry to protect the inputs against damage caused by high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage greater than maximum rated voltages to these high-impedance (Hi-Z) circuits. The device also contains protection against external magnetic fields. Precautions should be taken to avoid application of any magnetic field more intense than the maximum field intensity specified in the maximum ratings. Table 2.1 Absolute Maximum Ratings1 Parameter Symbol Value Unit Supply voltage2 VDD -0.5 to 4.0 V Voltage on any pin2 VIN -0.5 to VDD + 0.5 V Output current per pin IOUT 20 mA Package power dissipation3 PD 0.600 W TBIAS -10 to 85 -45 to 95 -45 to 110 -45 to 130 C Storage Temperature Tstg -55 to 150 C Lead temperature during solder (3 minute max) TLead 260 C Maximum magnetic field during write MR2A16A (All Temperatures) Hmax_write 2000 A/m Maximum magnetic field during read or standby Hmax_read 8000 A/m Temperature under bias MR2A16A (Commercial) MR2A16AC (Industrial) MR2A16AV (Extended) MR2A16AM (AEC-Q100 Grade 1) 1 Permanent device damage may occur if absolute maximum ratings are exceeded. Functional operation should be restricted to recommended operating conditions. Exposure to excessive voltages or magnetic fields could affect device reliability. 2 All voltages are referenced to VSS. 3 Power dissipation capability depends on package characteristics and use environment. Everspin Technologies (c) 2011 4 MR2A16A Rev. 9, 12/2011 MR2A16A Electrical Specifications Table 2.2 Operating Conditions Parameter Symbol Min Typical Max Unit Power supply voltage 1 VDD 3.0 3.3 3.6 V Write inhibit voltage VWI 2.5 2.7 3.0 1 V Input high voltage VIH 2.2 - VDD + 0.3 2 V Input low voltage VIL -0.5 3 - 0.8 V TA 0 -40 -40 -40 Temperature under bias MR2A16A (Commercial) MR2A16AC (Industrial) MR2A16AV (Extended) MR2A16AM (AEC-Q100 Grade 1) 4 70 85 105 125 C There is a 2 ms startup time once VDD exceeds VDD,(max). See Power Up and Power Down Sequencing below. VIH(max) = VDD + 0.3 VDC ; VIH(max) = VDD + 2.0 VAC (pulse width 10 ns) for I 20.0 mA. 3 VIL(min) = -0.5 VDC ; VIL(min) = -2.0 VAC (pulse width 10 ns) for I 20.0 mA. 4 AEC-Q100 Grade 1 temperature profile assumes 10% duty cycle at maximum temperature (2 years out of 20 years life.) 1 2 Power Up and Power Down Sequencing The MRAM is protected from write operations whenever VDD is less than VWI. As soon as VDD exceeds VDD(min), there is a startup time of 2 ms before read or write operations can start. This time allows memory power supplies to stabilize. The E and W control signals should track VDD on power up to VDD- 0.2 V or VIH (whichever is lower) and remain high for the startup time. In most systems, this means that these signals should be pulled up with a resistor so that signal remains high if the driving signal is Hi-Z during power up. Any logic that drives E and W should hold the signals high with a power-on reset signal for longer than the startup time. During power loss or brownout where VDD goes below VWI, writes are protected and a startup time must be observed when power returns above VDD(min). Figure 2.1 Power Up and Power Down Diagram STARTUP TIME STARTUP TIME VDD VDD VWI VWI BROWNOUT OR POWER LOSS WRITES INHIBITED E W NORMAL OPERATION Everspin Technologies (c) 2011 NORMAL OPERATION 5 MR2A16A Rev. 9, 12/2011 MR2A16A Electrical Specifications Table 2.3 DC Characteristics Parameter Symbol Min Typical Max Unit Input leakage current Ilkg(I) - - 1 A Output leakage current Ilkg(O) - - 1 A Output low voltage (IOL = +4 mA) (IOL = +100 A) VOL - - 0.4 VSS + 0.2 V Output high voltage (IOH = -4 mA) (IOH = -100 A) VOH 2.4 VDD - 0.2 - - V Table 2.4 Power Supply Characteristics Parameter Symbol Typical Max Unit AC active supply current - read modes1 (IOUT= 0 mA, VDD= max) IDDR 55 80 mA IDDW 105 105 105 105 155 165 165 165 mA AC standby current (VDD= max, E = VIH) no other restrictions on other inputs ISB1 18 28 mA CMOS standby current (E VDD - 0.2 V and VIn VSS + 0.2 V or VDD - 0.2 V) (VDD = max, f = 0 MHz) ISB2 9 12 mA AC active supply current - write modes1 (VDD= max) Commercial Grade Industrial Grade Extended Grade AEC-Q100 Grade 1 All active current measurements are measured with one address transition per cycle and at minimum cycle time. Everspin Technologies (c) 2011 6 MR2A16A Rev. 9, 12/2011 MR2A16A 3. TIMING SPECIFICATIONS Table 3.1 Capacitance1 1 Parameter Symbol Typical Max Unit Address input capacitance CIn - 6 pF Control input capacitance CIn - 6 pF Input/Output capacitance CI/O - 8 pF Parameter Value Unit Logic input timing measurement reference level 1.5 V Logic output timing measurement reference level 1.5 V Logic input pulse levels 0 or 3.0 V Input rise/fall time 2 ns Output load for low and high impedance parameters See Figure 3.1 Output load for all other timing parameters See Figure 3.2 f = 1.0 MHz, dV = 3.0 V, TA = 25 C, periodically sampled rather than 100% tested. Table 3.2 AC Measurement Conditions Figure 3.1 Output Load Test Low and High ZD= 50 Output RL = 50 VL = 1.5 V Figure 3.2 Output Load Test All Others 3.3 V 590 Output 5 pF 435 Everspin Technologies (c) 2011 7 MR2A16A Rev. 9, 12/2011 MR2A16A Timing Specifications Read Mode Table 3.3 Read Cycle Timing1 Parameter Symbol Min Max Unit Read cycle time tAVAV 35 - ns Address access time tAVQV - 35 ns Enable access time2 tELQV - 35 ns Output enable access time tGLQV - 15 ns Byte enable access time tBLQV - 15 ns Output hold from address change tAXQX 3 - ns tELQX 3 - ns tGLQX 0 - ns Byte enable low to output active3 tBLQX 0 - ns Enable high to output Hi-Z tEHQZ 0 15 ns Output enable high to output Hi-Z3 tGHQZ 0 10 ns Byte high to output Hi-Z tBHQZ 0 10 ns Enable low to output active3 Output enable low to output active 1 2 3 3 3 3 W is high for read cycle. Power supplies must be properly grounded and decoupled, and bus contention conditions must be minimized or eliminated during read or write cycles. Addresses valid before or at the same time E goes low. This parameter is sampled and not 100% tested. Transition is measured 200 mV from the steady-state voltage. Figure 3.3A Read Cycle 1 Figure 3.3B Read Cycle 2 Everspin Technologies (c) 2011 8 MR2A16A Rev. 9, 12/2011 MR2A16A Timing Specifications Table 3.4 Write Cycle Timing 1 (W Controlled)1 Parameter Symbol Min Max Unit Write cycle time2 tAVAV 35 - ns Address set-up time tAVWL 0 - ns Address valid to end of write (G high) tAVWH 18 - ns Address valid to end of write (G low) tAVWH 20 - ns 15 - ns 15 - ns tWLWH tWLEH tWLWH tWLEH Write pulse width (G high) Write pulse width (G low) Data valid to end of write tDVWH 10 - ns Data hold time tWHDX 0 - ns tWLQZ 0 12 ns tWHQX 3 - ns tWHAX 12 - ns Write low to data Hi-Z3 Write high to output active 3 Write recovery time 1 2 3 All write occurs during the overlap of E low and W low. Power supplies must be properly grounded and decoupled and bus contention conditions must be minimized or eliminated during read and write cycles. If G goes low at the same time or after W goes low, the output will remain in a high impedance state. After W, E or UB/LB has been brought high, the signal must remain in steady-state high for a minimum of 2 ns. The minimum time between E being asserted low in one cycle to E being asserted low in a subsequent cycle is the same as the minimum cycle time allowed for the device. All write cycle timings are referenced from the last valid address to the first transition address. This parameter is sampled and not 100% tested. Transition is measured 200 mV from the steady-state voltage. At any given voltage or temperate, tWLQZ(max) < tWHQX(min) Figure 3.4 Write Cycle Timing 1 (W Controlled) Everspin Technologies (c) 2011 9 MR2A16A Rev. 9, 12/2011 MR2A16A Timing Specifications Table 3.5 Write Cycle Timing 2 (E Controlled)1 1 2 3 Parameter Symbol Min Max Unit Write cycle time2 tAVAV 35 - ns Address set-up time tAVEL 0 - ns Address valid to end of write (G high) tAVEH 18 - ns Address valid to end of write (G low) tAVEH 20 - ns Enable to end of write (G high) tELEH tELWH 15 - ns Enable to end of write (G low)3 tELEH tELWH 15 - ns Data valid to end of write tDVEH 10 - ns Data hold time tEHDX 0 - ns Write recovery time tEHAX 12 - ns All write occurs during the overlap of E low and W low. Power supplies must be properly grounded and decoupled and bus contention conditions must be minimized or eliminated during read and write cycles. If G goes low at the same time or after W goes low, the output will remain in a high impedance state. After W, E or UB/LB has been brought high, the signal must remain in steady-state high for a minimum of 2 ns. The minimum time between E being asserted low in one cycle to E being asserted low in a subsequent cycle is the same as the minimum cycle time allowed for the device. All write cycle timings are referenced from the last valid address to the first transition address. If E goes low at the same time or after W goes low, the output will remain in a high-impedance state. If E goes high at the same time or before W goes high, the output will remain in a high-impedance state. Figure 3.5 Write Cycle Timing 2 (E Controlled)1 Everspin Technologies (c) 2011 10 MR2A16A Rev. 9, 12/2011 MR2A16A Timing Specifications Table 3.6 Write Cycle Timing 3 (LB/UB Controlled)1 Parameter Symbol Min Max Unit Write cycle time2 tAVAV 35 - ns Address set-up time tAVBL 0 - ns Address valid to end of write (G high) tAVBH 18 - ns Address valid to end of write (G low) tAVBH 20 - ns 15 - ns 15 - ns tBLEH tBLWH tBLEH tBLWH Write pulse width (G high) Write pulse width (G low) 1 2 Data valid to end of write tDVBH 10 - ns Data hold time tBHDX 0 - ns Write recovery time tBHAX 12 - ns All write occurs during the overlap of E low and W low. Power supplies must be properly grounded and decoupled and bus contention conditions must be minimized or eliminated during read and write cycles. If G goes low at the same time or after W goes low, the output will remain in a high impedance state. After W, E or UB/LB has been brought high, the signal must remain in steady-state high for a minimum of 2 ns. If both byte control signals are asserted, the two signals must have no more than 2 ns skew between them. The minimum time between E being asserted low in one cycle to E being asserted low in a subsequent cycle is the same as the minimum cycle time allowed for the device. All write cycle timings are referenced from the last valid address to the first transition address. Table 3.6 Write Cycle Timing 3 (UB/LB Controlled) Everspin Technologies (c) 2011 11 MR2A16A Rev. 9, 12/2011 MR2A16A 4. ORDERING INFORMATION Figure 4.1 Part Numbering System MR 2 A 16 A V YS 35 R Carrier Blank = Tray, R = Tape & Reel Speed 35 ns Package (YS = TSOPII, MA = FBGA) Temperature Range Blank = Commercial 0 to + 70 C C = Industrial -40 to + 85C V = Extended -40 to +105 C M = AEC-Q100 Grade 1 -40 to +125 C Data Width 08 = 8-Bit, 16 = 16-bit Type Density A = Asynchronous, S = Synchronous (56 = 256 Kb, 0 = 1Mb, 1 =2Mb, 2 =4Mb, 4 =16Mb Magnetoresistive RAM (MR) Table 4.1 Available Parts Part Number Description - Operating Temperature Grade Package Ship Pack Temp Range MR2A16AYS35 3.3v 256Kx16 MRAM Commercial 44-TSOP2 Tray 0 to +70 C MR2A16ACYS35 3.3v 256Kx16 MRAM Industrial 44-TSOP2 Tray -40 to +85 C MR2A16AVYS35 3.3v 256Kx16 MRAM Extended 44-TSOP2 Tray -40 to +105 C MR2A16AMYS351 3.3v 256Kx16 MRAM AEC-Q100 Grade 1 44-TSOP2 Tray -40 to +125 C MR2A16AYS35R 3.3v 256Kx16 MRAM Commercial 44-TSOP2 Tape & Reel 0 to +70 C MR2A16ACYS35R 3.3v 256Kx16 MRAM Industrial 44-TSOP2 Tape & Reel -40 to +85 C MR2A16AVYS35R 3.3v 256Kx16 MRAM Extended 44-TSOP2 Tape & Reel -40 to +105 C MR2A16AMYS35R1 3.3v 256Kx16 MRAM AEC-Q100 Grade 1 44-TSOP2 Tape & Reel -40 to +125 C MR2A16AMA35 3.3v 256Kx16 MRAM Commercial 48-BGA Tray 0 to +70 C MR2A16ACMA35 3.3v 256Kx16 MRAM Industrial 48-BGA Tray -40 to +85 C MR2A16AVMA35 3.3v 256Kx16 MRAM Extended 48-BGA Tray -40 to +105 C MR2A16AMA35R 3.3v 256Kx16 MRAM Commercial 48-BGA Tape & Reel 0 to +70 C MR2A16ACMA35R 3.3v 256Kx16 MRAM Industrial 48-BGA Tape & Reel -40 to +85 C MR2A16AVMA35R 3.3v 256Kx16 MRAM Extended 48-BGA Tape & Reel -40 to +105 C 1 Preliminary Products: These products are classified as Preliminary until the completion of all qualification tests. The specifications in this data sheet are intended to be final but are subject to change. Please check the Everspin web site www.everspin.com for the latest information on product status. Everspin Technologies (c) 2011 12 MR2A16A Rev. 9, 12/2011 MR2A16A 5. MECHANICAL DRAWING Figure 5.1 44-TSOP2 1. 2. 3. 4. Print Version Not To Scale Dimensions and tolerances per ASME Y14.5M - 1994. Dimensions in Millimeters. Dimensions do not include mold protrusion. Dimension does not include DAM bar protrusions. DAM Bar protrusion shall not cause the lead width to exceed 0.58. Everspin Technologies (c) 2011 13 MR2A16A Rev. 9, 12/2011 MR2A16A Mechanical Drawings Figure 5.2 48-FBGA TOP VIEW SIDE VIEW BOTTOM VIEW 1. 2. 3. 4. 5. Print Version Not To Scale Dimensions in Millimeters. Dimensions and tolerances per ASME Y14.5M - 1994. Maximum solder ball diameter measured parallel to DATUM A DATUM A, the seating plane is determined by the spherical crowns of the solder balls. Parallelism measurement shall exclude any effect of mark on top surface of package. Everspin Technologies (c) 2011 14 MR2A16A Rev. 9, 12/2011 MR2A16A 6. REVISION HISTORY Revision Date Description of Change 5 Sept 21, 2007 Changed MR2A16ATS35C product description to Legacy Commercial. Added the New Commerical temperature product (MR2A16AYS35) information. Table 3: MR2A16AYS35 Hmaxwrite=25 Oe. Table 4: MR2A16AYS35 has a 2 ms power up waiting period. Table 6: Applied values to TBD's in IDD specifications. 6 Nov 12, 2007 Table 2: Changed IDDA to IDDR or IDDW. Table 13: Added noteindicating that TS and YS are both valid package codes. Current Part Numbering System: Added commercial (missing letter) temperature range. 7 Sep 12, 2008 Reformat Datasheet for EverSpin, Add BGA Packaging Information, Add Tape & Reel Part Numbers, Add Power Sequencing Info, Correct IOH spec of VOH to -100 uA, Correct ac Test Conditions. 8 July 22, 2009 Add TSOP2 Lead Cross-Section, Add Production Note. Converted to new document format. 9 Dec 16, 2011 Added AEC-Q100 Grade 1 product option for TSOP2 package to Table 4.1. Revised Tables 2.1, 2.2 and 4.1 to include AEC-Q100 Grade 1 specifications. New logo design. How to Reach Us: Home Page: www.everspin.com E-Mail: support@everspin.com orders@everspin.com sales@everspin.com USA/Canada/South and Central America Everspin Technologies 1347 N. Alma School Road, Suite 220 Chandler, Arizona 85224 +1-877-347-MRAM (6726) +1-480-347-1111 Europe, Middle East and Africa support.europe@everspin.com Japan support.japan@everspin.com Asia Pacific support.asia@everspin.com Information in this document is provided solely to enable system and software implementers to use Everspin Technologies products. There are no express or implied licenses granted hereunder to design or fabricate any integrated circuit or circuits based on the information in this document. Everspin Technologies reserves the right to make changes without further notice to any products herein. Everspin makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Everspin Technologies assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters, which may be provided in Everspin Technologies data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters including "Typicals" must be validated for each customer application by customer's technical experts. Everspin Technologies does not convey any license under its patent rights nor the rights of others. Everspin Technologies products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Everspin Technologies product could create a situation where personal injury or death may occur. Should Buyer purchase or use Everspin Technologies products for any such unintended or unauthorized application, Buyer shall indemnify and hold Everspin Technologies and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Everspin Technologies was negligent regarding the design or manufacture of the part. EverspinTM and the Everspin logo are trademarks of Everspin Technologies, Inc. All other product or service names are the property of their respective owners. (c)Everspin Technologies, Inc. 2011 Filename: MR2A16A_Datasheet_EST193_Rev9.pdf Everspin Technologies (c) 2011 15 MR2A16A Rev. 9, 12/2011